Patents by Inventor Thomas J. Dunbar
Thomas J. Dunbar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20150244345Abstract: Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter.Type: ApplicationFiled: April 30, 2015Publication date: August 27, 2015Inventors: James W. ADKISSON, Panglijen CANDRA, Thomas J. DUNBAR, Mark D. JAFFE, Robert K. LEIDY, Anthony K. STAMPER
-
Patent number: 9099982Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are provided herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a fixed electrode with a plurality of fingers on the piezoelectric substrate. The method further includes forming a moveable electrode with a plurality of fingers over the piezoelectric substrate. The method further includes forming actuators aligned with one or more of the plurality of fingers of the moveable electrode.Type: GrantFiled: January 25, 2012Date of Patent: August 4, 2015Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Jeffrey P. Gambino, Mark D. Jaffe, Anthony K. Stamper, Randy L. Wolf
-
Patent number: 9058455Abstract: A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.Type: GrantFiled: January 20, 2012Date of Patent: June 16, 2015Assignee: International Business Machines CorporationInventors: James W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Jeffrey P. Gambino, Mark D. Jaffe, Anthony K. Stamper, Randy L. Wolf
-
Patent number: 9054671Abstract: Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter.Type: GrantFiled: November 9, 2011Date of Patent: June 9, 2015Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Mark D. Jaffe, Robert K. Leidy, Anthony K. Stamper
-
Patent number: 9048809Abstract: Switchable and/or tunable filters and methods of manufacture. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.Type: GrantFiled: January 3, 2012Date of Patent: June 2, 2015Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Jeffrey P. Gambino, Mark D. Jaffe, Anthony K. Stamper, Randy L. Wolf
-
Publication number: 20150054094Abstract: A method includes forming a hardmask over one or more gate structures. The method further includes forming a photoresist over the hardmask. The method further includes forming an opening in the photoresist over at least one of the gate structures. The method further includes stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further includes removing the photoresist. The method further includes providing a halo implant on a side of the least one of the at least one of the gate structures.Type: ApplicationFiled: October 3, 2014Publication date: February 26, 2015Inventors: Darshana N. BHAGAT, Thomas J. DUNBAR, Yen L. LIM, Jed H. RANKIN, Eva S. HOLMES
-
Patent number: 8957405Abstract: Manufacturing a semiconductor structure including: forming a seed material on a sidewall of a mandrel; forming a graphene field effect transistor (FET) on the seed material; and removing the seed material.Type: GrantFiled: November 11, 2013Date of Patent: February 17, 2015Assignee: International Business Machines CorporationInventors: James W. Adkisson, Thomas J. Dunbar, Jeffrey P. Gambino, Molly J. Leitch
-
Publication number: 20150042418Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.Type: ApplicationFiled: October 24, 2014Publication date: February 12, 2015Inventors: James W. ADKISSON, Panglijen CANDRA, Thomas J. DUNBAR, Jeffrey P. GAMBINO, Mark D. JAFFE, Anthony K. STAMPER, Randy L. WOLF
-
Patent number: 8910355Abstract: Manufacturing a semiconductor structure including modifying a frequency of a Film Bulk Acoustic Resonator (FBAR) device though a vent hole of a sealing layer surrounding the FBAR device.Type: GrantFiled: December 12, 2011Date of Patent: December 16, 2014Assignee: International Business Machines CorporationInventors: James W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Jeffrey P. Gambino, Mark D. Jaffe, Anthony K. Stamper, Randy L. Wolf
-
Patent number: 8877596Abstract: a method comprises forming a hardmask over one or more gate structures. The method further comprises forming a photoresist over the hardmask. The method further comprises forming an opening in the photoresist over at least one of the gate structures. The method further comprises stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further comprises removing the photoresist. The method further comprises providing a halo implant on a side of the at least one of the gate structures.Type: GrantFiled: June 24, 2010Date of Patent: November 4, 2014Assignee: International Business Machines CorporationInventors: Darshana N. Bhagat, Thomas J. Dunbar, Yen Li Lim, Jed H. Rankin, Eva A. Shah
-
Publication number: 20140131661Abstract: Manufacturing a semiconductor structure including: forming a seed material on a sidewall of a mandrel; forming a graphene field effect transistor (FET) on the seed material; and removing the seed material.Type: ApplicationFiled: November 11, 2013Publication date: May 15, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James W. ADKISSON, Thomas J. DUNBAR, Jeffrey P. GAMBINO, Molly J. LEITCH
