Abstract: Qubit circuits having components formed deep in a substrate are described. The qubit circuits can be manufactured using existing integrated-circuit technologies. By forming components such as superconducting current loops, inductive, and/or capacitive components deep in the substrate, the footprint of the qubit circuit integrated within the substrate can be reduced. Additionally, coupling efficiency to and from the qubit can be improved and losses in the qubit circuit may be reduced.

Abstract: Qubit circuits having components formed deep in a substrate are described. The qubit circuits can be manufactured using existing integrated-circuit technologies. By forming components such as superconducting current loops, inductive, and/or capacitive components deep in the substrate, the footprint of the qubit circuit integrated within the substrate can be reduced. Additionally, coupling efficiency to and from the qubit can be improved and losses in the qubit circuit may be reduced.

Abstract: Scalable quantum dot devices and methods are described. An example quantum dot device may comprise one or more repeated cells of a repeating quantum dot structure. The repeated cells may be arranged as a linear array of quantum dots. A single repeated cell may comprise a plurality of quantum dots. The repeated cells may be configured to cause movement of a single electron between adjacent quantum dots. A repeated cell may also comprise a charge sensor for readout of the plurality of quantum dots.

Abstract: A covering system that covers an end pipe of a chimney system. A portion of the end pipe protrudes from the roof of a house or building where the chimney system is located. The system comprises of at least two base supports that sit on the roof. A channel spanning around the end pipe of the chimney system that protrudes from the roof. The base supports are attached at the base of the channel. The base has a protruding section whose dimensions are larger than the channel. A collar covering having a first and a second opening. The collar covers the protruding section of the base by its first opening and receives the channel at its second opening. A crown top base that slides inside of the channel from the top.

Abstract: Scalable quantum dot devices and methods are described. An example quantum dot device may comprise one or more repeated cells of a repeating quantum dot structure. The repeated cells may be arranged as a linear array of quantum dots. A single repeated cell may comprise a plurality of quantum dots. The repeated cells may be configured to cause movement of a single electron between adjacent quantum dots. A repeated cell may also comprise a charge sensor for readout of the plurality of quantum dots.

Abstract: An exemplary quantum dot device can be provided, which can include, for example, at least three conductive layers and at least two insulating layers electrically insulating the at least three conductive layers from one another. For example, one of the conductive layers can be composed of a different material than the other two of the conductive layers. The conductive layers can be composed of (i) aluminum, (ii) gold, (iii) copper or (iv) polysilicon, and/or the at least three conductive layers can be composed at least partially of (i) aluminum, (ii) gold, (iii) copper or (iv) polysilicon. The insulating layers can be composed of (i) silicon oxide, (ii) silicon nitride and/or (iii) aluminum oxide.

Abstract: An exemplary quantum dot device can be provided, which can include, for example, at least three conductive layers and at least two insulating layers electrically insulating the at least three conductive layers from one another. For example, one of the conductive layers can be composed of a different material than the other two of the conductive layers. The conductive layers can be composed of (i) aluminum, (ii) gold, (iii) copper or (iv) polysilicon, and/or the at least three conductive layers can be composed at least partially of (i) aluminum, (ii) gold, (iii) copper or (iv) polysilicon. The insulating layers can be composed of (i) silicon oxide, (ii) silicon nitride and/or (iii) aluminum oxide.

Abstract: A covering system that covers an end pipe of a chimney system. A portion of the end pipe protrudes from the roof of a house or building where the chimney system is located. The system comprises of at least two base supports that sit on the roof. A channel spanning around the end pipe of the chimney system that protrudes from the roof. The base supports are attached at the base of the channel. The base has a protruding section whose dimensions are larger than the channel. A collar covering having a first and a second opening. The collar covers the protruding section of the base by its first opening and receives the channel at its second opening. A crown top base that slides inside of the channel from the top.