Abstract: A lighter than air emergency beacon platform as part of a hydrogen generation and filtration apparatus includes at least one power source having at least one activation switch. At least one reaction chamber is electrically connected to the at least one reaction chamber by at least one low-resistance electrical conductor. The reaction chamber is configured to house a hydrogen generating material. At least one flow disruption chamber is in fluid communication with the reaction chamber. The flow disruption chamber(s) are configured to provide fluid communication with the next flow disruption chamber in the direction of fluid flow. At least one inflatable housing is configured to carry payload and is in fluid communication with the flow disruption chambers. The inflatable housing is detached from a fill tube to lift the payload above terrain blocking line-of-sight signal communication.

Abstract: 3,3,7,7-Tetrakis(difluoramino)octahydro-1,5-diazocinium intermediate salts through difluoramination followed by N-denosylation or N-deprotection, which are valuable for use as precursor(s) to HNFX as well as to other members of the rare class of 3,3,7,7-tetrakis(difluoramino)octahydro-1,5-diazocines.

Abstract: A fuel cell and a method for chemically storing hydrogen. Embodiments of the fuel cell include a mixture having at least one boron-nitrogen-hydrogen compound and a reactive hydride where the mixture has more than about 10 wt % hydrogen density and a hydrogen storage density of about 0.1 kg H21?1.

Abstract: A novel reaction scheme is presented for making a 3,3,7,7-tetrakis(difluoramino)octahydro-1,5-diazocinium salt, such as HNFX, from a tetrahydro-1,5-diazocine-3,7(2H,6H)-dione that does not employ N-nitrolysis,—but that instead requires protolytic N-deprotection, or protolytic denosylation, (i.e., the nosyl N-protecting group is replaced with protons, forming the corresponding protonated amine or ammonium derivative). In summary, the present method subjects a suitably N-protected dione to difluoramination followed by protolytic N-deprotection by addition of a superacid and subsequent nitration utilizing an electrophilic nitrating agent to yield the diazocinium salt.

Abstract: 3,3,7,7-Tetrakis(difluoramino)octahydro-1,5-diazocinium intermediate salts and method for making the salts, through difluoramination followed by N-denosylation or N-deprotection, which are valuable for use as precursor(s) to HNFX as well as to other members of the rare class of 3,3,7,7-tetrakis(difluoramino)octahydro-1,5-diazocines.

Abstract: A method of making films surface imprinted with nanometer-sized particles to produce micro- and/or nano-structured electron and hole collecting interfaces, include providing at least one transparent substrate, providing at least one photoabsorbing conjugated polymer, providing a sufficient amount of nanometer-sized particles to produce a charge separation interface, providing at least one transparent polymerizable layer, embedding the nanometer-sized particles in the conjugated polymer, applying the polymerizable layer and the conjugated polymer/nanometer-sized particle mixture on separate substrates where the nanometer-sized particles form a stamp surface, imprinting the stamp surface into the surface of the polymerizable film layer to produce micro- and/or nano-structured electron and hole collecting interfaces, polymerizing the polymerizable film layer to form a conformal gap, and filling the gap with at least one photoabsorbing material to promote the generation of photoexcited electrons and transport to

Abstract: A film surface imprinted with nanometer-sized particles to produce micro- and/or nano-structured electron and hole collecting interfaces, including: at least one substrate; at least one photoabsorbing conjugated polymer (including polybutylthiophene (pbT)) applied on a substrate, nanometer-sized particles including multiwalled carbon nanotubes (MWNT) to produce a charge separation interface; at least one transparent polymerizable layer, wherein the MWNT are embedded in the conjugated polymer to produce mixture and applied on a substrate to form a MWNT bearing surface film layer to form a stamp surface which is imprinted into the surface of the polymerizable film layer to produce micro- and/or nano-structured electron and hole collecting interfaces; polymerizing the polymerizable film layer to form a conformal gap between the MWNT stamp surface and the surface of the polymerizable film layer, and filling the gap with a photoabsorbing material to promote the generation of photoexcited electrons and transport to

Abstract: A new compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound, which has the formula ((CH.sub.3).sub.3 C) ((CH.sub.3).sub.2 N).sub.2 P. The process has the steps of: (1) reacting phosphorus trihalide, PX.sub.3, with tertiarybutyl Grignard reagent, ((CH.sub.3).sub.3 C)MgX, where X is a halide; (2) treating the resulting product with lithium dimethylamide, LiN(CH.sub.3).sub.2 to form a reaction mixture; and (3) recovering ((CH.sub.3).sub.3 C) ((CH.sub.3).sub.2 N).sub.2 P from the reaction mixture.

Abstract: A new compound, tertiarybutylbis-(dimethylamino)phosphine, ((CH.sub.3).sub.3 C)((CH.sub.3).sub.2 N).sub.2 P, is used as a precursor in forming phosphorus-containing semiconductor material by chemical vapor deposition. Tertiarybutylbis-(dimethylamino)phosphine is prepared by reacting a phosphorus trihalide, PX.sub.3, with the tertiarybutyl Grignard reagent ((CH.sub.3).sub.3 C)MgX. The resultant product is treated with lithium dimethylamide reagent LiN(CH.sub.3).sub.2. Tertiarybutylbis-(dimethylamino)phosphine is then recovered from the reaction mixture. Phosphorus-containing semiconductor materials are formed by chemical vapor deposition by means of bubbling a carrier gas through the new compound and then transporting the ((CH.sub.3).sub.3 C)((CH.sub.3).sub.2 N).sub.2 P with the carrier gas to a heated substrate. Additional elements from groups II, III, V, and VI of the periodic table are then deposited on the substrate to form the Phosphorus-containing semiconductor materials.