Abstract: The disclosure relates to a semiconductor die, comprising a silicon carbide (SiC) semiconductor body; a passivation system on a first side of the SiC semiconductor body ; the passivation system comprising an inorganic passivation layer system and an organic layer on the inorganic passivation layer system, a lateral edge of the inorganic passivation layer system arranged on the SiC semiconductor body, wherein the inorganic passivation layer system is laterally set back under the organic layer, the lateral edge of the inorganic passivation layer system being covered by the organic layer.

Abstract: The disclosure relates to a semiconductor die, comprising a silicon carbide (SiC) semiconductor body in which a device structure with a load terminal is formed; a metallization on a first side of the SiC semiconductor body, in which a load pad is formed; a passivation system on the metallization, which has an opening on the load pad; wherein the passivation system, as viewed in a sectional plane perpendicular to a lateral edge of the load pad, extends between an outer lateral position x1 aside the load pad and an inner lateral position x2 on the load pad, wherein an interruption is provided in at least one layer of the passivation system at an interruption position xi between the lateral edge of the load pad and the inner lateral position x2.

Abstract: The disclosure relates to a semiconductor die, comprising a silicon carbide (SiC) semiconductor body; a passivation system on a first side of the SiC semiconductor body; the passivation system comprising an inorganic passivation layer system and an organic layer on the inorganic passivation layer system, a lateral edge of the inorganic passivation layer system arranged on the SiC semiconductor body, wherein the inorganic passivation layer system is laterally set back under the organic layer, the lateral edge of the inorganic passivation layer system being covered by the organic layer.

Abstract: The present application relates to a semiconductor die, comprising a silicon carbide (SiC) semiconductor body comprising a first doping type region; a metallization on a first side of the SiC semiconductor body; an inorganic passivation layer system; a lateral edge of the inorganic passivation layer system arranged on the SiC semiconductor body, wherein the lateral edge of the inorganic passivation layer system is laterally offset inwards from a lateral edge of the SiC semiconductor body, the SiC semiconductor body being uncovered by the inorganic passivation layer system in an edge area, wherein a second doping type well is formed at the first side of the SiC semiconductor body in the first doping type region, the second doping type well extending from below the inorganic passivation layer system into the edge area.

Abstract: A semiconductor device includes a silicon carbide semiconductor body. A first shielding region of a first conductivity type is connected to a first contact at a first surface of the silicon carbide semiconductor body. A current spread region of a second conductivity type is connected to a second contact at a second surface of the silicon carbide semiconductor body. A doping concentration profile of the current spread region includes peaks along a vertical direction perpendicular to the first surface. A doping concentration of one peak or one peak-group of the peaks is at least 50% higher than a doping concentration of any other peak of the current spread region. A vertical distance between the one peak or the one peak-group of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region.

Abstract: The present disclosure relates to an apparatus for ascertaining a rotation angle of a magnetic field orientation-influencing test object with an axis of rotation in the z-direction. The apparatus may include at least three first magnetic field sensor elements, which are sensitive to magnetic field components in the z-direction. The apparatus may include at least three second magnetic field sensor elements, which are sensitive to magnetic field components in an xy-plane. The apparatus may include a device for ascertaining the rotation angle on the basis of a first combination signal which is based on multiple combinations of measurement signals from the first magnetic field sensor elements and the second magnetic field sensor elements.

Abstract: A semiconductor device includes a silicon carbide semiconductor body. A first shielding region of a first conductivity type is connected to a first contact at a first surface of the silicon carbide semiconductor body. A current spread region of a second conductivity type is connected to a second contact at a second surface of the silicon carbide semiconductor body. A doping concentration profile of the current spread region includes peaks along a vertical direction perpendicular to the first surface. A doping concentration of one peak or one peak-group of the peaks is at least 50% higher than a doping concentration of any other peak of the current spread region. A vertical distance between the one peak or the one peak-group of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region.

Abstract: A semiconductor device includes a silicon carbide semiconductor body. A first shielding region of a first conductivity type is connected to a first contact at a first surface of the silicon carbide semiconductor body. A current spread region of a second conductivity type is connected to a second contact at a second surface of the silicon carbide semiconductor body. A doping concentration profile of the current spread region includes peaks along a vertical direction perpendicular to the first surface. A doping concentration of one peak or one peak-group of the peaks is at least 50% higher than a doping concentration of any other peak of the current spread region. A vertical distance between the one peak or the one peak-group of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region.

Abstract: A silicon carbide device includes a silicon carbide body including a source region of a first conductivity type, a cathode region of the first conductivity type and separation regions of a second conductivity type. A stripe-shaped gate structure extends along a first direction and adjoins the source region and the separation regions. The silicon carbide device includes a first load electrode. Along the first direction, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region. The source region and the first load electrode form an ohmic contact. The first load electrode and the cathode region form a Schottky contact.

Abstract: A semiconductor device includes a silicon carbide semiconductor body. A first shielding region of a first conductivity type is connected to a first contact at a first surface of the silicon carbide semiconductor body. A current spread region of a second conductivity type is connected to a second contact at a second surface of the silicon carbide semiconductor body. A doping concentration profile of the current spread region includes peaks along a vertical direction perpendicular to the first surface. A doping concentration of one peak or one peak-group of the peaks is at least 50% higher than a doping concentration of any other peak of the current spread region. A vertical distance between the one peak or the one peak-group of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region.

Abstract: The present disclosure relates to an apparatus for ascertaining a rotation angle of a magnetic field orientation-influencing test object with an axis of rotation in the z-direction. The apparatus may include at least three first magnetic field sensor elements, which are sensitive to magnetic field components in the z-direction. The apparatus may include at least three second magnetic field sensor elements, which are sensitive to magnetic field components in an xy-plane. The apparatus may include a device for ascertaining the rotation angle on the basis of a first combination signal which is based on multiple combinations of measurement signals from the first magnetic field sensor elements and the second magnetic field sensor elements.

Abstract: A silicon carbide device includes a silicon carbide body including a source region of a first conductivity type, a cathode region of the first conductivity type and separation regions of a second conductivity type. A stripe-shaped gate structure extends along a first direction and adjoins the source region and the separation regions. The silicon carbide device includes a first load electrode. Along the first direction, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region. The source region and the first load electrode form an ohmic contact. The first load electrode and the cathode region form a Schottky contact.