Abstract: A lighting apparatus is provided having one or more light emitting diodes arranged in a row. The light emitting diodes may be supported by an elongated body. The elongated body may comprise an optical element formed from an at least partially optically transmissive material. The lighting apparatus has two ends and may have electrical connectors at the ends.

Abstract: A lighting apparatus is provided having one or more light emitting diodes arranged in a row. The light emitting diodes may be supported by an elongated body. The elongated body may comprise an optical element formed from an at least partially optically transmissive material. The lighting apparatus has two ends and may have electrical connectors at tho ondo.

Abstract: A linear lamp is provided having one or more light emitting elements provided therein. The light emitting elements are directed to emit light in a direction different from the primary direction of the illumination of the lamp. The light emitting elements may be supported by a supporting optical element. The supporting optical element may permit the transmission of light therethrough. The supporting optical element may be an integral window upon which the light emitting elements are disposed.

Abstract: A linear lamp is provided having one or more light emitting elements provided therein. The light emitting elements are directed to emit light in a direction different from the primary direction of the illumination of the lamp. The light emitting elements may be supported by a supporting optical element. The supporting optical element may permit the transmission of light therethrough. The supporting optical element may be an integral window upon which the light emitting elements are disposed.

Abstract: A light emitting device comprising a gallium and nitrogen containing substrate. The device also has an electrically isolating material grown between the substrate and an active region such that the light emitting device is operable at a voltage greater than 10V.

Abstract: A method of maskless lateral epitaxial overgrowth (LEO) of aluminum nitride (AlN) and high aluminum composition aluminum gallium nitride (AlGaN) layers by crystal growth techniques, such as metalorganic chemical vapor deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), other vapor phase transport techniques such as sublimation, and Molecular Beam Epitaxy (MBE). The process etches periodic patterns into a suitable material, such AlN or high aluminum composition AlGaN base layers heteroepitaxially grown on a substrate or a substrate itself. A lateral epitaxial overgrowth is performed of the AlN or high aluminum composition AlGaN layers on the suitable material. Lateral epitaxial overgrowth of the AlN or high aluminum composition AlGaN layers may be enhanced by using low V/III ratios and fast growth rates. The process reduces the threading dislocation density (TDD) in high Al containing nitrides by several orders of magnitude.

Abstract: A kit containing a solution of boronic acid adducts of technetium-99 m dioxime complexes; and hydroxypropyl gamma cyclodextrin to maintain the solution free of particulate matter originating from the formulation.