Abstract: An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B2Hx+, B5Hx+, B18Hx+, B18Hx+, P4+ or As4+, or monomer ions, such as Ge+, In+, Sb+, B+, As+, and P+, to enable cluster implants and monomer implants into silicon substrates for the purpose of manufacturing CMOS devices, and to do so with high productivity. The range of ion beams is generated by a universal ion source in accordance with the present invention which is configured to operate in two discrete modes: an electron impact mode, which efficiently produces ionized clusters, and an arc discharge mode, which efficiently produces monomer ions.

Abstract: A vapor delivery system for delivering a steady flow of sublimated vapor to a vacuum chamber comprises a vaporizer of solid material, a mechanical throttling valve, and a pressure gauge, followed by a vapor conduit to the vacuum chamber. The vapor flow rate is determined by both the temperature of the vaporizer and the setting of the conductance of the mechanical throttle valve located between the vaporizer and the vacuum chamber. The temperature of the vaporizer is determined by closed-loop control to a set-point temperature. The mechanical throttle valve is electrically controlled, e.g. the valve position is under closed-loop control to the output of the pressure gauge. In this way the vapor flow rate can be generally proportional to the pressure gauge output. All surfaces exposed to the vapor from the vaporizer to the vacuum chamber are heated to prevent condensation. A gate valve and a rotary butterfly valve are shown acting as the upstream throttling valve.

Abstract: An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B2Hx+, B5Hx+, B10Hx+, B18Hx+, P4+ or As4+? or monomer ions, such as Ge+, In+, Sb+, B+, As+, and P+, to enable cluster implants and monomer implants into silicon substrates for the purpose of manufacturing CMOS devices, and to do so with high productivity. The range of ion beams is generated by a universal ion source in accordance with the present invention which is configured to operate in two discrete modes: an electron impact mode, which efficiently produces ionized clusters, and an arc discharge mode, which efficiently produces monomer ions.

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g.

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g.

Abstract: The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources.

Abstract: The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases (F or Cl), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources.

Abstract: An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. The molecular cluster ions have the chemical form BnHx+and BnHx?, where 10<n<100 and 0?x?n+4. The use of such boron hydride clusters results in a dramatic increase in wafer throughput, as well as improved device yields through the reduction of wafer charging. A method of manufacturing a semiconductor device is further described, comprising the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate.

Abstract: An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. The molecular cluster ions have the chemical form BnHx+ and BnHx?, where 10<n<100 and 0?x?n+4. The use of such boron hydride clusters results in a dramatic increase in wafer throughput, as well as improved device yields through the reduction of wafer charging. A method of manufacturing a semiconductor device is further described, comprising the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate.

Abstract: An ion implantation is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm?3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target surface and the ions of the transported ion beam are implanted into the target.

Abstract: An ion implantation is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm?3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target surface and the ions of the transported ion beam are implanted into the target.

Abstract: An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B2Hx+, B5Hx+, B10Hx+, B18Hx+, P4+ or As4+ or monomer ions, such as Ge+, In+, Sb+, B+, As+, and P+, to enable cluster implants and monomer implants into silicon substrates for the purpose of manufacturing CMOS devices, and to do so with high productivity. The range of ion beams is generated by a universal ion source in accordance with the present invention which is configured to operate in two discrete modes: an electron impact mode, which efficiently produces ionized clusters, and an arc discharge mode, which efficiently produces monomer ions.

Abstract: A process is disclosed which incorporates implantation of a carbon cluster into a substrate to improve the characteristics of transistor junctions when the substrates are doped with Boron and Phosphorous in the manufacturing of PMOS transistor structures in integrated circuits. There are two processes which result from this novel approach: (1) diffusion control for USJ formation; and (2) high dose carbon implantation for stress engineering. Diffusion control for USJ formation is demonstrated in conjunction with a boron or shallow boron cluster implant of the source/drain structures in PMOS. More particularly, first, a cluster carbon ion, such as C16Hx+, is implanted into the source/drain region at approximately the same dose as the subsequent boron implant; followed by a shallow boron, boron cluster, phosphorous or phosphorous cluster ion implant to form the source/drain extensions, preferably using a borohydride cluster, such as B18Hx+ or B10Hx+.

Abstract: Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics.

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using, a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump;.

Abstract: An ion source for an ion implantation system includes a vaporizer for producing a process gas; an electron source for generating an electron beam to ionize the process gas within a ionization chamber. The ionization chamber includes an extraction aperture for extracting an ion beam. The ion source, in accordance with the preset invention, is configured to be able to be retrofit into the design space of existing ion sources in, for example, Bernas source-based ion implanters.

Abstract: A method of manufacturing a semiconductor device is described, wherein clusters of N- and P-type dopants are implanted to form the transistor structures in CMOS devices. For example, As4Hx+clusters and either B10Hx? or B10Hx+ clusters are used as sources of As and B doping, respectively, during the implants. An ion implantation system is described for the implantation of cluster ions into semiconductor substrates for semiconductor device manufacturing. A method of producing higher-order cluster ions of As, P, and B is presented, and a novel electron-impact ion source is described which favors the formation of cluster ions of both positive and negative charge states. The use of cluster ion implantation, and even more so the implantation of negative cluster ions, can significantly reduce or eliminate wafer charging, thus increasing device yields.

Abstract: Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics.

Abstract: Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics.

Abstract: An ion source is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm?3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target sure and the ions of the transported ion beam are implanted into the target.