Abstract: A data processing system 2 includes multiple out-of-order issue queues 8, 10. A master serialisation instruction MSI received by a first issue queue 8 is detected by slave generation circuitry 24 which generates a slave serialisation instruction SSI added to a second issue queue 10. The master serialisation instruction MSI manages serialisation relative to the instructions within the first issue queue 8. The slave serialisation instruction SSI manages serialisation relative to the instructions within the second issue queue 10. The master serialisation instruction MSI and the slave serialisation instruction SSI are removed when both have met their serialisation conditions and are respectively the oldest instructions within their issue queues.

Abstract: A data processing apparatus comprises register rename circuitry for mapping architectural register specifiers specified by instructions to physical registers to be accessed in response to the instructions. Available register control circuitry controls which physical registers are available for mapping to an architectural register specifier by the register rename circuitry. For at least one group of two or more physical registers, the available register control circuitry controls availability of the registers based on a group tracking indication indicative of whether there is at least one pending access to any of the physical registers in the group.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for receiving, from a computer system, a request comprising a phone number, identifying a primary channel and one or more secondary channels based on, at least in part, respective performance data of the primary and secondary channels, sending a first message comprising a first text string via the primary channel to a destination device associated with the phone number, after sending the first message, determining that a conversion event for the message and the primary channel did not occur within a specified time period, and based on the determining, sending a second message comprising the first text string via a particular secondary channel to the destination device.

Abstract: A high-energy density beam welding process for two panels includes a step that include placing a metal band on the upper face of at least one panel, in the axis of the desired welded joint before welding the panels, so that the metal band is inserted between the panels and the high-energy density beam during the welding step, and so that the thickness of this metal band integrates all of the geometric faults present on the surface of the welded joint.

Abstract: A phase change memory cell has more than one memory region each being a narrowed region of phase change memory material extending between first and second electrodes. Each of the plurality of memory regions can be programmed to be in a low resistance state or a high resistance state by applying suitable programming conditions of current and/or voltage. The resistances of the high resistance states and the programming conditions to convert the high resistance states to the low resistance state are different in each of the plurality of memory regions.

Abstract: A memory device comprises an array of memory cells for storing data and a voltage application unit for applying voltages to the cells for writing data to the cells. Each memory cell has a first layer comprising copper in contact with a second layer comprising a chalcogenide material. The voltage application unit is arranged to write data by switching each cell between a first resistance state and a second, lower, resistance state. The voltage application unit is arranged to switch a cell to the first resistance state by applying a potential difference across the first and second layers such that the potential at the first layer is higher than the potential at the second layer by 0.5 volts or less. The voltage application unit is arranged to switch a cell to the second resistance state by applying a potential difference across the first and second layers such that the potential at the second layer is higher than the potential at the first layer by 0.5 volts or less.

Abstract: A phase change memory cell has more than one memory region (14,18) each being a narrowed region of phase change memory material (2) extending between first and second electrodes (4,6). Each of the plurality of memory regions (14, 18) can be programmed to be in a low resistance state or a high resistance state by applying suitable programming conditions of current and/or voltage. The resistances of the high resistance states and the programming conditions to convert the high resistance states to the low resistance state are different in each of the plurality of memory regions.

Abstract: A phase-change-memory cell is provided which comprises two insulated regions formed in a first phase-change material connected by a region formed in a second phase-change material. The crystallization temperature of the second phase-change material is below the crystallization temperature of the first phase-change material. By locally changing the material properties using a second PCM material, which switches phase at a lower temperature, a localized “hot spot” is obtained.

Abstract: A panel for acoustic treatment connected to a surface of an aircraft, includes—from the outside to the inside—an acoustically resistive porous layer, at least one alveolar structure, and a reflective or impermeable layer, whereby the acoustically resistive porous layer includes—at the outside surface that can be in contact with the aerodynamic flows—one sheet or piece of sheet metal including open zones (14) that allow sound waves to pass and filled zones (16) that do not allow sound waves to pass, characterized in that the sheet or piece of sheet metal of the acoustically resistive layer includes sets of microperforations (18), whereby each set of microperforations forms an open zone (14), the sets of microperforations being separated from one another by at least one series of bands separated by filled zones (16).

