Abstract: In an embodiment a silicon substrate includes integrated circuits located on a first surface, a second surface opposite to the first surface, a first via and an ESD protection element, wherein the ESD protection element is fully integrated into the silicon substrate, wherein the ESD protection element is spatially distant from the first via, wherein the ESD protection element is connected to the via by a first rewiring, and wherein the ESD protection element comprises a suppressor diode, a transistor or a thyristor.

Abstract: A semiconductor die and a method for manufacturing a semiconductor die are disclosed. In an embodiment a semiconductor die includes a base body having a semiconductor material and a surface with two contact areas having contact pads at which the semiconductor die is electrically contactable and two metal caps arranged directly at the contact pads.

Abstract: In an embodiment a sensor device includes a sensor chip having a plurality of printed ceramic layers and unprinted ceramic layers, at least one termination layer configured to make electrical contact with an electrically conductive material, wherein the termination layer is formed at least on a top side and/or on a bottom side of the sensor chip, wherein the printed ceramic layers are at least partially printed with an electrically conductive material, and wherein an electrical resistance of the sensor chip is determined by an overlap area of the electrically conductive material or by a distance of the electrically conductive material from the termination layer and at least one damping layer directly located at at least a partial area of an outer surface of the sensor chip, wherein the damping layer includes a material which has a greater elasticity than a material of the termination layer.

Abstract: A component is disclosed. In an embodiment the component includes a light-emitting element and a structured layer having an optical functionality, wherein the structured layer is arranged on the light-emitting element.

Abstract: In an embodiment a ceramic material includes ZnO as main constituent, Y as a first additive, second additives including at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Cr, Co, Mn, Ni and Sb, Si4+ as a first dopant and second dopants having at least one compound containing a metal cation from Al3+, B3+, or Ba2+, wherein a corresponds to a molar proportion of Bi calculated as Bi2O3, b corresponds to a molar proportion of Y calculated as Y2O3, c corresponds to a molar proportion of Al calculated as Al2O3, d corresponds to a molar proportion of Ba calculated as BaO, e corresponds to a molar proportion of B calculated as B2O3, f corresponds to a molar proportion of Si calculated as SiO2, g corresponds to a molar proportion of Ni calculated as NiO, h corresponds to a molar proportion of Co calculated as Co3O4, i corresponds to a molar proportion of Cr calculated as Cr2O3, j corresponds to a molar proportion of Sb calculated as Sb2O3, and k cor

Abstract: An electronic device is disclosed. In an embodiment an electronic device includes at least one first carrier and at least one semiconductor chip, wherein the first carrier has a cavity in which the semiconductor chip is arranged.

Abstract: In an embodiment an LED module includes a support having at least two segments, wherein each segment is configured to emit light, wherein each segment has at least two light-emitting diodes that differ in terms of their colors, wherein the support has a multilayer structure and/or wherein the support has a substrate having a ceramic material and the ceramic material includes aluminum nitride, aluminum oxide or a varistor ceramic, and wherein the LED module is configured to set a brightness and a color of the emitted light separately for each segment.

Abstract: An LED module is disclosed. In an embodiment an LED module includes a thermally conductive substrate made of a multilayer ceramic, at least one LED on the substrate, passive SMD components arranged on the substrate, a passive component integrated in the substrate and a heat spreader configured to dissipate waste heat in horizontal and vertical directions.

Abstract: In an embodiment a sensor device includes a sensor chip having a plurality of printed ceramic layers and unprinted ceramic layers, at least one termination layer configured to make electrical contact with an electrically conductive material, wherein the termination layer is formed at least on a top side and/or on a bottom side of the sensor chip, wherein the printed ceramic layers are at least partially printed with an electrically conductive material, and wherein an electrical resistance of the sensor chip is determined by an overlap area of the electrically conductive material or by a distance of the electrically conductive material from the termination layer and at least one damping layer directly located at at least a partial area of an outer surface of the sensor chip, wherein the damping layer includes a material which has a greater elasticity than a material of the termination layer.

