Abstract: A method of manufacturing a semiconductor device comprising a polymer film comprising a polymer obtained by polymerization of compounds having the general formula (I): X1mR13-mSi—R3—(R52Si—O)n—Si—R4—SiX2pR23-P wherein each X1 and X2 is independently selected from the group of hydrogen and organic or inorganic hydrolyzable groups; each R1 and R2 is independently selected from the group of hydrocarbyl residues; each R3 and R4 is independently selected from the group of alkylene having 1 to 6 carbon atoms and arylene having 6 to 10 carbon atoms; each R5 is selected from alkyl groups having 1 to 4 carbon atoms and phenyl groups; n is an integer of 1 to 5; m is an integer of 1 to 3; and p is an integer of 1 to 3. The polymer films are used as low dielectric constant films in semiconductor devices, in particular as barrier layers for filling spaces between metal interconnects.

Abstract: Novel functional poly(organosiloxane) resin compositions, methods of producing novel poly(organosiloxane) coating compositions, and coated substrates having improved properties suitable for, e.g., optical applications for achieving predetermined properties of refractive index, absorption coefficient and other properties. Specific embodiments comprise silicon precursors having a substituent that contains a fused aromatic structure exhibiting a butterfly shape, wherein the half-planes defined by aromatic rings joined by intermediate N and S atoms exhibit a dihedral angle of <165 #, whereas the C—S—C angle of the folded thiazine, in particular 1,4-thiazine, ring is less than 110 #. In on embodiment, the silicon precursor has a substituent that comprises an optionally substituted thiazine ring.

Abstract: Silanol-containing organic-inorganic hybrid coatings on semiconductor substrates for forming patterns thereon. The present coatings can be produced by coating of semiconductor substrates with metal and silanol containing polyhydridosilsesquioxane resin solutions. Provided herein is also a method for patterning a metal and silanol containing polyhydridosilsesquioxane coated substrate with radiation of light at a specific wavelength, the method comprising the steps of irradiating a coated substrate along a selected pattern to form an irradiated structure with a region of irradiated coating and a region with un-irradiated coating and selectively developing the irradiated structure to remove a substantial portion of the un-irradiated coating to form a patterned substrate. The invention allows for obtaining a preselected silanol content polyhydridosilsesquioxane resin, and adjustment of the silanol content will make it possible to obtain a highly sensitive coating for application in EUV.

Abstract: Carbon-carbon unsaturated bond containing, halogen containing, and solubility-enhancer containing coatings on semiconductor substrates for forming patterns thereon. The present coatings can be produced by coating of semiconductor substrates with carbon-carbon unsaturated bond-containing, halogen-containing, and solubility-enhancer containing polyhydrogensilsesquioxane resin solutions. Provided herein is also a method for patterning substrate coating of a polyhydrogensilsesquioxane containing a carbon-carbon unsaturated bond, halogen, and solubility-enhancer with radiation of light, the method comprising the steps of irradiating a coated substrate along a selected pattern to form an irradiated structure with a region of irradiated coating and a region with un-irradiated coating and selectively developing the irradiated structure to remove a substantial portion of the un-irradiated coating to form a patterned substrate.

Abstract: Carbon-carbon unsaturated bond containing, halogen containing, and solubility-enhancer containing coatings on semiconductor substrates for forming patterns thereon. The present coatings can be produced by coating of semiconductor substrates with carbon-carbon unsaturated bond-containing, halogen-containing, and solubility-enhancer containing polyhydrogensilsesquioxane resin solutions. Provided herein is also a method for patterning substrate coating of a polyhydrogensilsesquioxane containing a carbon-carbon unsaturated bond, halogen, and solubility-enhancer with radiation of light, the method comprising the steps of irradiating a coated substrate along a selected pattern to form an irradiated structure with a region of irradiated coating and a region with un-irradiated coating and selectively developing the irradiated structure to remove a substantial portion of the un-irradiated coating to form a patterned substrate.

