Patents by Inventor Thomas Ferrotti

Thomas Ferrotti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Laser device and process for fabricating such a laser device
    Patent number: 10511147
    Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: December 17, 2019
    Assignees: Commissariat A L'Energie Atomique et aux Energies Alternatives, STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Thomas Ferrotti, Badhise Ben Bakir, Alain Chantre, Sebastien Cremer, Helene Duprez
  • LASER DEVICE AND PROCESS FOR FABRICATING SUCH A LASER DEVICE
    Publication number: 20180278021
    Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
    Type: Application
    Filed: May 30, 2018
    Publication date: September 27, 2018
    Applicants: Commissariat A L'Energie Atomique et aux Energies Alternatives, STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Thomas Ferrotti, Badhise Ben Bakir, Alain Chantre, Sebastien Cremer, Helene Duprez
  • Laser device and process for fabricating such a laser device
    Patent number: 10014660
    Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: July 3, 2018
    Assignees: Commisariat A L'Energie Atomique et aux Energies Alternatives, STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Thomas Ferrotti, Badhise Ben Bakir, Alain Chantre, Sebastien Cremer, Helene Duprez
  • Laser device and process for fabricating such a laser device
    Patent number: 9899800
    Abstract: A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.
    Type: Grant
    Filed: November 11, 2016
    Date of Patent: February 20, 2018
    Assignees: Commissariat A L'Energie Atomique et aux Energies Alternatives, ST Microelectronics SA, ST Microelectronics (Crolles 2) SAS
    Inventors: Thomas Ferrotti, Badhise Ben Bakir, Alain Chantre, Sebastien Cremer, Helene Duprez
  • LASER DEVICE AND PROCESS FOR FABRICATING SUCH A LASER DEVICE
    Publication number: 20170141541
    Abstract: A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.
    Type: Application
    Filed: November 11, 2016
    Publication date: May 18, 2017
    Applicants: Commissariat a l'energie atomique et aux energies alternatives, ST Microelectronics SA, ST Microelectronics (Crolles 2) SAS
    Inventors: Thomas FERROTTI, Badhise BEN BAKIR, Alain CHANTRE, Sebastien CREMER, Helene DUPREZ
  • LASER DEVICE AND PROCESS FOR FABRICATING SUCH A LASER DEVICE
    Publication number: 20160056612
    Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
    Type: Application
    Filed: August 17, 2015
    Publication date: February 25, 2016
    Applicants: Commissariat A L'Energie Atomique et aux Energies Alternatives, STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Thomas Ferrotti, Badhise Ben Bakir, Alain Chantre, Sebastien Cremer, Helene Duprez