Abstract: A method, apparatus and a system, for performing a process control using analysis of an upstream process is provided. The method comprises performing a first process on a workpiece and performing a qualitative analysis upon the workpiece relating to the first process, the qualitative analysis comprises analyzing at least one metrology measurement relating to the first process and a workpiece feature to evaluate a characteristic of the workpiece. The method further comprises selecting a process control parameter for performing a second process upon the workpiece based upon the qualitative analysis.

Abstract: A method and an apparatus are provided for parallel fault detection. The method comprises receiving data associated with processing of a workpiece by a first processing tool, receiving data associated with processing of a workpiece by a second processing tool and comparing at least a portion of the received data to a common fault model to determine if a fault associated with at least one of the processing of the workpiece by the first processing tool and processing of the workpiece by the second processing tool occurred.

Abstract: A method and an apparatus for dynamically adjusting a sampling rate relating to wafer examination. A process step is performed upon a plurality of workpieces associated with a lot. A sample rate for acquiring metrology data relating to at least one of the processed workpiece is determined. A dynamic sampling rate adjustment process is performed to adaptively modify the sample rate. The dynamic sampling rate adjustment process includes comparing a predicted process outcome and an actual process outcome and modifying the sampling rate based upon the comparison.

Abstract: The present invention is generally directed to plasma state monitoring to control etching processes and across-wafer uniformity, and a system for performing same. In one illustrative embodiment, the method comprises generating a plasma within an etching tool, monitoring at least one characteristic of the generated plasma, and controlling at least one parameter of a plasma etching process performed in the tool based upon the monitored at least one characteristic of the plasma. In another illustrative embodiment, the method comprises generating a plasma within an etch tool, performing a plasma etching process within the etch tool, determining at least one characteristic of the plasma, and controlling at least one parameter of the etching process based upon a comparison of the determined at least one characteristic of the plasma and a target value for the determined at least one characteristic of the plasma.

Abstract: The present invention provides a method and apparatus for controlling processing tools and related control units. The method includes accessing information indicative of at least one excursion of at least one processing tool detected by a first control unit associated with the at least one processing tool. The method also includes determining at least one action to be taken by at least one second control unit associated with the at least one processing tool based on the information indicative of said at least one excursion.

Abstract: A method and an apparatus for implementing a multi-variate process control system. A workpiece is processed using a primary process control function during a first time period. A secondary process control function is performed during at least a portion of the first time period for processing of the workpiece. The secondary process control function is capable of modifying at least one secondary control parameter.

Abstract: The present invention is generally directed to various methods of controlling properties and characteristics of a gate insulation layer based upon electrical test data, and a system for performing same. In one illustrative embodiment, the method comprises performing at least one electrical test on at least one semiconductor device, determining at least one parameter of at least one process operation to be performed to form at least one gate insulation layer on a subsequently formed semiconductor device based upon electrical data obtained from the electrical test, and performing at least one process operation comprised of the determined parameter to form the gate insulation layer.

Abstract: A method and an apparatus for characterizing an uncertainty factor relating to processing workpieces. A first processing step is performed upon a workpiece. A first uncertainty factor associated with the first processing step is calculated. A final uncertainty factor associated with an end-of-line parameter relating to the workpiece is calculated based upon the first uncertainty factor. A process control function based upon the final uncertainty factor is performed.

Abstract: A method for initializing process controllers based on tool event data includes providing a tool having a process controller adapted to employ a control model to control an operating recipe of the tool; receiving a tool event notification; and initializing the control model in response to receiving the tool event notification. A manufacturing system includes a tool and a process controller. The tool is adapted to process wafers in accordance with an operating recipe. The process controller is adapted to employ a control model to control the operating recipe in accordance with a control algorithm. The process controller is further adapted to receive a tool event notification and initialize the control model in response to receiving the tool event notification.

Abstract: A method for controlling a manufacturing process includes processing a plurality of workpieces in a tool; monitoring a rework rate associated with the workpieces processed in the tool; and initiating an automatic corrective action in response to the rework rate being greater than a predetermined threshold. A manufacturing system includes a tool adapted to process a plurality of workpieces and a rework controller adapted to monitor a rework rate associated with the workpieces processed in the tool and initiate an automatic corrective action in response to the rework rate being greater than a predetermined threshold.

Abstract: A method includes processing a plurality of workpieces in accordance with an operating recipe. Metrology data associated with the processing is collected. A control model including at least one tuning parameter having a default value is provided. A plurality of perturbations is introduced to shift the tuning parameter from its default value. Control actions are generated based on the metrology data and the perturbations to the tuning parameter in the control model to modify the operating recipe. An error signal associated with each of the perturbations is generated. The default value of the tuning parameter is modified based on the error signals.