Abstract: Silanol-containing organic-inorganic hybrid coatings on semiconductor substrates for forming patterns thereon. The present coatings can be produced by coating of semiconductor substrates with metal and silanol containing polyhydridosilsesquioxane resin solutions. Provided herein is also a method for patterning a metal and silanol containing polyhydridosilsesquioxane coated substrate with radiation of light at a specific wavelength, the method comprising the steps of irradiating a coated substrate along a selected pattern to form an irradiated structure with a region of irradiated coating and a region with un-irradiated coating and selectively developing the irradiated structure to remove a substantial portion of the un-irradiated coating to form a patterned substrate. The invention allows for obtaining a preselected silanol content polyhydridosilsesquioxane resin, and adjustment of the silanol content will make it possible to obtain a highly sensitive coating for application in EUV.

Abstract: Described herein is a feasible, significantly simplified production method that avoids challenging lactonization steps and converts a low molecular weight aliphatic polyester, consisting of hydroxy acids and a comonomer, whose molecular weight has been increased by step-growth polymerization reactions. The molecular weight of the aliphatic polyester, based on comparison of initial and final weight average molecular weights (Mw,1/Mw,2), increased significantly at a rate which permits the use of reactive extrusion to produce high molecular weight aliphatic polyesters in a simple, economically feasible manner.

Abstract: Described herein is a feasible, significantly simplified production method that avoids challenging lactonization steps and converts a low molecular weight aliphatic polyester, consisting of hydroxy acids and a comonomer, whose molecular weight has been increased by step-growth polymerization reactions. The molecular weight of the aliphatic polyester, based on comparison of initial and final weight average molecular weights (Mw,1/Mw,2), increased significantly at a rate which permits the use of reactive extrusion to produce high molecular weight aliphatic polyesters in a simple, economically feasible manner.

Abstract: The present invention relates to a method for preparation a glycolide polyester by ring opening polymerization characterized in that glycolide monomer with optional co-monomer(s) of cyclic ester(s) is/are subjected to ring opening polymerization in the presence of a dispersion stabilizer and a catalyst, said catalyst being selected for precipitating glycolide homopolymer or copolymer from solvent, said solvent being selected so that the glycolide monomer and the optional co-monomer(s), the dispersion stabilizer and the catalyst are soluble therein but said glycolide homopolymer or copolymer is non-soluble. The present invention further relates to an in situ ring opening polymerizing process product, and to use of said glycolide polyester, and to further processing of said glycolide polyester.

Abstract: Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminum oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate.

Abstract: The present invention relates to a method for preparation a glycolide polyester by ring opening polymerization characterized in that glycolide monomer with optional co-monomer(s) of cyclic ester(s) is/are subjected to ring opening polymerization in the presence of a dispersion stabilizer and a catalyst, said catalyst being selected for precipitating glycolide homopolymer or copolymer from solvent, said solvent being selected so that the glycolide monomer and the optional co-monomer(s), the dispersion stabilizer and the catalyst are soluble therein but said glycolide homopolymer or copolymer is non-soluble. The present invention further relates to an in situ ring opening polymerizing process product, and to use of said glycolide polyester, and to further processing of said glycolide polyester.

Abstract: Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminium oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate.

Abstract: Thin films are disclosed that are suitable as thin films in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a high silicon content film.

Abstract: The invention relates to novel transglycosylation products and their preparation. The transglycosylation products according to the invention are prepared from starch derivatives, such as esters or ethers of starch. The products are obtained by reacting a starch derivative with an alcohol in the presence of an acid catalyst. The forming product is separated by precipitation or by removing any unreacted alcohol by evaporation. In the products according to the invention the good properties of starch derivatives, such as the excellent water resistance of esters, are combined with the versatility of transglycoside products. The products can be used as adhesives, in which case they are formulated, for example as hot-melt adhesives, and as comonomers, prepolymers or macroinitiators in the preparation of polymers.