Abstract: In accordance with an embodiment, a method of operating a transistor includes: switching the transistor on and off based on a control signal; monitoring a voltage of a collector node of the transistor; detecting whether the voltage of the collector node of the transistor is above a first threshold; and after detecting the voltage of the collector node of the transistor above the first threshold, regulating a voltage across a load path of the transistor to a first target voltage.

Abstract: A package-integrated power semiconductor device is provided, which includes at least one power transistor coupled to a current path, a current measurement device and a package. The current measurement device is electrically insulated from and magnetically coupled to the current path. The current path and the current measurement device are arranged so as to enable the current measurement device to sense the magnetic field of a current flowing through the current path. The at least one power transistor, the current measurement device, and the current path are arranged inside the package. Further, a power module assembly including the package-integrated power semiconductor device as well as a method of operating the package-integrated power semiconductor device are provided.

Abstract: A package-integrated power semiconductor device is provided, which includes at least one power transistor coupled to a current path, a current measurement device and a package. The current measurement device is electrically insulated from and magnetically coupled to the current path. The current path and the current measurement device are arranged so as to enable the current measurement device to sense the magnetic field of a current flowing through the current path. The at least one power transistor, the current measurement device, and the current path are arranged inside the package. Further, a power module assembly including the package-integrated power semiconductor device as well as a method of operating the package-integrated power semiconductor device are provided.

Abstract: In accordance with an embodiment, a method of operating a transistor includes: switching the transistor on and off based on a control signal; monitoring a voltage of a collector node of the transistor; detecting whether the voltage of the collector node of the transistor is above a first threshold; and after detecting the voltage of the collector node of the transistor above the first threshold, regulating a voltage across a load path of the transistor to a first target voltage.

Abstract: In accordance with an embodiment, a method of operating a transistor includes: switching the transistor on and off based on a control signal; monitoring a voltage of a collector node of the transistor; detecting whether the voltage of the collector node of the transistor is above a first threshold; and after detecting the voltage of the collector node of the transistor above the first threshold, regulating a voltage across a load path of the transistor to a first target voltage.

Abstract: Semiconductor device is provided with a semiconductor body that includes a clamping structure including a first pn junction diode and a second pn junction diode serially connected back to back between a first contact and a second contact. A breakdown voltage of the first pn junction diode is greater than 100 V, and a breakdown voltage of the second pn junction diode is greater than 10 V.

Abstract: In accordance with an embodiment, a method of operating a transistor includes: switching the transistor on and off based on a control signal; monitoring a voltage of a collector node of the transistor; detecting whether the voltage of the collector node of the transistor is above a first threshold; and after detecting the voltage of the collector node of the transistor above the first threshold, regulating a voltage across a load path of the transistor to a first target voltage.

Abstract: Semiconductor device is provided with a semiconductor body that includes a clamping structure including a first pn junction diode and a second pn junction diode serially connected back to back between a first contact and a second contact. A breakdown voltage of the first pn junction diode is greater than 100 V, and a breakdown voltage of the second pn junction diode is greater than 10 V.

Abstract: Semiconductor device with a semiconductor body that includes a clamping structure including a pn junction diode and a Schottky junction diode serially connected back to back between a first contact and a second contact. A breakdown voltage of the pn junction diode is greater than 100 V and a breakdown voltage of the Schottky junction diode is greater than 10 V.

Abstract: Semiconductor device with a semiconductor body that includes a clamping structure including a pn junction diode and a Schottky junction diode serially connected back to back between a first contact and a second contact. A breakdown voltage of the pn junction diode is greater than 100 V and a breakdown voltage of the Schottky junction diode is greater than 10 V.

Abstract: In various embodiments, a driving circuit for a transistor is provided, wherein the transistor may include a transistor having a control terminal, a diode, a capacitance with a first terminal and a second terminal, wherein the first terminal may be coupled to the control terminal and the second terminal may be coupled to a reference potential via the diode, and a resistor, which is coupled in parallel to the capacitance.

Abstract: In various embodiments, a driving circuit for a transistor is provided, wherein the transistor may include a transistor having a control terminal, a diode, a capacitance with a first terminal and a second terminal, wherein the first terminal may be coupled to the control terminal and the second terminal may be coupled to a reference potential via the diode, and a resistor, which is coupled in parallel to the capacitance.