Patents by Inventor Thomas KEMPA

Thomas KEMPA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SUBSTRATE DIRECTED SYNTHESIS OF TRANSITION-METAL DICHALCOGENIDE CRYSTALS WITH TUNABLE DIMENSIONALITY AND OPTICAL PROPERTIES
    Publication number: 20220380934
    Abstract: A method of producing transition-metal dichalcogenide crystals includes providing a silicon substrate having a phosphine-treated surface, exposing the phosphine-treated surface of the silicon substrate to a vapor containing a transition metal, and exposing the phosphine-treated surface of the silicon substrate to a vapor containing a chalcogen. A crystal of the transition-metal and the chalcogen is formed on the phosphine-treated surface of the silicon substrate to produce a transition-metal dichalcogenide crystal by chemical vapor deposition.
    Type: Application
    Filed: November 16, 2020
    Publication date: December 1, 2022
    Applicant: The Johns Hopkins University
    Inventors: Thomas Kempa, Tornojit Chowdhury, Jungkil Kim, Erick Sadler
  • Crystal growth method in a semiconductor device
    Patent number: 11111598
    Abstract: According to one embodiment, a crystal growth method includes forming a first member at at least a part of a bottom portion of a hole in a structure body. The hole includes the bottom portion and a side portion. The first member includes a first element. The first element is not adhered to at least a part of the side portion in the forming the first member. The crystal growth method includes growing a crystal member inside the hole by supplying a source material to the hole after the forming the first member. The source material includes a second element. The crystal member includes the second element.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: September 7, 2021
    Assignees: KABUSHIKI KAISHA TOSHIBA, The Johns Hopkins University
    Inventors: Hiro Gangi, Jongil Hwang, Thomas Kempa, Eric Thompson
  • CRYSTAL GROWTH METHOD AND SEMICONDUCTOR DEVICE
    Publication number: 20200407871
    Abstract: According to one embodiment, a crystal growth method includes forming a first member at at least a part of a bottom portion of a hole in a structure body. The hole includes the bottom portion and a side portion. The first member includes a first element. The first element is not adhered to at least a part of the side portion in the forming the first member. The crystal growth method includes growing a crystal member inside the hole by supplying a source material to the hole after the forming the first member. The source material includes a second element. The crystal member includes the second element.
    Type: Application
    Filed: June 28, 2019
    Publication date: December 31, 2020
    Applicants: KABUSHIKI KAISHA TOSHIBA, The Johns Hopkins University
    Inventors: Hiro GANGI, Jongil HWANG, Thomas KEMPA, Eric THOMPSON