Patents by Inventor Thomas Hörman

Thomas Hörman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of producing a semiconductor device of SiC
    Patent number: 6306773
    Abstract: The invention relates to a method for selective etching of SiC, the etching being carried out by applying a positive potential to a layer (3; 8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC. The invention also relates to a method for producing a SiC micro structure having free hanging parts (i.e. diaphragm, cantilever or beam) on a SiC-substrate, a method for producing a MEMS device of SiC having a free hanging structure, and a method for producing a piezo-resistive pressure sensor comprising the step of applying a positive potential to a layer (8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC.
    Type: Grant
    Filed: February 1, 2000
    Date of Patent: October 23, 2001
    Inventors: Christian Adås, Stefan Karlsson, Andrei Konstantinov, Christopher Harris, Thomas Hörman