Abstract: A packaged electronic system comprises a slab (210) of low-grade silicon (l-g-Si) configured as ridges (114) framing a depression of depth (112) including a recessed central area suitable to accommodate semiconductor chips and embedded electrical components, the depth at least equal to the thickness of the chips and the components, the ridge covered by system terminals (209b) connected to attachment pads in the central area; and semiconductor chips (120, 130) having a thickness and terminals on at least one of opposing chip sides, the chips terminals attached to the central area terminals so that the opposite chip side is coplanar with the system terminals on the slab ridge.

Abstract: A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331). The flat side (335) of the slab includes a heavily n-doped region (314) forming a pn-junction (315) with the p-type bulk. A metal-filled deep silicon via (350) through the p-type ridge (331) connects the n-region with the terminal (322) on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.

Abstract: A trench MOSFET device includes a semiconductor layer of a first doping type. MOS transistor cells are in a body region of a second doping type in the semiconductor layer. The transistor cells include a first cell type including a first trench providing a first gate electrode or the first gate electrode is on the semiconductor surface between the first trench and a second trench, and a first source region is formed in the body region. The first gate electrode is electrically isolated from the first source region. A second cell type has a third trench providing a second gate electrode or the second gate electrode is on the semiconductor surface between the third trench and a fourth trench, and a second source region is in the body region. An electrically conductive member directly connects the second gate electrode, first source region and second source region together.

Abstract: An electronic system comprises a first chip (101) of single-crystalline semiconductor including a first electronic device embedded in a second chip (102) of single-crystalline semiconductor shaped as a container having a slab (104) bordered by ridges (103), and including a second electronic device. The nested chips are assembled in a container of low-grade silicon shaped as a slab 130 bordered by retaining walls 131 and including conductive traces and terminals. The first electronic device is connected to the second electronic device by attaching the first chip onto the slab of the second chip; and the first and second electronic devices are connected to the container by embedding the second chip in the container, wherein the nested first and second chips operate as an electronic system and the container operates as the package of the system. For first and second devices as field effect transistors, the system is a power block.

Abstract: A trench MOSFET device includes a semiconductor layer of a first doping type. MOS transistor cells are in a body region of a second doping type in the semiconductor layer. The transistor cells include a first cell type including a first trench providing a first gate electrode or the first gate electrode is on the semiconductor surface between the first trench and a second trench, and a first source region is formed in the body region. The first gate electrode is electrically isolated from the first source region. A second cell type has a third trench providing a second gate electrode or the second gate electrode is on the semiconductor surface between the third trench and a fourth trench, and a second source region is in the body region. An electrically conductive member directly connects the second gate electrode, first source region and second source region together.

Abstract: In a process for forming an MOS-gated device having self-aligned trenches, a screen oxide layer and then a nitride layer are formed on an upper layer of a semiconductor substrate. The nitride layer is patterned and etched to define a well region in the upper layer, and ions of a first conductivity type are diffused into the masked upper layer to form the well region. Ions of a second, opposite conductivity type are implanted into the well region to form a source region extending to a selected depth that defines a source-well junction. After removal of the well mask to expose the previously masked portion of the nitride layer, an oxide insulating layer providing a hard mask is formed overlying the well and source regions. The remaining previously masked portions of the nitride layer and underlying screen oxide layer are removed to expose the portion of the substrate not masked by the oxide insulating layer.

Abstract: A process for forming a vertical semiconductor device having increased source contact area comprises forming a gate and a well region in a silicon substrate. Using dopant of a second conductivity type, a shallow source region is formed in the well region, and a first oxide layer is deposited over the gate and the source and well regions. The first oxide layer of oxide is etched to form a first oxide on the substrate adjacent the gate, a thin nitride layer is deposited over the gate and source regions, and a second oxide layer is deposited over the nitride layer and etched to form a second oxide spacer separated from the first oxide spacer and substrate by the nitride layer. These spacers are used as a mask to selectively remove the thin nitride layer from the gate and substrate and portions of the gate polysilicon and source region and thereby form in the source region a recessed portion comprising vertical and horizontal surfaces.

Abstract: A semiconductor device includes a source region and a gate disposed at the upper surface of a silicon substrate, which includes a drain region for the device. On the lower surface of the substrate is disposed a backmetal drain terminal comprising a stack that includes a first layer of tantalum and an outermost second layer of copper.

Abstract: In a semiconductor device, a trench is etched into a surface of a semiconductor body comprising, from the surface down, a highly doped first (source) region; a moderately doped second (body) region; and a lightly doped third (drain) region. The trench walls are then oxidized. For reducing the effects of etching rate and oxide growing rate variations which occur at the junctions between regions of differing concentrations, the trench is first formed by etching and the trench walls then oxidized prior to the formation of the first region. Trenches having straighter walls and more uniformly thick oxides are thus formed.