Abstract: A phase-change-material memory cell is provided. The cell comprises at least one patterned layer of a phase-change material, and is characterized in that this patterned layer comprises at least two regions having different resistivities. If the resistivity of the phase-change material is higher in a well-defined area with limited dimensions (“hot spot”) than outside this area, then, for a given current flow between the electrodes, advantageously more Joule heat will be generated within this area compared to the area of the phase-change material where the resistivity is lower.

Abstract: A memory device comprises an array of memory cells for storing data and a voltage application unit for applying voltages to the cells for writing data to the cells. Each memory cell has a first layer comprising copper in contact with a second layer comprising a chalcogenide material. The voltage application unit is arranged to write data by switching each cell between a first resistance state and a second, lower, resistance state. The voltage application unit is arranged to switch a cell to the first resistance state by applying a potential difference across the first and second layers such that the potential at the first layer is higher than the potential at the second layer by 0.5 volts or less. The voltage application unit is arranged to switch a cell to the second resistance state by applying a potential difference across the first and second layers such that the potential at the second layer is higher than the potential at the first layer by 0.5 volts or less.

Abstract: The present invention discloses a vertical phase-change-memory (PCM) cell, comprising a stack of a bottom electrode (5) contacting a first layer of phase change material (14), a dielectric layer (12) having an opening (13), a second layer of phase change material (6) in contact with the first layer of phase change material through the opening in the dielectric layer and a top electrode (7) contacting this second layer of phase change material.

Abstract: The invention relates to a panel for an acoustic treatment at the surface of an aircraft, that comprises from the outside to the inside an acoustically resistive porous layer, at least one cellular structure and a reflective or non-permissive layer, wherein the acoustically resistive porous layer includes, at the outer surface that may contact the aerodynamic flows of a sheet or foil, open areas (14) permissive to sound waves and solid area (6) not permissive to sound waves, characterised in that the sheet or foil of the acoustically resistive layer includes sets of microperforations (18), each set of microperforations defining an open area (14), the set of microperforations being separated by at least one series of spaced bands of solid areas (16).

Abstract: A process for the producing a coating for acoustic treatment relative to a leading edge such as an air intake of an aircraft nacelle, the coating including a reflective layer, an alveolar structure, and an acoustically resistive layer, includes: Digitizing the shape of the alveolar structure that it will have when it will be installed at the surface to be treated, Positioning in a virtual manner—so as to define their geometries—two series of bands so as to delimit a tube between, two adjacent bands of a first series, and two second adjacent bands of a second series, Cutting out each band according to their geometries defined above, Producing cut-outs in each band to allow the assembly of the bands, Assembling the bands so as to obtain an alveolar structure that has shapes that are suited to the surface to be treated.

Abstract: A phase-change-material memory cell is provided. The cell comprises at least one patterned layer of a phase-change material, and is characterized in that this patterned layer comprises at least two regions having different resistivities. If the resistivity of the phase-change material is higher in a well-defined area with limited dimensions (“hot spot”) than outside this area, then, for a given current flow between the electrodes, advantageously more Joule heat will be generated within this area compared to the area of the phase-change material where the resistivity is lower.

Abstract: A high-energy density beam welding process for two panels includes a step that include placing a metal band on the upper face of at least one panel, in the axis of the desired welded joint before welding the panels, so that the metal band is inserted between the panels and the high-energy density beam during the welding step, and so that the thickness of this metal band integrates all of the geometric faults present on the surface of the welded joint.

Abstract: The present invention discloses a vertical phase-change-memory (PCM) cell, comprising a stack of a bottom electrode (5) contacting a first layer of phase change material (14), a dielectric layer (12) having an opening (13), a second layer of phase change material (6) in contact with the first layer of phase change material through the opening in the dielectric layer and a top electrode (7) contacting this second layer of phase change material.

Abstract: A phase-change-memory cell is provided which comprises two insulated regions formed in a first phase-change material connected by a region formed in a second phase-change material. The crystallization temperature of the second phase-change material is below the crystallization temperature of the first phase-change material. By locally changing the material properties using a second PCM material, which switches phase at a lower temperature, a localized “hot spot” is obtained.