Abstract: In an embodiment an LED module includes a support having at least two segments, wherein each segment is configured to emit light, wherein each segment has at least two light-emitting diodes that differ in terms of their colors, wherein the support has a multilayer structure and/or wherein the support has a substrate having a ceramic material and the ceramic material includes aluminum nitride, aluminum oxide or a varistor ceramic, and wherein the LED module is configured to set a brightness and a color of the emitted light separately for each segment.

Abstract: In an embodiment a multilayer varistor includes a ceramic body made from a varistor material, wherein the ceramic body includes a plurality of inner electrodes, first regions and second regions, wherein the varistor material in the first regions has a first average grain size DA, wherein the varistor material in the second regions has a second average grain size DB, and wherein DA<DB.

Abstract: A ceramic multi-layer component and a method for producing a ceramic multi-layer component are disclosed. In an embodiment a ceramic multi-layer component includes a stack with ceramic layers and electrode layers arranged between them, wherein the ceramic layers and the electrode layers are arranged above one another along a stacking direction, wherein at least one first electrode layer extends along a first main extension direction from a first end region to a second end region of the first electrode layer, and wherein the at least one first electrode layer has a current-carrying capacity that decreases along the first main extension direction.

Abstract: In an embodiment a multilayer varistor includes a ceramic body made from a varistor material, wherein the ceramic body includes a plurality of inner electrodes, first regions and second regions, wherein the varistor material in the first regions has a first average grain size DA, wherein the varistor material in the second regions has a second average grain size DB, and wherein DA<DB.

Abstract: A component is disclosed. In an embodiment the component includes a light-emitting element and a structured layer having an optical functionality, wherein the structured layer is arranged on the light-emitting element.

Abstract: A ceramic multi-layer component and a method for producing a ceramic multi-layer component are disclosed. In an embodiment a ceramic multi-layer component includes a stack with ceramic layers and electrode layers arranged between them, wherein the ceramic layers and the electrode layers are arranged above one another along a stacking direction, wherein at least one first electrode layer extends along a first main extension direction from a first end region to a second end region of the first electrode layer, and wherein the at least one first electrode layer has a current-carrying capacity that decreases along the first main extension direction.

Abstract: The present invention relates to a carrier (2) with a passive cooling function for a semiconductor component (3), having a main body (6) with a top side (7) and a bottom side (8) and at least one electrical component (13, 13a, 13b) that is embedded in the main body (6), wherein the carrier (2) has a first thermal via (14), which extends from the top side (7) of the main body (6) to the at least one electrical component (13, 13a, 13b), wherein the carrier (2) has a second thermal via (15), which extends from the at least one electrical component (13, 13a, 13b) to the bottom side (8) of the main body (6), and wherein the at least one embedded electrical component (13, 13a, 13b) is electrically contacted by the first and the second thermal via (14, 15).

Abstract: An electronic device is disclosed. In an embodiment an electronic device includes at least one first carrier and at least one semiconductor chip, wherein the first carrier has a cavity in which the semiconductor chip is arranged.

Abstract: In an embodiment a ceramic material includes ZnO as main constituent, Y as a first additive, second additives including at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Cr, Co, Mn, Ni and Sb, Si4+ as a first dopant and second dopants having at least one compound containing a metal cation from Al3+, B3+, or Ba2+, wherein a corresponds to a molar proportion of Bi calculated as Bi2O3, b corresponds to a molar proportion of Y calculated as Y2O3, c corresponds to a molar proportion of Al calculated as Al2O3, d corresponds to a molar proportion of Ba calculated as BaO, e corresponds to a molar proportion of B calculated as B2O3, f corresponds to a molar proportion of Si calculated as SiO2, g corresponds to a molar proportion of Ni calculated as NiO, h corresponds to a molar proportion of Co calculated as Co3O4, i corresponds to a molar proportion of Cr calculated as Cr2O3, j corresponds to a molar proportion of Sb calculated as Sb2O3, and k cor

Abstract: A substrate is disclosed. In an embodiment, a substrate includes a ceramic main body, an organic surface structure on at least one first outer face of the ceramic main body and outer redistribution layers integrated into the organic surface structure.

Abstract: A multi-LED system is disclosed. In an embodiment a multi-LED system includes a ceramic multilayer substrate in which at least two ESD protection structures are integrated, at least two light-emitting diodes arranged on the substrate and at least two capping layers covering one of the light-emitting diodes.