Abstract: Contact over active gate (COAG) structures with gate recess for gate insulating cap layers, and methods of fabricating contact over active gate (COAG) structures using a gate recess for accommodating gate insulating cap layers, are described. In an example, an integrated circuit structure includes a vertical stack of horizontal nanowires or a fin. An epitaxial source or drain structure is coupled to the vertical stack of horizontal nanowires or the fin. A gate stack is over the vertical stack of horizontal nanowires or the fin, the gate stack including a gate dielectric and a gate electrode, the gate electrode including a gate electrode material layer, a lower fill material, and an upper fill material, the upper fill material distinct from the lower fill material. A gate insulating cap structure is on the upper fill material of the gate stack.

Abstract: An IC device may include one or more vias for delivering power to one or more transistors in the IC device. A via may have one or more widened ends to increase capacitance and decrease resistance. A transistor may include a source electrode over a source region and a drain electrode over a drain region. The source region or drain region may be in a support structure that has one or more semiconductor materials. The via has a body section and two end sections, the body section is between the end sections. One or both end sections are wider than the body section, e.g., by approximately 6 nanometers to approximately 12 nanometers. One end section is connected to an interconnect at the backside of the support structure. The other end section is connected to a jumper, which is connected to the source electrode or drain electrode.