Patents by Inventor Thomas Igel-Holtzendorff

Thomas Igel-Holtzendorff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10957685
    Abstract: A semiconductor device and method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a semiconductor layer located on the substrate; at least one shallow trench and at least one deep trench. Each of the at least one shallow trench and the at least one deep trench extending from a first major surface of the semiconductor layer. Sidewall regions and base regions of the trenches comprise a doped trench region and the trenches are at least partially filled with a conductive material contacting the doped region. The shallow trenches terminate in the semiconductor layer and the deep trench terminates in the semiconductor substrate.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: March 23, 2021
    Assignee: Nexperia B.V.
    Inventors: Steffen Holland, Zhihao Pan, Jochen Wynants, Hans-Martin Ritter, Tobias Sprogies, Thomas Igel-Holtzendorff, Wolfgang Schnitt, Joachim Utzig
  • Patent number: 10056459
    Abstract: A semiconductor arrangement comprising a substrate having a first trench formed therein, a field plate layer arranged to extend within the first trench and coat the first trench, the field plate layer having a thickness such that it defines a second trench within the first trench, a barrier layer arranged to coat an internal surface of the second trench; and a trench fill material configured to substantially planarize the first and second trenches.
    Type: Grant
    Filed: October 9, 2015
    Date of Patent: August 21, 2018
    Assignee: Nexperia B.V.
    Inventors: Thomas Igel-Holtzendorff, Reza Behtash, Tim Boettcher
  • Patent number: 9911816
    Abstract: A semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, extending from the first surface into the first semiconductive layer, and having an active trench width, and a plurality of active cells; and a termination region at a periphery of the first surface comprising: at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than a width of the active cells, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body.
    Type: Grant
    Filed: April 22, 2015
    Date of Patent: March 6, 2018
    Assignee: Nexperia B.V.
    Inventors: Tim Boettcher, Reza Behtash, Thomas Igel-Holtzendorff, Linpei Zhu
  • Patent number: 9735290
    Abstract: An integrated diode (100) comprising a substrate (102); a Schottky cell (104) on the substrate (102); a heterojunction cell (106) on the substrate (102); a common anode contact (108) for both the Schottky cell (104) and the heterojunction cell (106); and a common cathode contact (110) for both the Schottky cell (104) and the heterojunction cell (106).
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: August 15, 2017
    Assignee: Nexperia B.V.
    Inventors: Tim Boettcher, Jan Philipp Fischer, Thomas Igel-Holtzendorff
  • Publication number: 20160225918
    Abstract: An integrated diode (100) comprising a substrate (102); a Schottky cell (104) on the substrate (102); a heterojunction cell (106) on the substrate (102); a common anode contact (108) for both the Schottky cell (104) and the heterojunction cell (106); and a common cathode contact (110) for both the Schottky cell (104) and the heterojunction cell (106).
    Type: Application
    Filed: December 30, 2015
    Publication date: August 4, 2016
    Inventors: Tim Boettcher, Jan Philipp Fischer, Thomas Igel-Holtzendorff
  • Publication number: 20160172451
    Abstract: A semiconductor arrangement comprising a substrate having a first trench formed therein, a field plate layer arranged to extend within the first trench and coat the first trench, the field plate layer having a thickness such that it defines a second trench within the first trench, a barrier layer arranged to coat an internal surface of the second trench; and a trench fill material configured to substantially planarize the first and second trenches.
    Type: Application
    Filed: October 9, 2015
    Publication date: June 16, 2016
    Inventors: Thomas Igel-Holtzendorff, Reza Behtash, Tim Boettcher
  • Publication number: 20150333133
    Abstract: The disclosure relates to a semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, the plurality of active trenches extending from the first surface into the first semiconductive layer and having an active trench width, and a plurality of active cells, each active cell provided in the first semiconductive layer adjacent to an active trench, the active cells having an active cell width; and a termination region at a periphery of the first surface comprising: at least one termination trench, the at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than the active cell width, wherein the active trenches and the at least one
    Type: Application
    Filed: April 22, 2015
    Publication date: November 19, 2015
    Inventors: Tim Boettcher, Reza Behtash, Thomas Igel-Holtzendorff, Linpei Zhu