Abstract: A process is disclosed for forming multilayered polyimide structure from negative photosensitive polyimide precursors. An initial polyimide layer is deposited and imagewise exposed. The unexposed portions of the initial polyimide layer are inhibited and then a second polyimide layer is deposited and likewise imagewise exposed. The films are developed, thereby forming a multilayer polyimide structure. After formation of the multilayer polyimide structure, a conductive material is applied on a substrate and then the polyimide layers are lifted off thereby forming a desired pattern of metallization.

Abstract: Novel intermediate compounds capable of being applied to a semiconductor precursor by spin-on methods which exhibit good planarity and gap-fill characteristics, the cured composites of which are capable of withstanding temperatures in excess of 500.degree. C. The disclosure further encompasses a process for fabricating semiconductor devices utilizing the intermediate compounds and its composite.