Abstract: A method for controlling a tool adapted to process workpieces in accordance with an operating recipe based on a process target value is provided. The method includes collecting manufacturing characteristic data associated with the workpieces; correlating the manufacturing characteristic data with a first manufacturing metric to generate a first manufacturing metric distribution for the workpieces; and adjusting the process target value based on the first manufacturing metric distribution. A manufacturing system includes a processing tool and a target monitor. The processing tool is adapted to process workpieces in accordance with an operating recipe based on a process target value.

Abstract: A method and apparatus is provided for a process control based on an estimated process result. The method comprises processing a workpiece using a processing tool, receiving trace data associated with the processing of the workpiece from the processing tool and estimating at least one process result of the workpiece based on at least a portion of the received trace data. The method further comprises adjusting processing of a next workpiece based on the estimated at least one process result.

Abstract: A method includes collecting a first fabrication parameter associated with the processing of a selected semiconductor device. A second fabrication parameter is estimated for the selected semiconductor device. A first value for at least one electrical characteristic of the selected semiconductor device is predicted based on the collected first fabrication parameter and the estimated second fabrication parameter. A system includes a data collection unit and a prediction unit. The data collection unit is configured to collect a first fabrication parameter associated with the processing of a selected semiconductor device. The prediction unit is configured to estimate a second fabrication parameter for the selected semiconductor device and predict a first value for at least one electrical characteristic of the selected semiconductor device based on the collected first fabrication parameter and the estimated second fabrication parameter.

Abstract: A method for distinguishing between sources of process variation includes processing a plurality of manufactured items in a process flow; storing a set of production environment data associated with each of the manufactured items; identifying manufactured items associated with a process drift; generating a plurality of characteristic threads based on the production environment data; comparing the characteristic threads for at least those manufactured items associated with the process drift; and determining at least one potential cause for the process drift based on the comparison of the characteristic threads. A manufacturing system for distinguishing between sources of process variation is also provided. The manufacturing system includes a plurality of tools for processing manufactured items in a process flow, a database server, and a drift monitor.

Abstract: A method and an apparatus for performing process control based upon a metrology delay. A process step is performed upon a first workpiece. Metrology data related to the first workpiece is acquired. A control adjustment based upon the metrology data is determined. A magnitude of the control adjustment is modified based upon a time period. The time period is defined by a first time frame relating to processing the first workpiece and a second time frame relating to acquiring metrology data related to the first workpiece.

Abstract: A processing line includes a process tool, a metrology tool, a tool state monitor, and a sampling controller. The processing tool is configured to process workpieces. The metrology tool is configured to measure an output characteristic of selected workpieces in accordance with a sampling plan. The tool state monitor is configured to observe at least one tool state variable value during the processing of a selected workpiece in the processing tool. The sampling controller is configured to receive the observed tool state variable value and determine the sampling plan for the metrology tool based on the observed tool state variable value. A method for processing workpieces includes processing a plurality of workpieces in a processing tool. A characteristic of selected workpieces is measured in accordance with a sampling plan. At least one tool state variable value is observed during the processing of a particular workpiece in the processing tool.

Abstract: The present invention is generally directed to various control methodologies using optical emission spectroscopy derived data, and a system for performing same. In one illustrative embodiment, the method comprises performing an etching process within an etch tool to define at least one feature above a semiconducting substrate, obtaining optical emission spectroscopy data for the etching process, and controlling at least one parameter of the etching process based upon a comparison of the obtained optical emission spectroscopy data and target optical emission spectroscopy data associated with at least one of a target profile and a target critical dimension for the at least one feature.

Abstract: The present invention provides for a method and an apparatus for implementing a control simulation environment into a manufacturing environment. A process task is defined. A process simulation function is performed to produce simulation data corresponding to the process task. The simulation data is integrated with a process control environment for controlling a manufacturing process of a semiconductor device.

Abstract: A method for controlling a manufacturing system includes processing workpieces in a plurality of tools; initiating a baseline control script for a selected tool of the plurality of tools; providing context information for the baseline control script; determining a tool type based on the context information; selecting a group of control routines for the selected tool based on the tool type; determining required control routines from the group of control routines based on the context information; and executing the required control routines to generate control actions for the selected tool. A manufacturing system includes a plurality of tools adapted to process workpieces, a control execution manager, and a control executor. The control execution manager is adapted to initiate a baseline control script for a selected tool of the plurality of tools and provide context information for the baseline control script.