Patents by Inventor Thomas Ferraguto

Thomas Ferraguto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6141183
    Abstract: A pole-trimmed writer for an MR read/write data transducer which may be produced without significant re-deposition of Al.sub.2 O.sub.3 or NiFe on the sides of the writer poles. The process disclosed herein advantageously provides an upper (top) pole which is processed to project a pair of relatively thin, laterally extending lower flanges, prior to the use of the upper pole as a mask to subsequent ion milling of the lower pole, or shared shield. In a preferred embodiment, the process for producing the flange is implemented in conjunction with the deposition of a single copper (Cu) or dual Al.sub.2 O.sub.3 and chromium (Cr) overlayers formed on the upper pole seed layer followed by the top pole formation and selective removal of a predetermined amount of the underlying portions of the gap material prior to a subsequent ion milling operation and further processing of the read/write head.
    Type: Grant
    Filed: July 14, 1998
    Date of Patent: October 31, 2000
    Assignee: Matsushita-Kotobukie Electronics Industries, Ltd.
    Inventors: Andrew L. Wu, Paul Duval, Thomas Ferraguto
  • Patent number: 5804085
    Abstract: A pole-trimmed writer for an MR read/write data transducer which may be produced without significant re-deposition of Al.sub.2 O.sub.3 or NiFe on the sides of the writer poles. The process disclosed herein advantageously provides an upper (top) pole which is processed to project a pair of relatively thin, laterally extending lower flanges, prior to the use of the upper pole as a mask to subsequent ion milling of the lower pole, or shared shield. In a preferred embodiment, the process for producing the flange is implemented in conjunction with the deposition of a single copper (Cu) or dual Al.sub.2 O.sub.3 and chromium (Cr) overlayers formed on the upper pole seed layer followed by the top pole formation and selective removal of a predetermined amount of the underlying portions of the gap material prior to a subsequent ion milling operation and further processing of the read/write head.
    Type: Grant
    Filed: January 30, 1997
    Date of Patent: September 8, 1998
    Assignee: Quantum Corporation
    Inventors: Andrew L. Wu, Paul Duval, Thomas Ferraguto