Abstract: Coplanar interdigitated gate and emitter contacts are accessible at the surface of a large area wafer forming a high power, high speed controlled rectifier. A pressure contact is made to the emitter contact which is raised above the level of the gate contact. The upper surface of the gate contact is anodized to provide an insulation layer which prevents accidental shorting of the gate to the emitter contact.

Abstract: An alloyed diode is formed of a silicon wafer which is sandwiched between two pre-clad molybdenum disks. The upper molybdenum disk is clad on the side facing the silicon wafer with a thin aluminum foil and is clad on its outer surface with a nickel foil. The bottom molybdenum is clad with a solder foil of silver containing small amounts of germanium, copper and arsenic on the surface facing the silicon and is clad with nickel on its opposite surface. The three parts are stacked atop one another and placed in an alloying furnace to form a completed semiconductor wafer with solderable electrodes on opposite sides.