Patents by Inventor Thomas Jacke
Thomas Jacke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11164971Abstract: A vertical SiC MOSFET having a source terminal, a drain terminal, and a gate region, as well as an epitaxial layer disposed between the source terminal and the drain terminal and having a doping of a first type, is furnished, a horizontally extending intermediate layer, which has regions having a doping of a second type different from the doping of a first type, being embedded into the epitaxial layer. The vertical SiC MOSFET is notable for the fact that at least the regions having doping of a second type are electrically conductively connected to the source terminal. The gate region can be disposed in a gate trench.Type: GrantFiled: January 30, 2017Date of Patent: November 2, 2021Assignee: Robert Bosch GmbHInventors: Thomas Jacke, Wolfgang Feiler
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Publication number: 20200295186Abstract: A vertical SiC MOSFET having a source terminal, a drain terminal, and a gate region, as well as an epitaxial layer disposed between the source terminal and the drain terminal and having a doping of a first type, is furnished, a horizontally extending intermediate layer, which has regions having a doping of a second type different from the doping of a first type, being embedded into the epitaxial layer. The vertical SiC MOSFET is notable for the fact that at least the regions having doping of a second type are electrically conductively connected to the source terminal. The gate region can be disposed in a gate trench.Type: ApplicationFiled: January 30, 2017Publication date: September 17, 2020Applicant: Robert Bosch GmbHInventors: Thomas Jacke, Wolfgang Feiler
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Patent number: 10490994Abstract: A device for current sensing of a power transistor system having a power transistor, a first series circuit which includes a first transistor and a first resistance, the first resistance disposed in a load circuit of the first transistor, a second series circuit which has a second transistor and a second resistance disposed in a load circuit of the second transistor, the first series circuit, the second series circuit and the power transistor situated in parallel with one another, the first resistance connected to the first transistor in an electrically conductive manner when the first transistor is switched on, and the second resistance connected to the second transistor in an electrically conductive manner when the second transistor is switched on, and a gate terminal of the first transistor is connected in an electrically conductive manner to a gate terminal of the power transistor when the power transistor is switched on.Type: GrantFiled: April 24, 2015Date of Patent: November 26, 2019Assignee: Robert Bosch GmbHInventors: Thomas Jacke, Werner Schiemann
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Patent number: 10460931Abstract: A transistor, including a substrate of a first doping type; an epitaxy layer of the first doping type above the substrate; a channel layer of a second doping type, differing from the first doping type, above the epitaxy layer; a plurality of trenches in the channel layer, which have a gate electrode situated below the trenches and are bordered by a source terminal of the first doping type above the channel layer; a plurality of shielding areas of the second doping type, which are situated below the gate electrode. The shielding areas are guided below the trenches together in a interconnection of shielding areas, and several shielding areas are jointly guided to terminals for contacting the shielding areas.Type: GrantFiled: October 19, 2016Date of Patent: October 29, 2019Assignee: Robert Bosch GmbHInventors: Christian Tobias Banzhaf, Martin Rambach, Michael Grieb, Thomas Jacke
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Publication number: 20180374698Abstract: A transistor, including a substrate of a first doping type; an epitaxy layer of the first doping type above the substrate; a channel layer of a second doping type, differing from the first doping type, above the epitaxy layer; a plurality of trenches in the channel layer, which have a gate electrode situated below the trenches and are bordered by a source terminal of the first doping type above the channel layer; a plurality of shielding areas of the second doping type, which are situated below the gate electrode. The shielding areas are guided below the trenches together in a interconnection of shielding areas, and several shielding areas are jointly guided to terminals for contacting the shielding areas.Type: ApplicationFiled: October 19, 2016Publication date: December 27, 2018Inventors: Christian Tobias Banzhaf, Martin Rambach, Michael Grieb, Thomas Jacke
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Patent number: 9761706Abstract: An SiC trench transistor having a first terminal and an epitaxial layer positioned vertically between a gate trench and a second terminal; a compensation layer extending horizontally being provided in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer. A method for manufacturing an SiC trench transistor is also provided, an epitaxial layer being provided on a second terminal of the SiC trench transistor; a compensation layer extending horizontally being implanted in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer; and a first terminal and a gate trench being provided above the compensation layer.Type: GrantFiled: November 21, 2014Date of Patent: September 12, 2017Assignee: Robert Bosch GmbHInventors: Ning Qu, Thomas Jacke, Michael Grieb, Martin Rambach
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Publication number: 20170110870Abstract: A device for current sensing of a power transistor system having a power transistor, a first series circuit which includes a first transistor and a first resistance, the first resistance disposed in a load circuit of the first transistor, a second series circuit which has a second transistor and a second resistance disposed in a load circuit of the second transistor, the first series circuit, the second series circuit and the power transistor situated in parallel with one another, the first resistance connected to the first transistor in an electrically conductive manner when the first transistor is switched on, and the second resistance connected to the second transistor in an electrically conductive manner when the second transistor is switched on, and a gate terminal of the first transistor is connected in an electrically conductive manner to a gate terminal of the power transistor when the power transistor is switched on.Type: ApplicationFiled: April 24, 2015Publication date: April 20, 2017Inventors: Thomas Jacke, Werner Schiemann
