Abstract: Various embodiments include a power semiconductor circuit comprising: two DC voltage terminals; a half-bridge connected between the DC voltage terminals, the half-bridge including two series-connected switchgear units; an AC voltage terminal associated with the half-bridge; a gate-driver circuit associated with each of the switchgear units; a commutation capacitor parallel to the half-bridge; a module controller; and a meter for determining the current to the AC voltage terminal. Each switchgear unit comprises a respective power semiconductor switch or a plurality of parallel-connected power semiconductor switches. The half-bridge, the commutation capacitor, and the gate-driver circuit are arranged on a common homogeneous circuit carrier.

Abstract: A single-electron transistor (1) has an elongate conductive channel (2) and a side gate (3) formed in a 5 nm-thick layer (4) of Ga0.98Mn0.02As. The single-electron transistor (1) is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory.