Abstract: A substrate is maintained beneath a substrate mounting surface with a retaining ring that includes a generally annular lower portion having a bottom surface for contacting the polishing surface during polishing, and a generally annular upper portion having a bottom surface joined to the lower portion and a top surface fixed to and abutting the base. The lower portion is made of a plastic and the upper lower portion is made of a metal which is more rigid than the plastic.

Abstract: Methods and compositions are provided for planarizing a substrate surface with reduced or minimal topographical defect formation during a polishing process for dielectric materials. In one aspect a method is provided for polishing a substrate containing two or more dielectric layers, such as silicon oxide, silicon nitride, silicon oxynitride, with at least one processing step using a fixed-abrasive polishing article as a polishing article. The processing steps may be used to remove all, substantially all, or a portion of the one or more dielectric layers, which may include removal of the topography, the bulk dielectric, or residual dielectric material of a dielectric layer in two or more steps.

Abstract: A platen having a patterned upper surface for supporting a polishing material in a chemical mechanical polishing system is provided. In one embodiment, a platen for supporting a polishing material in a chemical mechanical polishing system includes a body adapted to support a polishing material during processing and having a substantially rigid non-planar upper support surface for supporting the polishing material during polishing.

Abstract: A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of concentric circular grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.

Abstract: A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of concentric circular grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.

Abstract: A method and apparatus for measuring wear of the thickness of a chemical mechanical polishing pad are provided. The apparatus includes a chemical mechanical polishing pad having a plurality of reliefs in a main polishing surface for determining wear of the pad. In one aspect, the pad reliefs comprise through-holes in the pad or extend partially through a thickness of the pad. The method for measuring wear of the thickness of a chemical mechanical polishing pad includes providing a plurality of reliefs in a main polishing surface of the pad and measuring a distance from the main polishing surface to a bottom surface of each of a plurality of the reliefs.

Abstract: A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of concentric circular grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.

Abstract: Liquid material is precisely dispensed to a semiconductor processing tool utilizing closed loop control. In one embodiment, CMP slurry material of known density is supplied from a reservoir/mixing vessel to a dispense module. The dispense module also receives a flow of an inert gas through a gas supply valve. Positive pressure arising within the dispense module due to the inert gas flow causes an outflow of slurry from the dispense module to the CMP platen. The rate of flow of the slurry to the CMP platen over time is determined by monitoring the change (decline) in weight of the filled dispense module. In a similar manner, variation in the rate of flow of slurry over time may be detected by monitoring variation in changes in weight of the filled dispense module over time. A regulator structure in electronic communication with the dispense module and with the gas supply valve receives first signals at different time points indicating the weight change of the dispense module.

Abstract: A method and apparatus for measuring wear of the thickness of a chemical mechanical polishing pad are provided. The apparatus includes a chemical mechanical polishing pad having a plurality of reliefs in a main polishing surface for determining wear of the pad. In one aspect, the pad reliefs comprise through-holes in the pad or extend partially through a thickness of the pad. The method for measuring wear of the thickness of a chemical mechanical polishing pad includes providing a plurality of reliefs in a main polishing surface of the pad and measuring a distance from the main polishing surface to a bottom surface of each of a plurality of the reliefs.

Abstract: A pad conditioning assembly includes a conditioner head with an end effector movable into contact with a polishing pad,a plurality of downwardly-projecting movable conditioning elements disposed at a bottom of the end effector; and a compliant backing member disposed above and adjacent the conditioning elements, wherein forces applied by the compliant backing member are transferred to the movable conditioning elements to move the conditioning elements. In one aspect, a pressurization circuit applies a pressure from a pressure source to the compliant backing member to flex the compliant backing member against the movable conditioning elements.

Abstract: A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of concentric circular grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.

Abstract: Liquid material is precisely dispensed to a semiconductor processing tool utilizing closed loop control. In one embodiment, CMP slurry material of known density is supplied from a reservoir/mixing vessel to a dispense module. The dispense module also receives a flow of an inert gas through a gas supply valve. Positive pressure arising within the dispense module due to the inert gas flow causes an outflow of slurry from the dispense module to the CMP platen. The rate of flow of the slurry to the CMP platen over time is determined by monitoring the change (decline) in weight of the filled dispense module. In a similar manner, variation in the rate of flow of slurry over time may be detected by monitoring variation in changes in weight of the filled dispense module over time. A regulator structure in electronic communication with the dispense module and with the gas supply valve receives first signals at different time points indicating the weight change of the dispense module.

Abstract: Methods and compositions are provided for planarizing a substrate surface with reduced or minimal defects in surface topography. In one aspect, a method is provided for processing a substrate including positioning a substrate comprising at least first dielectric material and second dielectric material disposed thereon in a polishing apparatus, polishing the substrate with a first polishing composition having a first selectivity, and polishing the substrate with a second polishing composition having a second selectivity greater than the first selectivity.

Abstract: A polishing pad with a layer that provides a polishing surface. The layer has a thickness between about 0.06 and 0.12 inches, and a plurality of substantially circular grooves having a depth between about 0.02 and 0.05 inches are formed in the polishing surface.

Abstract: A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of concentric circular grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.

Abstract: A substrate is chemical mechanical polished first with a single layer hard polishing pad and a high-selectivity slurry until a first endpoint is reached, and then with a soft polishing pad and a low-selectivity slurry until a second endpoint is reached. Dishing is reduced when low-selectivity slurry is used at the second polishing step. Low Within-Wafer-Non-Uniformity is achieved by using a single layer hard pad at low pressure at the first polishing step.

Abstract: A multistep method of polishing a semiconductor substrate with a polishing fluid to remove a selected amount of material from the substrate. In one embodiment the method includes polishing the substrate to remove a first portion of the selected amount of material by holding the substrate against a polishing pad with a polishing force and applying a polishing solution to the polishing pad. Next the polishing pad is rinsed with a rinsing fluid, and afterwards the substrate is further polished to remove a second portion of the selected amount of material by holding the substrate against the polishing pad with a polishing force and applying the polishing fluid to the polishing pad.

Abstract: A utility wafer, more specifically, an utility wafer for simulating a workpiece in a semiconductor processing system. The utility wafer includes a first side, a second side and a peripheral edge wherein one or both edges of the peripheral edge are relieved to remove the otherwise sharp edge. In one embodiment, the peripheral edge is polished. The utility wafer is resistant to chipping, stress cracking and breakage when undergoing chemical mechanical planarization.

Abstract: A utility wafer, more specifically, an utility wafer for simulating a workpiece in a semiconductor processing system. The utility wafer includes a first side, a second side and a peripheral edge wherein one or both edges of the peripheral edge are relieved to remove the otherwise sharp edge. In one embodiment, the peripheral edge is polished. The utility wafer is resistant to chipping, stress cracking and breakage when undergoing chemical mechanical planarization.

Abstract: The present invention provides a method and apparatus for delivering one or more rinse agents to a surface, such as a polishing pad surface and preferably one or more polishing fluids. The invention also provides a method of cleaning one or more surfaces, such as a polishing pad surface and a substrate surface, by delivering a spray of one or more rinse agents to the surface and, preferably, causing the rinse agent to flow across the surface from a central region to an outer region where unwanted debris and material is collected.