Patents by Inventor Thomas Kippes
Thomas Kippes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230213595Abstract: In an embodiment a method includes providing a substrate having at least one conductor track situated thereon, applying at least one accumulation of an electrically conductive material to a surface of the conductor track, providing a carrier having at least one electrical contact, applying an electrically conductive adhesive to the at least one accumulation of the electrically conductive material and/or the at least one electrical contact and arranging the substrate and the carrier such that the accumulation of the electrically conductive material and the at least one electrical contact are situated opposite and at a distance from one another, wherein the electrically conductive adhesive forms a mechanical and electrical connection between the accumulation of the electrically conductive material and the at least one electrical contact, and wherein an interspace between the at least one accumulation of the electrically conductive material and the at least one electrical contact is filled with the electricallyType: ApplicationFiled: May 10, 2021Publication date: July 6, 2023Inventors: Dirk Becker, Zeljko Pajkic, Thomas Kippes
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Patent number: 11662223Abstract: An optoelectronic device comprises a substrate, an optoelectronic element mounted on the substrate, a shielding cap providing electromagnetic shielding, at least one optical element attached to the shielding cap, and a detection element configured to detect if the shielding cap is mounted on the substrate.Type: GrantFiled: October 24, 2019Date of Patent: May 30, 2023Assignee: OSRAM Opto Semiconductors GmbHInventors: Zeljko Pajkic, Markus Boss, Thomas Kippes
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Patent number: 11371883Abstract: A semiconductor light source configured for a spectrometer may include at least one multipixel chip, at least one color setting component disposed optically downstream of at least one of emission region, and a drive unit. The color setting component may be configured for altering a spectral emission behavior of assigned emission regions. The drive unit may be configured to operate a plurality of mutually independently drivable emission regions successively, such that during operation thereof at least three spectrally narrowband individual spectra are emitted successively by the plurality of mutually independently drivable emission regions together with the associated color setting component from which individual spectra a total spectrum emitted by the semiconductor light source is constituted.Type: GrantFiled: October 9, 2018Date of Patent: June 28, 2022Assignee: OSRAM OLED GmbHInventors: Christopher Koelper, Carola Diez, Tim Boescke, Thomas Kippes, Melanie Sternecker, Daniel Dietze
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Patent number: 11239398Abstract: An optoelectronic semiconductor component may include at least one optoelectronic semiconductor chip, a reflector, a lens, and a connecting layer. The reflector may have a reflector recess where the semiconductor chip may be arranged. The lens may be fully located in the reflector recess, and the lens may have a lens recess. The connecting layer may fasten the lens on the reflector. The lens may have a lens outer side facing toward a reflector inner wall of the reflector recess. A gap may be between the reflector and the lens, and the gap may be filled only partially with the connecting layer. The semiconductor chip may not touch the lens. The optoelectronic semiconductor component may be incorporated into a biometric sensor.Type: GrantFiled: July 26, 2018Date of Patent: February 1, 2022Assignee: OSRAM OLED GMBHInventors: Thomas Kippes, Claus Jaeger, Jason Rajakumaran
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Publication number: 20210193860Abstract: An optoelectronic semiconductor device may include a first array of first optoelectronic components and a second array of second optoelectronic components arranged in a substrate. The first optoelectronic components may each include a first resonator mirror and a second resonator mirror where the first resonator mirror has a first main surface and an active area suitable for generating radiation. Each resonator mirror is arranged one above the other along a first direction where radiation emitted by the optoelectronic component is emitted via the first main surface. The first optoelectronic components are suitable for emitting electromagnetic radiation. The second optoelectronic components may each include an active area suitable for generating radiation and are suitable for absorbing electromagnetic radiation.Type: ApplicationFiled: July 23, 2019Publication date: June 24, 2021Inventors: Florian Lex, Thomas Kippes, Michael Mueller, Fabian Knorr, Zeljko Pajkic
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Publication number: 20210123772Abstract: An optoelectronic device comprises a substrate, an optoelectronic element mounted on the substrate, a shielding cap providing electromagnetic shielding, at least one optical element attached to the shielding cap, and a detection element configured to detect if the shielding cap is mounted on the substrate.Type: ApplicationFiled: October 24, 2019Publication date: April 29, 2021Inventors: Zeljko PAJKIC, Markus BOSS, Thomas KIPPES
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Patent number: 10886704Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).Type: GrantFiled: December 11, 2019Date of Patent: January 5, 2021Assignee: OSRAM OLED GMBHInventors: Frank Singer, Norwin Von Malm, Tilman Ruegheimer, Thomas Kippes
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Patent number: 10847503Abstract: The invention relates to an optoelectronic component comprising at least one optoelectronic semiconductor chip which is designed to generate or detect electromagnetic radiation, a carrier on which the semiconductor chip is arranged, a first encapsulation body into which the optoelectronic semiconductor chip is embedded, and a second encapsulation body, wherein the first encapsulation body has a first thickness above the semiconductor chip and has a second thickness laterally spaced from the semiconductor chip, the first thickness is less than the second thickness, a third thickness of the first encapsulation body between the first thickness and the second thickness is minimal, and the second encapsulation body is arranged on the first encapsulation body.Type: GrantFiled: April 3, 2019Date of Patent: November 24, 2020Assignee: OSRAM OLED GMBHInventors: Claus Jäger, Thomas Kippes
