Abstract: This disclosure concerns optoelectronic transceivers. In one example, a transceiver is implemented as an uncompensated architecture that is substantially compliant with the SFP MSA and is capable of effective operation at a data rate of about 8.5 Gb/s. The transceiver includes a TOSA, ROSA, a printed circuit board, an LDPA disposed on the printed circuit board and configured for communication with the TOSA and the ROSA. Finally, the transceiver includes SFP compliant optical and electrical connections.

Abstract: This disclosure concerns transceivers that include CDR bypass functionality. In one example, a 10 G XFP transceiver module includes integrated CDR functionality for reducing jitter. The 10 G XFP transceiver module also implements CDR bypass functionality so that the CDR can be bypassed at rate less than about 10 Gb/s, such as the Fibre Channel 8.5 Gb/s rate for example.

Abstract: A tunable laser source with integrated optical modulator. The tunable laser source is a widely tunable semiconductor laser that is comprised of an active region on top of a thick, low bandgap, waveguide layer, wherein both the waveguide layer and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator is integrated into the semiconductor laser, wherein the electro-absorption modulator shares the waveguide layer with the semiconductor laser.

Abstract: A tunable laser source (10) with an integrated optical modulator (20). The laser source (10) is a widely tunable semiconductor laser that is comprised of an active region on top of a thick low bandgap, waveguide layer (22), wherein both the waveguide layer (220) and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator (20) is integrated into the semiconductor laser (10), wherein the electro-absorption modulator (20) shares the waveguide layer (22) with the semiconductor laser.

Abstract: A semiconductor tunable laser (10) and an interferometer (12) coupled to the tunable laser (10) are monolithically fabricated in a semiconductor heterostructure. The laser also comprises a buried ridge stripe waveguide laser. The interferometer (12) has a semiconductor optical amplifier (38) coupled in each arm. A cross-gain semiconductor optical amplifier converter is coupled to the interferometer (12). The semiconductor optical amplifier (38) coupled in each arm is biased so that an optical path length difference between the two arms is in antiphase which results in destructive interference. The output of the tunable laser (10) is coupled to a coupler. A semiconductor optical amplifier (38) is used as a gain controller for the semiconductor optical amplifiers in the interferometer (12) to allow wavelength conversion over a larger range of input signal powers.

Abstract: An optical modulator includes first and second modulator segments. The first and second modulator segments form an optical signal path for an optical signal. The optical modulator also includes an electrical signal path capable of receiving and carrying a modulation signal, which is applied to the optical signal at the first and second modulation segments to generate a modulated optical signal. An inductive element may be disposed between electrical inputs to the first and second modulator segments. The optical modulator may be an electro-absorption modulator (EAM). The inductive element may be an inductor or a transmission line segment.

Abstract: An electroabsorption modulator comprises a tandem arrangement of a conventional electroabsorption (EA) modulator element and a phase modulator element. The EA modulator element is driven by the digital data signal and the phase modulator is driven by a chirp tuning control signal, such as the complement of the data signal. By controlling the amplitude and/or bias of the chirp tuning control signal, the frequency chirp of the intensity-modulated output signal from the EA modulator element can be controlled.

Abstract: A wavelength monitor is provided based on the transmission response of an optical filter. The monitor provides feedback to the laser enabling it to lock to any given wavelength within its tuning range. The invention is also a process for integrating the wavelength monitor directly on chip with a variety of tunable semiconductor lasers. The invention also comprises a method for controlling the wavelength of a tunable laser by using a wavelength monitor to measure the output light and provide feedback to a control system. The laser and wavelength monitor are integrated together on a single indium phosphide chip. The wavelength monitor comprises a filter with a wavelength dependent transmission function and a pair of detectors. One detector is illuminated with light that has passed through the filter and the other provides a reference to measure the input intensity. Taking the ratio of the filtered light level to the unfiltered light provides a wavelength dependent wavelength.

Abstract: An electroabsorption modulator comprises a tandem arrangement of a conventional electroabsorption (EA) modulator element and a phase modulator element. The EA modulator element is driven by the digital data signal and the phase modulator is driven by a chirp tuning control signal, such as the complement of the data signal. By controlling the amplitude and/or bias of the chirp tuning control signal, the frequency chirp of the intensity-modulated output signal from the EA modulator element can be controlled.

Abstract: An optical modulator includes first and second modulator segments. The first and second modulator segments form an optical signal path for an optical signal. The optical modulator also includes an electrical signal path capable of receiving and carrying a modulation signal, which is applied to the optical signal at the first and second modulation segments to generate a modulated optical signal. An inductive element may be disposed between electrical inputs to the first and second modulator segments. The optical modulator may be an electro-absorption modulator (EAM). The inductive element may be an inductor or a transmission line segment.

Abstract: The present invention is directed toward an edge detecting photodiode that includes a waveguide comprising a p-doped InP cladding layer, an n-doped InP cladding layer, a p-side waveguide layer, an n-side waveguide layer, and an InGaAs absorption layer therebetween, in which the absorption layer is doped to have an absorption region and a depletion region that, when under bias, will overlap by an amount sufficient to substantially balance the transit time of positive and negative charged carriers across the waveguide. The photodiode is preferably formed on an InP substrate. The photodiode preferably has a planar polymer layer in contact with the InP substrate. The polymer layer also preferably has a ridge formed therein for the photodiode waveguide. The polymer layer may have a coplanar transmission line deposited thereon, and a pair of metal-insulator-metal (“MIM”) capacitors may be incorporated into the coplanar transmission line.

Abstract: Simultaneous demultiplexing and clock recovery of high-speed (e.g., 80 Gbps or 160 Gbps) optical time division multiplexing (OTDM) signals is achieved using a tandem electro-absorption modulator (TEAM). The TEAM has a monolithically integrated SOA to compensate the insertion loss and two EAMs to reduce the switching window. The demultiplexing and clock recovery may be performed by a single TEAM, or by two or more TEAMs. A fiber Raman amplifier may be used to boost the intensity of the OTDM signals during transmission.

Abstract: An optical device for coupling an optical signal to an optical detector is disclosed. The optical device includes a mode compression section disposed between an optical input source and a photodetector, which enables efficient coupling between the optical input source and the photodetector.