Patents by Inventor Thomas F. Houghton
Thomas F. Houghton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11810870Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a moisture seal for photonic devices and methods of manufacture. The structure includes: a first trench in at least one substrate material; a guard ring structure with an opening and which at least partially surrounds the first trench; and a second trench at a dicing edge of the substrate, the second trench being lined on sidewalls with barrier material and spacer material over the barrier material.Type: GrantFiled: December 23, 2022Date of Patent: November 7, 2023Assignee: GLOBALFOUNDRIES U.S. INC.Inventors: Asli Sahin, Thomas F. Houghton, Jennifer A. Oakley, Jeremy S. Alderman, Karen A. Nummy, Zhuojie Wu
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Publication number: 20230126719Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a moisture seal for photonic devices and methods of manufacture. The structure includes: a first trench in at least one substrate material; a guard ring structure with an opening and which at least partially surrounds the first trench; and a second trench at a dicing edge of the substrate, the second trench being lined on sidewalls with barrier material and spacer material over the barrier material.Type: ApplicationFiled: December 23, 2022Publication date: April 27, 2023Inventors: Asli SAHIN, Thomas F. HOUGHTON, Jennifer A. OAKLEY, Jeremy S. ALDERMAN, Karen A. NUMMY, Zhuojie WU
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Patent number: 11587888Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a moisture seal for photonic devices and methods of manufacture. The structure includes: a first trench in at least one substrate material; a guard ring structure with an opening and which at least partially surrounds the first trench; and a second trench at a dicing edge of the substrate, the second trench being lined on sidewalls with barrier material and spacer material over the barrier material.Type: GrantFiled: December 13, 2019Date of Patent: February 21, 2023Assignee: GLOBALFOUNDRIES U.S. INC.Inventors: Asli Sahin, Thomas F. Houghton, Jennifer A. Oakley, Jeremy S. Alderman, Karen A. Nummy, Zhuojie Wu
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Publication number: 20210183791Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a moisture seal for photonic devices and methods of manufacture. The structure includes: a first trench in at least one substrate material; a guard ring structure with an opening and which at least partially surrounds the first trench; and a second trench at a dicing edge of the substrate, the second trench being lined on sidewalls with barrier material and spacer material over the barrier material.Type: ApplicationFiled: December 13, 2019Publication date: June 17, 2021Inventors: Asli SAHIN, Thomas F. HOUGHTON, Jennifer A. OAKLEY, Jeremy S. ALDERMAN, Karen A. NUMMY, Zhuojie WU
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Patent number: 9589895Abstract: The present invention relates generally to semiconductor devices and more particularly, to a structure and method of creating a non-permeable edge seal around a whole wafer. The edge seal may be located between an inner region of a wafer comprising product chips and an outer edge of the wafer. The edge seal may comprise a fillet region adjacent the inner region, and a dielectric extension adjacent the fillet region. The dielectric extension region may be impermeable to moisture and composed of a dielectric layer on the wafer and a capping layer on the dielectric layer. The fillet region may comprise a lower metal fillet directly on the wafer, a dielectric layer on the lower metal fillet, an upper metal fillet on the dielectric layer, and a capping layer on the upper metal fillet. The fillet region may be adjacent to and in contact with a permeable layer formed on the product region.Type: GrantFiled: April 15, 2015Date of Patent: March 7, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Gregory Bazan, Thomas F. Houghton
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Publication number: 20160307848Abstract: The present invention relates generally to semiconductor devices and more particularly, to a structure and method of creating a non-permeable edge seal around a whole wafer. The edge seal may be located between an inner region of a wafer comprising product chips and an outer edge of the wafer. The edge seal may comprise a fillet region adjacent the inner region, and a dielectric extension adjacent the fillet region. The dielectric extension region may be impermeable to moisture and composed of a dielectric layer on the wafer and a capping layer on the dielectric layer. The fillet region may comprise a lower metal fillet directly on the wafer, a dielectric layer on the lower metal fillet, an upper metal fillet on the dielectric layer, and a capping layer on the upper metal fillet. The fillet region may be adjacent to and in contact with a permeable layer formed on the product region.Type: ApplicationFiled: April 15, 2015Publication date: October 20, 2016Inventors: GREGORY BAZAN, THOMAS F. HOUGHTON
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Patent number: 8894800Abstract: A layer of polymer material is applied on a peripheral region of at least one of the two substrates to be bonded prior to bonding. The bonded structure formed thereby includes a first substrate, a second substrate in direct contact with the first substrate, and a ring of the polymer material in direct contact with the first substrate at a first interface and in direct contact with the second substrate. The ring of polymer material laterally surrounds and seals the interface at which the first substrate contacts the second substrate. A ring-shaped cavity can be formed within the polymeric ring. Alternately, the first interface and the second interface can be contiguous without a ring-shaped cavity between the first and second substrates.Type: GrantFiled: February 26, 2013Date of Patent: November 25, 2014Assignee: International Business Machines CorporationInventors: Mutka G. Farooq, Thomas F. Houghton, Nitin Parbhoo, Richard P. Volant
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Patent number: 8613996Abstract: A layer of polymer material is applied on a peripheral region of at least one of the two substrates to be bonded prior to bonding. The bonded structure formed thereby includes a first substrate, a second substrate in direct contact with the first substrate, and a ring of the polymer material in direct contact with the first substrate at a first interface and in direct contact with the second substrate. The ring of polymer material laterally surrounds and seals the interface at which the first substrate contacts the second substrate. A ring-shaped cavity can be formed within the polymeric ring. Alternately, the first interface and the second interface can be contiguous without a ring-shaped cavity between the first and second substrates.Type: GrantFiled: October 21, 2009Date of Patent: December 24, 2013Assignee: International Business Machines CorporationInventors: Mukta G. Farooq, Thomas F. Houghton, Nitin Parbhoo, Richard P. Volant