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Publication number: 20160329424Abstract: An SiC trench transistor having a first terminal and an epitaxial layer positioned vertically between a gate trench and a second terminal; a compensation layer extending horizontally being provided in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer. A method for manufacturing an SiC trench transistor is also provided, an epitaxial layer being provided on a second terminal of the SiC trench transistor; a compensation layer extending horizontally being implanted in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer; and a first terminal and a gate trench being provided above the compensation layer.Type: ApplicationFiled: November 21, 2014Publication date: November 10, 2016Inventors: Ning Qu, Thomas Jacke, Michael Grieb, Martin Rambach
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Patent number: 9478613Abstract: A semiconductor system for a current sensor in a power semiconductor includes: on a substrate, a multiple arrangement of transistor cells having an insulated gate electrode, whose emitter terminals are connected in a first region via a first conductive layer to at least one output terminal and whose emitter terminals are connected in a second region via a second conductive layer to at least one sensor terminal, which is situated outside of a first cell region boundary, which encloses the transistor cells of the first region and the second region, a trench structure belonging to the first cell region boundary being developed between the transistor cells of the second region and the sensor terminal.Type: GrantFiled: January 25, 2013Date of Patent: October 25, 2016Assignee: Robert Bosch GmbHInventors: Christian Pluntke, Timm Hoehr, Thomas Jacke, Frank Wolter, Holger Ruething, Guenther Koffler
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Patent number: 9275915Abstract: An electrical circuit device includes a semiconductor component which has power terminals and a control terminal electrically insulated from the power terminals, for applying a control voltage, and a control terminal contact surface for contacting the control terminal for measuring the electrical behavior of the semiconductor component. A connection device is provided, via which the control terminal is electrically connectable to a series device, the connection device being transferable from a nonconductive state into a conductive state, in which the control terminal is connected to the series device.Type: GrantFiled: October 22, 2010Date of Patent: March 1, 2016Assignee: ROBERT BOSCH GMBHInventors: Holger Heinisch, Joachim Joos, Thomas Jacke, Christian Foerster
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Publication number: 20140374795Abstract: A semiconductor system for a current sensor in a power semiconductor includes: on a substrate, a multiple arrangement of transistor cells having an insulated gate electrode, whose emitter terminals are connected in a first region via a first conductive layer to at least one output terminal and whose emitter terminals are connected in a second region via a second conductive layer to at least one sensor terminal, which is situated outside of a first cell region boundary, which encloses the transistor cells of the first region and the second region, a trench structure belonging to the first cell region boundary being developed between the transistor cells of the second region and the sensor terminal.Type: ApplicationFiled: January 25, 2013Publication date: December 25, 2014Applicant: Robert Bosch GmbHInventors: Christian Pluntke, Timm Hoehr, Thomas Jacke
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Patent number: 8450860Abstract: A power switch component having a semiconductor switch and a contacting applied to a contact zone of the semiconductor switch is introduced. The contact zone has a semiconductor layer and a metal plating applied to the semiconductor layer. The semiconductor layer has at least one conducting region and at least one non-conducting region situated directly under the metal plating.Type: GrantFiled: February 11, 2011Date of Patent: May 28, 2013Assignee: Robert Bosch GmbHInventors: Thomas Jacke, Christian Foerster, Timm Hoehr, Holger Heinisch, Christian Pluntke, Joachim Joos
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Publication number: 20120306528Abstract: An electrical circuit device includes a semiconductor component which has power terminals and a control terminal electrically insulated from the power terminals, for applying a control voltage, and a control terminal contact surface for contacting the control terminal for measuring the electrical behavior of the semiconductor component. A connection device is provided, via which the control terminal is electrically connectable to a series device, the connection device being transferable from a nonconductive state into a conductive state, in which the control terminal is connected to the series device.Type: ApplicationFiled: October 22, 2010Publication date: December 6, 2012Inventors: Holger Heinisch, Joachim Joos, Thomas Jacke, Christian Foerster
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Patent number: 8074631Abstract: A circuit configuration for switching current flow through an ignition coil, in which the switching process is able to be executed by at least one first transistor that is controllable by a control signal which is able to be supplied via a control signal input of the circuit configuration, and the control signal input is connected to at least one variable resistor.Type: GrantFiled: December 10, 2008Date of Patent: December 13, 2011Assignee: Robert Bosch GmbHInventors: Shike Hu, Rainer Topp, Thomas Jacke, Christian Pluntke
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Publication number: 20110260341Abstract: A power switch component having a semiconductor switch and a contacting applied to a contact zone of the semiconductor switch is introduced. The contact zone has a semiconductor layer and a metal plating applied to the semiconductor layer. The semiconductor layer has at least one conducting region and at least one non-conducting region situated directly under the metal plating.Type: ApplicationFiled: February 11, 2011Publication date: October 27, 2011Inventors: Thomas Jacke, Christian Foerster, Timm Hoehr, Holger Heinisch, Christian Pluntke, Joachim Joos
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Publication number: 20090241924Abstract: A circuit configuration for switching current flow through an ignition coil, in which the switching process is able to be executed by at least one first transistor that is controllable by a control signal which is able to be supplied via a control signal input of the circuit configuration, and the control signal input is connected to at least one variable resistor.Type: ApplicationFiled: December 10, 2008Publication date: October 1, 2009Inventors: Shike Hu, Rainer Topp, Thomas Jacke, Christian Pluntke