Abstract: A beamlead semiconductor component and a method for manufacturing the semiconductor device with low parasitic capacitance and electrical resistance is provided. The beamlead component includes a thick layer of glass forming one end of the component directly beneath one of the beamleads and extending up to the edge of the active device on the beamlead surface of the component. On the opposite side of the active device from the glass layer is a metalized cavity that provides the electrical contact for a second beamlead with the semiconductor substrate. From the other surface, the non-beamlead surface, of the component another metalized cavity adjacent to the active region of the component and the metalized cavity on the beamlead surface has been etched. The cavity in the other surface of the component exposes a portion of the deepest surface of the metalization in the cavity on the beamlead surface to make electrical contact between the two metalizations.