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Publication number: 20110091685Abstract: A layer of polymer material is applied on a peripheral region of at least one of the two substrates to be bonded prior to bonding. The bonded structure formed thereby includes a first substrate, a second substrate in direct contact with the first substrate, and a ring of the polymer material in direct contact with the first substrate at a first interface and in direct contact with the second substrate. The ring of polymer material laterally surrounds and seals the interface at which the first substrate contacts the second substrate. A ring-shaped cavity can be formed within the polymeric ring. Alternately, the first interface and the second interface can be contiguous without a ring-shaped cavity between the first and second substrates.Type: ApplicationFiled: October 21, 2009Publication date: April 21, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Mukta G. Farooq, Thomas F. Houghton, Nitin Parbhoo, Richard P. Volant
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Patent number: 7910484Abstract: A method of forming a TEOS oxide layer over an nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide layer formed on a substrate. The method includes forming the nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide layer on a top surface and a top side beveled edge proximate to the top surface of a substrate; removing or preventing formation of a carbon-rich layer on a bottom side bevel edge region proximate to a bottom surface of the substrate or converting the carbon-rich layer to nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide; and forming the TEOS oxide layer on the top surface, the top side beveled edge and the bottom side bevel edge region of the substrate.Type: GrantFiled: January 11, 2008Date of Patent: March 22, 2011Assignee: International Business Machines CorporationInventors: Chester T. Dziobkowski, Thomas F. Houghton, Emily Kinser, Darryl D. Restaino, Yun-Yu Wang
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Publication number: 20090181544Abstract: A method of forming a TEOS oxide layer over an nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide layer formed on a substrate. The method includes forming the nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide layer on a top surface and a top side beveled edge proximate to the top surface of a substrate; removing or preventing formation of a carbon-rich layer on a bottom side bevel edge region proximate to a bottom surface of the substrate or converting the carbon-rich layer to nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide; and forming the TEOS oxide layer on the top surface, the top side beveled edge and the bottom side bevel edge region of the substrate.Type: ApplicationFiled: January 11, 2008Publication date: July 16, 2009Inventors: Chester T. Dziobkowski, Thomas F. Houghton, Emily Kinser, Darryl D. Restaino, Yun-Yu Wang
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Patent number: 7179760Abstract: The present invention relates to a bilayer cap structure for interconnect structures that comprise copper metallization or other conductive metallization. Such bilayer cap structure includes a first cap layer formed by an unbiased high density plasma (HDP) chemical vapor deposition process, and a second cap layer over the first cap layer, where the second cap layer is formed by a biased high density plasma (bHDP) chemical vapor deposition process. During the bHDP chemical vapor deposition process, a low AC bias power is applied to the substrate to increase the ion bombardment on the substrate surface and to induce resputtering of the capping material, thereby forming a seamless second cap layer with excellent reactive ion etching (RIE) selectivity.Type: GrantFiled: May 27, 2005Date of Patent: February 20, 2007Assignee: International Buisness Machines CorporationInventors: Richard A. Conti, Thomas F. Houghton, Michael F. Lofaro, Jeffery B. Maxson, Ann H. McDonald, Yun-Yu Wang, Keith Kwong Hon Wong, Daewon Yang
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Publication number: 20040137745Abstract: A method and apparatus for removing a deposited layer on a bottom surface of a substrate, the deposited layer proximate to an edge of the substrate. The method comprises: providing a chuck for supporting the bottom surface of the substrate, an peripheral portion of the bottom surface proximate to the edge extending past a periphery of the chuck; positioning a shield spaced away from and over a top surface of the substrate, a bottom surface of the shield opposite a top surface of the substrate; directing a reactant containing gas to the bottom surface of the substrate proximate to the edge of the substrate; and converting the reactant gas to a reactant species, the reactant species reacting with the deposited layer in order to cause removal of the deposited layer from the substrate.Type: ApplicationFiled: January 10, 2003Publication date: July 15, 2004Applicant: International Business Machines CorporationInventors: Thomas F. Houghton, Bradley P. Jones, Pavel Smetana, Horatio S. Wildman
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Patent number: 4721689Abstract: A method for simultaneously forming a level of interconnection metallurgy over, and inter-level via studs through, an insulating layer of a semiconductor chip. The method comprises the steps of forming a plurality of via holes in the insulating layer, high-mobility sputtering conductive material on to the surface of the insulating layer and into the via holes therein, masking the conductive material layer, and then ion beam milling through the mask to form a patterned interconnection layer. The high-mobility sputtering step is accomplished by reducing the background pressure to below 10.sup.-7 Torr to eliminate non-mobile species, maintaining a sputter pressure of less than 7 microns, maintaining an appropriate chip bias level to keep the conductive material molecules mobile until they reach their lowest energy state, and maintaining the temperature of the chip at a level so that a high sputter species mobility is maintained.Type: GrantFiled: August 28, 1986Date of Patent: January 26, 1988Assignee: International Business Machines CorporationInventors: Paul N. Chaloux, Jr., Thomas F. Houghton, Richard K. West