Abstract: A semiconductor dry etching process that provides deep, smooth (RMS of less than approximately 5 nm), and vertical etching of InP-based materials with ICP RIE using a chlorinated plasma with the addition of hydrogen gas. Inert gases such as nitrogen, argon, or both may also be included. To produce relatively high anisotropy with exceptionally smooth surfaces, the amount of hydrogen gas added preferably exceeds the volumetric measure of chlorinated gas in standard cubic centimeter per minute (sccm); at a ratio of greater than 1:1. The present invention provides an improved dry etching process for InP-based semiconductor materials that yields deep, vertical etch profiles with improved surface smoothness (i.e., morphology) and high manufacturing etch rates.

Abstract: A semiconductor dry etching process that provides deep, smooth, and vertical etching of InP-based materials using a chlorinated plasma with the addition of nitrogen (N2) gas. Etching of InP-based semiconductors using an appropriate Cl2/N2 mixture without any additional gases provides improved surface morphology, anisotropy and etch rates.