Patents by Inventor Thomas J. Pawlowski

Thomas J. Pawlowski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6909659
    Abstract: A zero power standby mode in a memory device used in a system, such as a battery powered hand held device. By disconnecting the internal power supply bus on the memory device from the external power supply during standby mode, the junction leakage and gate induced drain leakage can be eliminated to achieve a true zero-power standby mode. A p-channel field effect transistor (FET) may be used to gate the external power supply such that the internal power supply bus on the memory device may be disconnected from the external power supply.
    Type: Grant
    Filed: August 30, 2001
    Date of Patent: June 21, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Simon J. Lovett, Thomas J. Pawlowski, Brian P. Higgins
  • Patent number: 6879538
    Abstract: A zero power standby mode in a memory device used in a system, such as a battery powered hand held device. By disconnecting the internal power supply bus on the memory device from the external power supply during standby mode, the junction leakage and gate induced drain leakage can be eliminated to achieve a true zero-power standby mode. A p-channel field effect transistor (FET) may be used to gate the external power supply such that the internal power supply bus on the memory device may be disconnected from the external power supply.
    Type: Grant
    Filed: August 28, 2002
    Date of Patent: April 12, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Simon J. Lovett, Thomas J. Pawlowski, Brian P. Higgins
  • Patent number: 6845054
    Abstract: A zero power standby mode in a memory device used in a system, such as a battery powered hand held device. By disconnecting the internal power supply bus on the memory device from the external power supply during standby mode, the junction leakage and gate induced drain leakage can be eliminated to achieve a true zero-power standby mode. A p-channel field effect transistor (FET) may be used to gate the external power supply such that the internal power supply bus on the memory device may be disconnected from the external power supply.
    Type: Grant
    Filed: August 28, 2002
    Date of Patent: January 18, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Simon J. Lovett, Thomas J. Pawlowski, Brian P. Higgins
  • Patent number: 4731604
    Abstract: A portable hand held distress signal device having a casing member for receiving dry cell batteries with the casing having positive and negative terminals and an ON-OFF switch connected in series therewith, a dome member of generally red plastic transparent material having an end portion for receiving a signal member and an enlarged portion for receiving a control member and an engaging portion for connecting securably with a mating engaging portion of the casing member, the control member including a frame member having respective current terminals for engaging with the terminals of the casing member, a buzzer and motor in the control member connected in circuit with the terminals of the signal member, a shaft of the motor driving reduction gears which in turn rotate a metal shaft extending within the dome member, a reflector and bulb holder supported at the distal end of the metal shaft and for supplying current from one of the terminals thereto, a metal disk having a central opening for passing the metal s
    Type: Grant
    Filed: August 7, 1986
    Date of Patent: March 15, 1988
    Inventor: Thomas J. Pawlowski, Jr.