Patents by Inventor Thomas H. Ivers
Thomas H. Ivers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7480990Abstract: Methods for forming conductor contacts provide for etching through a capping layer located upon a conductor contact region within a substrate. A first pair of methods provide for etching through at least a lower thickness of the capping layer with other than a reactive ion etch to provide an exposed conductor contact region. A partially overlapping second pair of methods provides for converting at least an upper thickness of the capping layer to a converted material layer that is removed incident to providing an exposed conductor contact region. As adjunct to any of the methods, a liner layer is formed and located upon the exposed conductor contact region in absence of an undesirable reactive environment.Type: GrantFiled: January 6, 2006Date of Patent: January 27, 2009Assignee: International Business Machines CorporationInventors: John A. Fitzsimmons, William J. Cote, Nancy A. Greco, Thomas H. Ivers, Steven Moskowitz
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Patent number: 7034400Abstract: A metallization insulating structure, having a substrate; a substantially fluorine free insulating layer formed on the substrate, having a height, hi; a fluorine containing insulating layer formed on the substantially fluorine free insulating layer, having a height hf.Type: GrantFiled: September 10, 2003Date of Patent: April 25, 2006Assignee: International Business Machines CorporationInventors: Edward P. Barth, Glenn A. Biery, Jeffrey P. Gambino, Thomas H. Ivers, Hyun K. Lee, Ernest N. Levine, Ann McDonald, Anthony K. Stamper
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Patent number: 6939797Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.Type: GrantFiled: November 12, 2003Date of Patent: September 6, 2005Assignee: International Business Machines CorporationInventors: Edward Barth, John A. Fitzsimmons, Stephen M. Gates, Thomas H. Ivers, Sarah L. Lane, Jia Lee, Ann McDonald, Vincent McGahay, Darryl D. Restaino
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Patent number: 6821890Abstract: Poorly adherent layers such as silicon nitride and silicon dioxide exhibit improved adhesion to copper member by providing an intervening germanium-containing layer. The germanium-containing layer is copper germanide, germanium oxide, germanium nitride or combinations thereof. The germanium-containing layer enhances the adhesion such that the poorly adherent layer is less susceptible to delamination from the copper member.Type: GrantFiled: May 7, 2001Date of Patent: November 23, 2004Assignee: International Business Machines CorporationInventors: Vincent J. McGahay, Thomas H. Ivers, Joyce C. Liu, Henry A. Nye, III
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Publication number: 20040173908Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.Type: ApplicationFiled: November 12, 2003Publication date: September 9, 2004Inventors: Edward Barth, John A. Fitzsimmons, Stephen M. Gates, Thomas H. Ivers, Sarah L. Lane, Jia Lee, Ann McDonald, Vincent McGahay, Darryl D. Restaino
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Patent number: 6737747Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.Type: GrantFiled: January 15, 2002Date of Patent: May 18, 2004Assignee: International Business Machines CorporationInventors: Edward Barth, John A. Fitzsimmons, Stephen M. Gates, Thomas H. Ivers, Sarah L. Lane, Jia Lee, Ann McDonald, Vincent McGahay, Darryl D. Restaino
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Publication number: 20040061235Abstract: A metallization insulating structure, havingType: ApplicationFiled: September 10, 2003Publication date: April 1, 2004Inventors: Edward P. Barth, Glenn A. Biery, Jeffrey P. Gambino, Thomas H. Ivers, Hyun K. Lee, Ernest N. Levine, Ann McDonald, Anthony K. Stamper
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Patent number: 6626188Abstract: The present invention relates generally to the field of semiconductor device manufacturing, and more specifically to a method for cleaning and preconditioning a dome in a chemical vapor deposition system. During cleaning, the direction of flow of cooling water through an induction coil in the dome is reversed. During preconditioning, the direction of cooling water flow is preferably reversed again, such that it is the same direction as during deposition. The preconditioning portion of the method comprises introducing a hydrogen gas into the CVD chamber, and then introducing a mixture of hydrogen gas and nitrogen gas into the chamber.Type: GrantFiled: June 28, 2001Date of Patent: September 30, 2003Assignee: International Business Machines CorporationInventors: John A. Fitzsimmons, Thomas H. Ivers, Pavel Smetana
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Publication number: 20030132510Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.Type: ApplicationFiled: January 15, 2002Publication date: July 17, 2003Applicant: International Business Machines CorporationInventors: Edward Barth, John A. Fitzsimmons, Stephen M. Gates, Thomas H. Ivers, Sarah L. Lane, Jia Lee, Ann McDonald, Vincent McGahay, Darryl D. Restaino
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Publication number: 20030000545Abstract: The present invention relates generally to the field of semiconductor device manufacturing, and more specifically to a method for cleaning and preconditioning a dome in a chemical vapor deposition system. During cleaning, the direction of flow of cooling water through an induction coil in the dome is reversed. During preconditioning, the direction of cooling water flow is preferably reversed again, such that it is the same direction as during deposition. The preconditioning portion of the method comprises introducing a hydrogen gas into the CVD chamber, and then introducing a mixture of hydrogen gas and nitrogen gas into the chamber.Type: ApplicationFiled: June 28, 2001Publication date: January 2, 2003Applicant: International Business Machines CorporationInventors: John A. Fitzsimmons, Thomas H. Ivers, Pavel Smetana
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Publication number: 20020076917Abstract: A metallization insulating structure, havingType: ApplicationFiled: December 20, 1999Publication date: June 20, 2002Inventors: EDWARD P BARTH, GLENN A BIERY, JEFFREY P GAMBINO, THOMAS H IVERS, HYUN K LEE, ERNEST N LEVINE, ANN MCDONALD, ANTHONY K STAMPER
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Publication number: 20010023987Abstract: Poorly adherent layers such as silicon nitride and silicon dioxide exhibit improved adhesion to copper member by providing an intervening germanium-containing layer. The germanium-containing layer is copper germanide, germanium oxide, germanium nitride or combinations thereof. The germanium-containing layer enhances the adhesion such that the poorly adherent layer is less susceptible to delamination from the copper member.Type: ApplicationFiled: May 7, 2001Publication date: September 27, 2001Inventors: Vincent J. Mcgahay, Thomas H. Ivers, Joyce Liu, Henry A. Nye
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Patent number: 6271595Abstract: Poorly adherent layers such as silicon nitride and silicon dioxide exhibit improved adhesion to copper member by providing an intervening germanium-containing layer. The germanium-containing layer is copper germanide, germanium oxide, germanium bitride or combinations thereof. The germanium-containing layer enhances the adhesion such that the poorly adherent layer is less susceptible to delamination from the copper member.Type: GrantFiled: January 14, 1999Date of Patent: August 7, 2001Assignee: International Business Machines CorporationInventors: Vincent J. McGahay, Thomas H. Ivers, Joyce C. Liu, Henry A. Nye, III
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Patent number: 6252295Abstract: The adhesion of a silicon carbide containing film to a surface is enhanced by employing a transition film of silicon nitride, silicon dioxide and/or silicon oxynitride.Type: GrantFiled: June 19, 2000Date of Patent: June 26, 2001Assignee: International Business Machines CorporationInventors: Donna R. Cote, Daniel C. Edelstein, John A. Fitzsimmons, Thomas H. Ivers, Paul C. Jamison, Ernest Levine