Abstract: Photovoltaic cells can be manufactured using a pattern region that substantially covers the usable surface area of a crystalline workpiece. Bars can be etched into the workpiece that extend substantially the entire length of the workpiece. These bars then can be diced to form die or micro-tiles having a width substantially equal to the thickness of the workpiece, and having an edge ratio of about 20:1 or less. Such a process can maximize conversion area, thereby extracting more energy from a given volume of photovoltaic conversion material. Contacts can be placed on opposing edges of the die or micro-tiles to form photovoltaic cells, which in some embodiments can function regardless of orientation in a solar panel.

Abstract: A data storage device comprises a media including a memory layer within which are formable domains associated with information, and a conductive layer disposed over the memory layer, the conductive layer having anisotropically increased electrical conductivity in a thickness direction. A conductive tip contactable with the conductive layer is adapted to form domains within the memory layer and one of the conductive tip and the media is movable to access the memory layer.

Abstract: A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact probes in accordance with the present invention can be applied to a phase change media, for example, to form an indicia in the phase change media by changing the electrical resistivity of a portion of the phase change media.

Abstract: A memory apparatus comprises a media, a tip adapted to write information to and read information from said media, a media movement mechanism attached to said media and configured to move said media in response to media control signals, and a capacitive sensor configured to detect an amount of relative movement of said media and said tip in at least an x-axis direction. The capacitive sensor includes a fixed comb having fingers protruding in an x-axis direction, a moving comb connected having fingers protruding in an x-axis direction, and an electrical path connected to said fixed comb and an electrical path connected to said moving comb. The relative movement in at least the x-axis direction is determined at least in part on a change in capacitance between said fixed and moving combs of said capacitive sensor.

Abstract: Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip having a substantially larger radius of curvature than the resolved portion can be employed by applying such methods. A substantially anisotropic columnar material can focus a current applied between the tip and the media so that the portion is narrower in width than the radius of curvature. Such highly resolved portions form bits in the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.

Abstract: A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact probes in accordance with the present invention can be applied to a phase change media, for example, to form an indicia in the phase change media by changing the electrical resistivity of a portion of the phase change media.

Abstract: Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip having a substantially larger radius of curvature than the resolved portion can be employed by applying such methods. A substantially anisotropic columnar material can focus a current applied between the tip and the media so that the portion is narrower in width than the radius of curvature. Such highly resolved portions form bits in the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.

Abstract: A molecular memory media having a media surface and a platform with read/write heads. The platform and media are moved to allow one of addition, removal, and repositioning of atoms, electrons, and charges on a surface of the media. The media is a material capable of storing data written to it, and detectable using a vibrating tip sensor that resonates at a free space value which is phase shifted when charges or anomalies on a surface of the media are present. Other methods of reading and writing to the media are presented. The media may be enhanced by augmenting grain boundaries of the media vis deposition and removal of PMMA materials. Servo trenches and sync bits identify positions of the read/write heads and maintain alignment during memory operations.

Abstract: A device in accordance with embodiments of the present invention comprises an atomic probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the atomic probe can include a core having a conductive coating. The core can comprise an insulating or conducting material, and the coating can comprise one or more of titanium nitride, platinum, diamond-like carbon, tungsten carbide, tungsten, and tungsten oxide. Atomic probes in accordance with the present invention can be applied to a phase change media, for example to form an indicia in the phase change media by changing the structure of a portion of the media from one of a crystalline or amorphous structure to the other of the crystalline and amorphous structure.

Abstract: A media device includes a phase change media having altered resistivity where data is written to the media. The media includes an overcoat to reduce physical damage inflicted on the media from a device such as a cantilever tip in a molecular memory integrated circuit used to write to or read from the media. Data written to the media can be exist in multiple states, allowing digital and/or analog data to be stored on the media.

Abstract: Memory devices in accordance with the present invention can comprise a molecular memory integrated circuit including a set of actuators capable of moving one or more platforms. In one embodiment the platforms can include either a memory device or a Molecular Array Read/Write Engine (MARE) with a cantilever system having at least one cantilever tip. When a first platform with a memory device is brought within close proximity of a second platform with a MARE, the actuators can position the cantilever tip to a specific location on the memory device. The tip of the cantilever can perform a number of functions to the memory device, including reading the state of the memory device or changing the state of the memory device. This description is not intended to be a complete description of, or limit the scope of, the invention.

Abstract: A molecular memory integrated circuit in accordance with one embodiment of the present invention can include a set of actuators capable of moving a platform. The platform can contain one of a memory device and a Molecular Array Read/Write Engine (MARE) having a cantilever system including at least one cantilever tip. When the memory device platform is brought within close proximity of the MARE platform, the set of actuators can position the at least one cantilever tip to a specific location on the memory device. The at least one cantilever tip can perform a number of functions to the memory device, including reading the state of the memory device or changing the state of the memory device. In other embodiments, a plurality of actuators is capable of moving a plurality of platforms.

Abstract: Memory devices in accordance with the present invention can comprise a molecular memory integrated circuit including a set of actuators capable of moving one or more platforms. In one embodiment the platforms can include either a memory device or a Molecular Array Read/Write Engine (MARE) with a cantilever system having at least one cantilever tip. When a first platform with a memory device is brought within close proximity of a second platform with a MARE, the actuators can position the cantilever tip to a specific location on the memory device. The tip of the cantilever can perform a number of functions to the memory device, including reading the state of the memory device or changing the state of the memory device. This description is not intended to be a complete description of, or limit the scope of, the invention.

Abstract: A media device in accordance with embodiments of the present invention can provide high density data storage. In one embodiment such a media device can include a phase change media having altered resistivity where data is written to the media. The media can include an overcoat to reduce physical damage inflicted on the media from a device such as a cantilever tip in a molecular memory integrated circuit used to write to or read from the media. Data written to the media can be exist in multiple states (for example having multiple resistivity measurements), allowing digital and/or analog data to be stored on the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.

Abstract: A molecular memory medium for storing digital bits at a density of several hundred million per square centimeter. The medium is read and written by a tunnelling probe, and comprises a plane surface and a means for moving the surface relative to the tunnelling probe. Arrayed on the surface are plural memory elements, each storing one bit, and having, relative to the surface, a first positional state and a second positional state, representing the first state and the second state, respectively, of the bit. The positional states are distinguished from one another by a difference in a tunnelling current in the tunnelling probe. The memory element is switched from one positional state to the other by an electrostatic force applied by the tunnelling probe.