Patents by Inventor Thomas Hauet

Thomas Hauet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8748018
    Abstract: A patterned perpendicular magnetic recording medium, such as a disk for use in hard disk drives, has a flux channeling layer (FCL) located below the recording layer (RL) in each of the discrete data islands. The disk includes a substrate, a soft underlayer (SUL) of soft magnetically permeable material on the substrate, and a nonmagnetic exchange break layer (EBL) on the SUL. A nonmagnetic separation layer (SL) is located between the FCL and the RL in the islands. The FCL has an anisotropy field substantially lower than the anisotropy field of the RL, and a magnetization equal to or higher than the magnetization of the RL. The FCL is saturated at a much lower field than the RL and thus channels the magnetic flux from the write head through the island positions. The dipolar fields from the RL above the FCL polarize the magnetization of the FCL parallel to the magnetization direction of the RL in the absence of an external field, to thereby enhance the readback signal.
    Type: Grant
    Filed: October 12, 2009
    Date of Patent: June 10, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Thomas Hauet, Olav Hellwig, Kentaro Takano
  • Patent number: 8163405
    Abstract: Multiple anisotropy layered magnetic structures for controlling reversal mechanism and tightening of switching field distribution in bit patterned media are disclosed. The invention extends the exchange spring concept to more variable and sophisticated structures. Three or more layers with different anisotropy or anisotropy gradients increase writeability gains beyond the simple hard/soft bilayer exchange spring concept for BPM. The structures have a thin very hard, high anisotropy center layer that acts as a threshold or pinning layer for domain wall propagation through the entire media structure. In addition or alternatively, a thin very soft, low anisotropy center layer in between the commonly used soft surface layer and hard media layer allows quick initial propagation of the domain wall into the center of the media structure. Various properties of the media structures can be tuned more independently for optimization if using more advanced multi-anisotropy layer stacks.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: April 24, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Thomas Hauet, Olav Hellwig, Manfred Ernst Schabes
  • Patent number: 8129043
    Abstract: Multilayer magnetic structures control the switching field and tighten the switching field distribution in bit patterned media. A strain-inducing layer is excited, e.g., by a localized magnetic field or a localized thermal heating or a voltage, and induces a strain on the magnetic layer(s) of the patterned bit to initiate switching of the bit magnetization. The strain induced on the magnetic layer forces a rotation or an amplitude variation of the magnetic layer anisotropy. A localized magnetic field is simultaneously or subsequently applied to complete the switching of the bit magnetization. The invention provides control of switching field and switching field distribution for bit-patterned media devices.
    Type: Grant
    Filed: April 14, 2009
    Date of Patent: March 6, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Thomas Hauet, Olav Hellwig, Lidu Huang
  • Publication number: 20110085264
    Abstract: A patterned perpendicular magnetic recording medium, such as a disk for use in hard disk drives, has a flux channeling layer (FCL) located below the recording layer (RL) in each of the discrete data islands. The disk includes a substrate, a soft underlayer (SUL) of soft magnetically permeable material on the substrate, and a nonmagnetic exchange break layer (EBL) on the SUL. A nonmagnetic separation layer (SL) is located between the FCL and the RL in the islands. The FCL has an anisotropy field substantially lower than the anisotropy field of the RL, and a magnetization equal to or higher than the magnetization of the RL. The FCL is saturated at a much lower field than the RL and thus channels the magnetic flux from the write head through the island positions. The dipolar fields from the RL above the FCL polarize the magnetization of the FCL parallel to the magnetization direction of the RL in the absence of an external field, to thereby enhance the readback signal.
    Type: Application
    Filed: October 12, 2009
    Publication date: April 14, 2011
    Applicant: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
    Inventors: Thomas Hauet, Olav Hellwig, Kentaro Takano
  • Publication number: 20100259846
    Abstract: Multilayer magnetic structures control the switching field and tighten the switching field distribution in bit patterned media. A strain-inducing layer is excited, e.g., by a localized magnetic field or a localized thermal heating or a voltage, and induces a strain on the magnetic layer(s) of the patterned bit to initiate switching of the bit magnetization. The strain induced on the magnetic layer forces a rotation or an amplitude variation of the magnetic layer anisotropy. A localized magnetic field is simultaneously or subsequently applied to complete the switching of the bit magnetization. The invention provides control of switching field and switching field distribution for bit-patterned media devices.
    Type: Application
    Filed: April 14, 2009
    Publication date: October 14, 2010
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Thomas Hauet, Olav Hellwig, Lidu Huang
  • Publication number: 20100247969
    Abstract: Multiple anisotropy layered magnetic structures for controlling reversal mechanism and tightening of switching field distribution in bit patterned media are disclosed. The invention extends the exchange spring concept to more variable and sophisticated structures. Three or more layers with different anisotropy or anisotropy gradients increase writeability gains beyond the simple hard/soft bilayer exchange spring concept for BPM. The structures have a thin very hard, high anisotropy center layer that acts as a threshold or pinning layer for domain wall propagation through the entire media structure. In addition or alternatively, a thin very soft, low anisotropy center layer in between the commonly used soft surface layer and hard media layer allows quick initial propagation of the domain wall into the center of the media structure. Various properties of the media structures can be tuned more independently for optimization if using more advanced multi-anisotropy layer stacks.
    Type: Application
    Filed: March 27, 2009
    Publication date: September 30, 2010
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Thomas Hauet, Olav Hellwig, Manfred Ernst Schabes