Abstract: A method for pretreating a copper surface for the subsequent formation of a firmly adhesive bond between the copper surface and a plastic material substrate. The method comprises bringing a copper surface into contact with: a) hydrogen peroxide; b) an acid; c) a nitrogen-containing, five-membered, heterocyclic compound; and d) a lactam, amide, or polyamide, connected at one or more of its nitrogen atoms with at least one residue of formula (I), wherein: n is an integer from 1 to 100; R1 is hydrogen or a hydrocarbon residue with 1 to 6 carbon atoms; R2 is hydrogen or a hydrocarbon residue with 1 to 6 carbon atoms; and each R1 and R2 in a —(CHR1—CHR2—O)— moiety is selected independently of each R1 and R2 in another —(CHR1—CHR2—O)— moiety.

Abstract: A chuck for aligning a first planar substrate in parallel to a second planar substrate includes a top plate having a top surface for arrangement of the first planar substrate. A bottom plate is at least one distance measuring sensor configured to measure a distance between the top surface of the top plate and a surface of the second planar substrate, and at least three linear actuators in contact with the top plate and the bottom plate. The method for setting a gap between the first and second planar substrate includes measuring the thickness of the first planar substrate and measuring between a surface of the second planar substrate and the top surface of the top plate. The tilt adjusts between a top surface of the first planar substrate or the chuck and the surface of the second planar substrate by using at least three linear actuators of the chuck.

Abstract: A method for pretreating a copper surface for the subsequent formation of a firmly adhesive bond between the copper surface and a plastic material substrate. The method comprises bringing a copper surface into contact with: a) hydrogen peroxide; b) an acid; c) a nitrogen-containing, five-membered, heterocyclic compound; and d) a lactam, amide, or polyamide, connected at one or more of its nitrogen atoms with at least one residue of formula (I), wherein: n is an integer from 1 to 100; R1 is hydrogen or a hydrocarbon residue with 1 to 6 carbon atoms; R2 is hydrogen or a hydrocarbon residue with 1 to 6 carbon atoms; and each R1 and R2 in a —(CHR1—CHR2—O)— moiety is selected independently of each R1 and R2 in another —(CHR1—CHR2—O)— moiety.

Abstract: The invention concerns a solution for pretreating copper surfaces, and a method for pre-treating copper surfaces allowing the formation of a tight bond to plastic substrates. The solution comprises: a) hydrogen peroxide, b) at least one acid, and c) at least one nitrogen-containing, five-membered, heterocyclic compound, and d) additionally at least one nitrogen containing, adhesion-promoting compound, said compound comprising, or consisting of, lactams, non-quaternary fatty amines, amides and polyamides, connected at one or more of its nitrogen atoms with at least one residue of formula (I).

Abstract: The chuck for aligning a first planar substrate, e.g., a wafer, in parallel to a second planar substrate, e.g. a mask, comprises: a top plate having a top surface for arrangement of the first planar substrate, a bottom plate, at least one distance measuring sensor configured to measure a distance between the top surface of the top plate and a surface of the second planar substrate, and at least three linear actuators in contact with the top plate and the bottom plate. The method for setting a gap between a first planar substrate, e.g. a wafer, on a top plate of a chuck, and a second planar substrate, e.g.

Abstract: The present invention relates to a method for increasing the adhesion of organic resist materials on copper or copper alloy surfaces. The copper or copper alloy surface is contacted with an aqueous adhesion promoting solution comprising at least one organic acid, a peroxide compound and optionally one or more substances selected from the group consisting of urea, derivatives thereof and water-soluble polymers.

Abstract: The invention concerns a solution for pretreating copper surfaces, and a method for pre-treating copper surfaces allowing the formation of a tight bond to plastic substrates. The solution comprises: a) hydrogen peroxide, b) at least one acid, and c) at least one nitrogen-containing, five-membered, heterocyclic compound, and d) additionally at least one nitrogen containing, adhesion-promoting compound, said compound comprising, or consisting of, lactams, non-quaternary fatty amines, amides and polyamides, connected at one or more of its nitrogen atoms with at least one residue of formula (I).

Abstract: The present invention relates to a process for manufacture of multilayer printed circuit boards and articles formed thereby, especially IC substrates. The inventive process utilizes in individual process steps inorganic silicates and organosilane bonding mixtures to provide adhesion between layers of copper and dielectric materials. Said process leads to an enhanced adhesive strength, improved mechanical and thermal stress resistance as well as humidity resistance of multilayer printed circuit boards and IC substrates.

Abstract: The present invention provides an apparatus for the testing of semiconductor structures. The apparatus is provided with a chuck for holding a semiconductor wafer and with needle holders for contact needles, the chuck being provided with a fastening device for the semiconductor wafer and being movable for positioning, controlled using a positioning device, in relation to the contact needles. The object of the present invention is to detect faults, in good time and reliably, of non-serviceable or not fully serviceable chips before separation to avoid unnecessary work for separating and assembling defective chips. The object is attained in that the chuck has a receiving area exposing upwards a lower surface of the semiconductor wafer and a receiving plane therefor. The receiving plane is arranged above the needle carrier, and the contact needles point upwards in such a manner that they contact contact islands of the semiconductor chips on the downwardly directed upper surface of the semiconductor wafer.