-
Patent number: 8723392Abstract: Disclosed herein is a surface acoustic wave (SAW) filter and method of making the same. The SAW filter includes a piezoelectric substrate; a planar barrier layer disposed above the piezoelectric substrate, and at least one conductor buried in the piezoelectric substrate and the planar barrier layer.Type: GrantFiled: July 15, 2011Date of Patent: May 13, 2014Assignee: International Business Machines CorporationInventors: James W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Jeffrey P. Gambino, Mark D. Jaffe, Anthony K. Stamper, Randy L. Wolf
-
Patent number: 8691690Abstract: Disclosed are embodiments of a contact formation technique that incorporates a preventative etch step to reduce interlayer dielectric material flaking (e.g., borophosphosilicate glass (BPSG) flaking) and, thereby to reduce surface defects. Specifically, contact openings, which extend through a dielectric layer to semiconductor devices in and/or on a center portion of a substrate, can be filled with a conductor layer deposited by chemical vapor deposition (CVD). Chemical mechanical polishing (CMP) of the conductor layer can be performed to complete the contact structures. However, before the CMP process is performed (e.g., either before the contact openings are ever formed or before the contact openings are filled), a preventative etch process can be performed to remove any dielectric material from above the edge portion of the substrate. Removing the dielectric material from above the edge portion of the substrate prior to CMP reduces the occurrence of surface defects caused by dielectric material flaking.Type: GrantFiled: September 13, 2010Date of Patent: April 8, 2014Assignee: International Business Machines CorporationInventors: Yoba Amoah, Brian M. Czabaj, Thomas J. Dunbar, Jeffrey P. Gambino, Molly J. Leitch, Polina A. Razina
-
Patent number: 8673683Abstract: Manufacturing a semiconductor structure including: forming a seed material on an insulator layer; forming a graphene field effect transistor (FET) on the seed material; and forming an air gap under the graphene FET by removing the seed material.Type: GrantFiled: June 8, 2012Date of Patent: March 18, 2014Assignee: International Business Machines CorporationInventors: James W. Adkisson, Thomas J. Dunbar, Jeffrey P. Gambino, Molly J. Leitch, Edward J. Nowak
-
Patent number: 8633055Abstract: Manufacturing a semiconductor structure including: forming a seed material on a sidewall of a mandrel; forming a graphene field effect transistor (FET) on the seed material; and removing the seed material.Type: GrantFiled: December 13, 2011Date of Patent: January 21, 2014Assignee: International Business Machines CorporationInventors: James W. Adkisson, Thomas J. Dunbar, Jeffrey P. Gambino, Molly J. Leitch
-
Publication number: 20130214877Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.Type: ApplicationFiled: February 21, 2012Publication date: August 22, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James W. ADKISSON, Panglijen CANDRA, Thomas J. DUNBAR, Mark D. JAFFE, Anthony K. STAMPER, Randy L. WOLF
-
Publication number: 20130187729Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a fixed electrode with a plurality of fingers on the piezoelectric substrate. The method further includes forming a moveable electrode with a plurality of fingers over the piezoelectric substrate. The method further includes forming actuators aligned with one or more of the plurality of fingers of the moveable electrode.Type: ApplicationFiled: January 25, 2012Publication date: July 25, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James W. ADKISSON, Panglijen CANDRA, Thomas J. DUNBAR, Jeffrey P. GAMBINO, Mark D. JAFFE, Anthony K. STAMPER, Randy L. WOLF
-
Publication number: 20130187246Abstract: A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.Type: ApplicationFiled: January 20, 2012Publication date: July 25, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James W. ADKISSON, Panglijen CANDRA, Thomas J. DUNBAR, Jeffrey P. GAMBINO, Mark D. JAFFE, Anthony K. STAMPER, Randy L. WOLF
-
Publication number: 20130169383Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.Type: ApplicationFiled: January 3, 2012Publication date: July 4, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James W. ADKISSON, Panglijen CANDRA, Thomas J. DUNBAR, Jeffrey P. GAMBINO, Mark D. JAFFE, Anthony K. STAMPER, Randy L. WOLF
-
Publication number: 20130147319Abstract: Manufacturing a semiconductor structure including modifying a frequency of a Film Bulk Acoustic Resonator (FBAR) device though a vent hole of a sealing layer surrounding the FBAR device.Type: ApplicationFiled: December 12, 2011Publication date: June 13, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James W. ADKISSON, Panglijen CANDRA, Thomas J. DUNBAR, Jeffrey P. GAMBINO, Mark D. JAFFE, Anthony K. STAMPER, Randy L. WOLF