Abstract: A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.

Abstract: A vehicle door arrangement having a vehicle door for closing a door opening in a bodywork of a vehicle, in particular a motor vehicle, and having a pivoting device, which comprises a carrier arm bearing the weight of the vehicle door and at least one guide arm controlling the movement of the vehicle door, wherein the carrier arm and the guide arm are of the same length and are arranged pivotally mounted on the vehicle door and the bodywork in such a way that the arms form a parallelogram. The support arm is pivotally mounted level with a horizontal bodywork section defining a lower limit of the door opening.

Abstract: A vehicle door arrangement having a vehicle door for closing a door opening in a bodywork of a vehicle, in particular a motor vehicle, and having a pivoting device, which comprises a carrier arm bearing the weight of the vehicle door and at least one guide arm controlling the movement of the vehicle door, wherein the carrier arm and the guide arm are of the same length and are arranged pivotally mounted on the vehicle door and the bodywork in such a way that the arms form a parallelogram. The support arm is pivotally mounted level with a horizontal bodywork section defining a lower limit of the door opening.