Patents by Inventor Thomas J. Donahue

Thomas J. Donahue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6523417
    Abstract: An end of line seat tester for adjustable seats, comprising an array of optical sensors for sensing and measuring the physical adjustment of seat components such as a headrest, seatback or seat cushion. In a preferred form the optical sensor array is combined in closed-loop fashion with an internal function tester connected through a powered seat control module by tether to monitor the internal function of the power adjustment mechanisms. The external, optical sensing of the seat adjustments can be used to verify the internal testing of the seat adjustment mechanisms, both as to static adjusted positions and real time adjustment motion.
    Type: Grant
    Filed: August 17, 1999
    Date of Patent: February 25, 2003
    Assignee: Electrical Power & Design, Inc.
    Inventors: Thomas J. Donahue, Duane S. Pohlman, Lisa M. Bonza, Ian R. Dunn
  • Patent number: 5014222
    Abstract: In a distributed data processing system having a plurality of terminals or workstations, and providing the ability for users at terminals to access complex graphic images from a mainframe host and manipulate them at their terminals for inclusion into their own works, a method is provided for manipulating elements of an image too complex or detailed to be displayed in their entirety on a terminal. Demarkation may be performed at one portion of the image, and may be completed in another portion of the image in which the first portion is off screen.
    Type: Grant
    Filed: June 30, 1989
    Date of Patent: May 7, 1991
    Assignee: Bull HN Information Systems Inc.
    Inventor: Thomas J. Donahue
  • Patent number: 4579609
    Abstract: A method and apparatus for low temperature deposition of epitaxial films using low pressure chemical vapor deposition (CVD) with and without plasma enhancement. More specifically, the process enables CVD of epitaxial silicon at temperatures below 800.degree. C. by use of an in situ argon plasma sputter cleaning treatment of the silicon substrate prior to deposition.
    Type: Grant
    Filed: June 8, 1984
    Date of Patent: April 1, 1986
    Assignee: Massachusetts Institute of Technology
    Inventors: L. Rafael Reif, Thomas J. Donahue, Wayne R. Burger