Patents by Inventor Thomas, Jr. E. Spikes

Thomas, Jr. E. Spikes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having a thin gate oxide and method of manufacture thereof
    Patent number: 5970350
    Abstract: A process for fabricating a device having a thin gate oxide layer on which a gate electrode is formed is disclosed. The thin gate oxide layer is formed using an ion implantation process in order to reliably control the thickness of the gate oxide layer. A nitrogen-containing species is used in the ion implantation in order to form a nitrogen rich oxide layer and to increase the reliability and performance of a resultant device.
    Type: Grant
    Filed: December 5, 1996
    Date of Patent: October 19, 1999
    Assignee: Advanced Micro Devices
    Inventors: Mark I. Gardner, Thomas, Jr. E. Spikes, Robert Paiz