Abstract: A filter rod used in manufacture of a smoking article contains: (a) a rod of filter material, and (b) a plug wrap surrounding the rod of filter material. The overlapping side edges of the plug wrap are secured together with a plug wrap adhesive and the plug wrap adhesive comprises a disintegration accelerating agent. Alternatively or in addition, the plug wrap may contain perforations.

Abstract: A filter rod used in manufacture of a smoking article contains: (a) a rod of filter material, and (b) a plug wrap surrounding the rod of filter material. The overlapping side edges of the plug wrap are secured together with a plug wrap adhesive and the plug wrap adhesive comprises a disintegration accelerating agent. Alternatively or in addition, the plug wrap may contain perforations.

Abstract: A filter rod used in manufacture of a smoking article contains: (a) a rod of filter material, and (b) a plug wrap surrounding the rod of filter material. The overlapping side edges of the plug wrap are secured together with a plug wrap adhesive and the plug wrap adhesive comprises a disintegration accelerating agent. Alternatively or in addition, the plug wrap may contain perforations.

Abstract: A filter rod used in manufacture of a smoking article contains: (a) a rod of filter material, and (b) a plug wrap surrounding the rod of filter material. The overlapping side edges of the plug wrap are secured together with a plug wrap adhesive and the plug wrap adhesive comprises a disintegration accelerating agent. Alternatively or in addition, the plug wrap may contain perforations.

Abstract: A filter rod used in manufacture of a smoking article contains: (a) a rod of filter material, and (b) a plug wrap surrounding the rod of filter material. The overlapping side edges of the plug wrap are secured together with a plug wrap adhesive and the plug wrap adhesive comprises a disintegration accelerating agent. Alternatively or in addition, the plug wrap may contain perforations.

Abstract: A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.

Abstract: A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.

Abstract: A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.

Abstract: A method and apparatus for electron beam processing using an electron beam activated gas to etch or deposit material. The invention is particularly suitable for repairing defects in lithography masks. By using an electron beam in place of an ion beam, the many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch the substrate. In one embodiment, xenon difluoride gas is activated by the electron beam to etch a tungsten, tantalum nitride, or molybdenum silicide film on a transmission or reflection mask. To prevent spontaneous etching by the etchant gas in processed sites at which the passivation layer was removed, processed sites can be re-passivated before processing additional sites.

Abstract: A method and apparatus for electron beam processing using an electron beam activated gas to etch or deposit material. The invention is particularly suitable for repairing defects in lithography masks. By using an electron beam in place of an ion beam, the many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch the substrate. In one embodiment, xenon difluoride gas is activated by the electron beam to etch a tungsten, tantalum nitride, or molybdenum silicide film on a transmission or reflection mask. To prevent spontaneous etching by the etchant gas in processed sites at which the passivation layer was removed, processed sites can be re-passivated before processing additional sites.