Patents by Inventor Thomas E. Shatz

Thomas E. Shatz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7672094
    Abstract: A tunnel junction TMR magnetoresistive sensor formed on layers having nitrogen interspersed therein. The nitrogenation of the layers on which the sensor is deposited allows the sensor layers to have very smooth, uniform surfaces. This greatly improves sensor performance by, for example, providing a very uniform barrier layer thickness.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: March 2, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Thomas E. Shatz, Dulip Ajantha Welipitiya, Brian R. York
  • Patent number: 7573685
    Abstract: A magnetoresistive sensor having a Ta cap layer with nitrogen added in situ during deposition. The nitrogen in the cap layer can be formed by depositing a Ta cap layer in a sputter deposition chamber having a small amount of nitrogen in an Ar atmosphere. The resulting nitrogenated cap layer exhibits reduced specular scattering, which results in improved magnetic performance of the magnetoresistive sensor.
    Type: Grant
    Filed: June 27, 2007
    Date of Patent: August 11, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Wen-yaung Lee, Thomas E. Shatz, Dulip Ajantha Welipitiya, Brian R. York
  • Publication number: 20080266725
    Abstract: A tunnel junction TMR magnetoresistive sensor formed on layers having nitrogen interspersed therein. The nitrogenation of the layers on which the sensor is deposited allows the sensor layers to have very smooth, uniform surfaces. This greatly improves sensor performance by, for example, providing a very uniform barrier layer thickness.
    Type: Application
    Filed: May 23, 2008
    Publication date: October 30, 2008
    Inventors: Thomas E. Shatz, Dulip Ajantha Welipitiya, Brian R. York
  • Patent number: 7333302
    Abstract: A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated). The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than on monolayer. The amount of nitrogen deposited on top of the alumina substrate is not enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface.
    Type: Grant
    Filed: June 27, 2007
    Date of Patent: February 19, 2008
    Assignee: Hitachi Global Storage Technology Netherlands B.V.
    Inventors: Wen-yaung Lee, Thomas E. Shatz, Dulip Ajantha Welipitiya, Brian R. York
  • Patent number: 7251110
    Abstract: A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated) and having a Ta cap layer with nitrogen added in situ during deposition. The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than on monolayer. The amount of nitrogen deposited on top of the alumina substrate is riot enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface. The nitrogen in the cap layer can be formed by depositing a Ta cap layer in a sputter deposition chamber having a small amount of nitrogen in an Ar atmosphere.
    Type: Grant
    Filed: January 18, 2005
    Date of Patent: July 31, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Wen-yaung Lee, Thomas E. Shatz, Dulip Ajantha Welipitiya, Brian R. York