Abstract: Methods for forming conductor contacts provide for etching through a capping layer located upon a conductor contact region within a substrate. A first pair of methods provide for etching through at least a lower thickness of the capping layer with other than a reactive ion etch to provide an exposed conductor contact region. A partially overlapping second pair of methods provides for converting at least an upper thickness of the capping layer to a converted material layer that is removed incident to providing an exposed conductor contact region. As adjunct to any of the methods, a liner layer is formed and located upon the exposed conductor contact region in absence of an undesirable reactive environment.

Abstract: A control system for a light-generating apparatus can include a control cyclically operating a switching element in series with the circuit including the apparatus's power source and light. Upon actuation of the apparatus's switch within a specified switching interval, the control shifts to a drift mode causing the circuit to automatically pass through consecutive excitation states such that the light passes through successive levels of preferably increasing intensity at a rate independent of the switching interval over an adjustment interval of momentarily indefinite duration. Another switch actuation shifts to set mode, which stops the light at a desired intensity. The drift and set operations are repeatable. An indicator preferably enables the operator to adjust the light's intensity based on the available remaining life of the power source as differently determined for each different intensity.

Abstract: A method of depositing a film on a substrate, comprising placing the substrate in the presence of plasma energy, and contacting the substrate with a reactive gas component comprising a compound of the formula (R—NH)4−nSiXn, wherein R is an alkyl group, n is 1, 2, or 3, and X is selected from hydrogen or the halogens. The reactive gas composition may further comprise an oxidizer and/or a reducing agent.

Abstract: A method of depositing a film on a substrate, comprising placing the substrate in the presence of plasma energy, and contacting the substrate with a reactive gas component comprising a compound of the formula (R—NH)4−nSiXn, wherein R is an alkyl group, n is 1, 2, or 3, and X is selected from hydrogen or the halogens. The reactive gas composition may further comprise an oxidizer and/or a reducing agent.

Abstract: A method is described for filling a high-aspect-ratio feature, in which compatible deposition and etching steps are performed in a sequence. The feature is formed as an opening in a substrate having a surface; a fill material is deposited at the bottom of the feature and on the surface of the substrate; deposition on the surface adjacent the feature causes formation of an overhang structure partially blocking the opening. The fill material is then reacted with a reactant to form a solid reaction product having a greater specific volume than the fill material. The overhang structure is thus converted into a reaction product structure blocking the opening. The reaction product (including the reaction product structure) is then desorbed, thereby exposing unreacted fill material at the bottom of the feature. The depositing and reacting steps may be repeated, with a final depositing step to fill the feature. Each sequence of depositing, reacting and desorbing reduces the aspect ratio of the feature.