Abstract: In a hemodiafiltration apparatus, a control and command unit (11) halts a replacement fluid supply pump (8) and contemporaneously modifies the control mode of a blood pump (1) passing from a control based on the pump velocity to a control based on the blood pressure measured by a sensor (12) arranged downstream of a hemodiafilter (3). The aim is to prevent risks due to excessive hemoconcentration in the blood circuit between the ultrafiltration zone and the infusion zone.

Abstract: In a hemodiafiltration apparatus, a control and command unit (11) halts a replacement fluid supply pump (8) and contemporaneously modifies the control mode of a blood pump (1) passing from a control based on the pump velocity to a control based on the blood pressure measured by a sensor (12) arranged downstream of a hemodiafilter (3). The aim is to prevent risks due to excessive hemo-concentration in the blood circuit between the ultrafiltration zone and the infusion zone.

Abstract: In methods for smoothing or polishing a surface of a wafer, such as a silicon wafer, a liquid layer is formed on a surface of the wafer. The liquid layer may be an invisible microscopic layer, or a visible macroscopic layer. A flow of an oxidizing gas is directed over, against or onto the liquid layer of the surface of the wafer, in the presence of an etchant. The flow of gas thins the liquid layer at high points or areas on the surface of the wafer more than at low points or areas on the wafer surface. Consequently, the high points are oxidized and etched away more than the low points. As a result, the wafer surface is smoothed and polished.

Abstract: A strip detector for detecting ionizing particles and/or radiation, consisting of a silicon substrate which, at least on one substrate surface thereof, provides for n-doped zones spaced from each other as strips and voltage supply regions as well as a p-doped isolation zone between the n-doped zones, and including a first isolator layer as well as metal strips disposed above the n-doped zones, wherein immediately above the first isolated layer there is at least one further isolator layer provided and that at least one of the isolator layers is discontinuous in its projection above the intermediate zone of the two adjacent n-doped zones, and wherein the p-doped isolation zone presents a lateral distribution of concentration of the p-type doping material such that in the zone below the discontinuity of the discontinuous isolator layer, a higher concentration of doping material is present than in the isolation regions immediately adjacent to the n-doped zones.