Abstract: Capacitive coupling, and attendant cross-talk, is reduced by increasing the distance between wire surfaces in integrated circuit applications. This is done by changing wire shape from the conventional rectangular cross-section. A cross-section which consists of a rectangular portion and a shaped, triangular portion is created, having the effect of increasing the effective distance between adjacent conductors. Cross-sectional area of wires is maintained and thus the current carrying capacity is maintained. The wire shapes may be produced using several alternate methods.

Abstract: An apparatus and method provide deposition on a surface by angled sputtering using a collimation grid having angled vanes which limit the distribution of trajectories of particles in at least one coordinate direction around a central axis oriented at an angle of less than 90.degree. to said surface; resulting in improved uniformity of deposition and/or selective favoring of deposition on surfaces at a high angle to the deposition surface (e.g. sidewalls). Substantially parallel orientation and uniform spacing of the sputtering target and deposition surface provides good uniformity of results over the deposition surface. The angled trajectories of sputtered particles provides improved deposition on sides of upstanding mandrel features and filling of recessed features of high aspect ratio, especially when the collimation grid is rotated about an axis generally perpendicular to the deposition surface.

Abstract: A process for forming a dual-damascene interconnect employs a spun-on organic layer above an interlayer dielectric having a set of apertures for vias that forms tapered regions about the apertures without penetrating the apertures; the slope of the tapered regions being transferred in the etching process to form self-aligned tapered vias.

Abstract: A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.

Abstract: A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.

Abstract: A method of forming recesses in a substrate such as a capacitor so as to increase the surface area thereof and therefore the charge storage capacity of the capacitor. This is accomplished by utilizing a micro mask formed by agglomeration on the surface of the substrate. The agglomerated material, such as gold, titanium nitride or titanium silicide, is used as a mask for selectively etching the substrate to form recesses therein. Alternatively, an oxide transfer mask can be utilized with the agglomerated material micro mask to etch the substrate.

Abstract: An damascene x-ray mask comprises an oxide membrane layer having trenches formed therein defining an x-ray mask pattern. The trenches are filled with collimated, sputtered tungsten sputtered in a relatively high pressure environment. The result is a dense, low stress tungsten film completely filling the trenches. Damascene refers to the process by which the mask is formed. The mask is formed on a silicon substrate and then the substrate is etched away from the bottom side leaving substantially just the oxide layer and the collimated tungsten. The oxide layer is transparent to x-rays and the collimated tungsten layer is opaque to x-rays.

Abstract: Capacitive coupling, and attendant cross-talk, is reduced by increasing the distance between wire surfaces in integrated circuit applications. This is done by changing wire shape from the conventional rectangular cross-section. A cross-section which consists of a rectangular portion and a shaped, triangular portion is created, having the effect of increasing the effective distance between adjacent conductors. Cross-sectional area of wires is maintained and thus the current carrying capacity is maintained. The wire shapes may be produced using several alternate methods.

Abstract: An improved process for depositing a conductive thin film upon an integrated circuit substrate by collimated sputtering is disclosed. The sputtered films are alloys of aluminum; a preferred alloying metal is magnesium. The sputtered films of the invention have a more uniform orientation of grains than sputtered aluminum copper silicon alloy films. Such processes are especially useful in the fabrication of integrated circuit devices having aluminum alloy wiring elements.