Abstract: A wideband tuning circuit suitable for a low-voltage silicon process includes a plurality of frequency band modules for generating a frequency within a particular frequency band of the tuning range. Each frequency band module includes a tuning sensitivity controller responsive to a tuning sensitivity control signal, a sub-band tuning network responsive to one of the frequency band module control signals, a resonator inductor, and a negative resistance generator coupled to the inductor to offset resistance of the inductor. A frequency band module control signal causes the sub-band tuning network to select a sub-band within the frequency band of one of the frequency band module, and a tuning sensitivity control signal causes the tuning sensitivity controller to control the output frequency of the frequency band module within a selected sub-band. A multiplexer selectively couples the output frequency from one of the frequency band modules in response to a band select signal.