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Patent number: 10840421Abstract: An optoelectronic component including a first optoelectronic semiconductor chip configured to emit light includes a wavelength from an infrared spectral range, and a second optoelectronic semiconductor chip configured to emit light including a wavelength from a visible spectral range, wherein the optoelectronic component includes a reflector body including a top side and an underside, the reflector body includes a cavity opened toward the top side, a wall of the cavity constitutes a reflector, and the first optoelectronic semiconductor chip is arranged at a bottom of the cavity.Type: GrantFiled: September 14, 2017Date of Patent: November 17, 2020Assignee: OSRAM OLED GmbHInventors: Thomas Kippes, Jason Rajakumaran, Ulrich Frei, Claus Jäger
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Publication number: 20200357970Abstract: An optoelectronic component includes a first optoelectronic semiconductor chip configured to emit infrared light; a second optoelectronic semiconductor chip configured to emit visible light; a reflector body including a top side and an underside, wherein the reflector body includes a cavity opened toward the top side, a wall of the cavity constitutes a reflector, and the first optoelectronic semiconductor chip is arranged at a bottom of the cavity, an optical lens arranged at the top side of the reflector body, and an optical waveguide extending through the reflector body from the underside to the top side, wherein the reflector body is arranged above the second optoelectronic semiconductor chip such that light emitted by the second optoelectronic semiconductor chip passes into the optical waveguide at the underside of the reflector body, and light may emerge from the optical waveguide at the top side of the reflector body.Type: ApplicationFiled: July 29, 2020Publication date: November 12, 2020Inventors: Thomas Kippes, Jason Rajakumaran, Ulrich Frei, Claus Jäger
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Publication number: 20200309597Abstract: A semiconductor light source configured for a spectrometer may include at least one multipixel chip, at least one color setting component disposed optically downstream of at least one of emission region, and a drive unit. The color setting component may be configured for altering a spectral emission behavior of assigned emission regions. The drive unit may be configured to operate a plurality of mutually independently drivable emission regions successively, such that during operation thereof at least three spectrally narrowband individual spectra are emitted successively by the plurality of mutually independently drivable emission regions together with the associated color setting component from which individual spectra a total spectrum emitted by the semiconductor light source is constituted.Type: ApplicationFiled: October 9, 2018Publication date: October 1, 2020Inventors: Christopher Koelper, Carola Diez, Tim Boescke, Thomas Kippes, Melanie Sternecker, Daniel Dietze
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Patent number: 10741996Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). A p-contact surface (61) is electrically connected to the p-contact (41), and an n-contact surface (63) is electrically connected to the n-contact (43) such that the p-contact surface (61) and the n-contact surface (63) are configured for external electrical and mechanical connection of the semiconductor laser (1).Type: GrantFiled: September 29, 2016Date of Patent: August 11, 2020Assignee: OSRAM OLED GMBHInventors: Frank Singer, Norwin Von Malm, Tilman Ruegheimer, Thomas Kippes
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Publication number: 20200251631Abstract: An optoelectronic semiconductor component may include at least one optoelectronic semiconductor chip, a reflector, a lens, and a connecting layer. The reflector may have a reflector recess where the semiconductor chip may be arranged. The lens may be fully located in the reflector recess, and the lens may have a lens recess. The connecting layer may fasten the lens on the reflector. The lens may have a lens outer side facing toward a reflector inner wall of the reflector recess. A gap may be between the reflector and the lens, and the gap may be filled only partially with the connecting layer. The semiconductor chip may not touch the lens. The optoelectronic semiconductor component may be incorporated into a biometric sensor.Type: ApplicationFiled: July 26, 2018Publication date: August 6, 2020Inventors: Thomas KIPPES, Claus JAEGER, Jason RAJAKUMARAN
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Publication number: 20200144794Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).Type: ApplicationFiled: December 11, 2019Publication date: May 7, 2020Inventors: Frank SINGER, Norwin VON MALM, Tilman RUEGHEIMER, Thomas KIPPES
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Patent number: 10554019Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).Type: GrantFiled: September 29, 2016Date of Patent: February 4, 2020Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Frank Singer, Norwin Von Malm, Tilman Ruegheimer, Thomas Kippes
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Publication number: 20190371984Abstract: An optoelectronic component including a first optoelectronic semiconductor chip configured to emit light includes a wavelength from an infrared spectral range, and a second optoelectronic semiconductor chip configured to emit light including a wavelength from a visible spectral range, wherein the optoelectronic component includes a reflector body including a top side and an underside, the reflector body includes a cavity opened toward the top side, a wall of the cavity constitutes a reflector, and the first optoelectronic semiconductor chip is arranged at a bottom of the cavity.Type: ApplicationFiled: September 14, 2017Publication date: December 5, 2019Inventors: Thomas Kippes, Jason Rajakumaran, Ulrich Frei, Claus Jäger
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Publication number: 20190312017Abstract: The invention relates to an optoelectronic component comprising at least one optoelectronic semiconductor chip (2) which is designed to generate or detect electromagnetic radiation, a carrier (3) on which the semiconductor chip (2) is arranged, a first encapsulation body (4) into which the optoelectronic semiconductor chip (2) is embedded, and a second encapsulation body (6), wherein the first encapsulation body (4) has a first thickness (4a) above the semiconductor chip (2) and has a second thickness (4b) laterally spaced from the semiconductor chip (2), the first thickness (4a) is less than the second thickness (4b), a third thickness (4c) of the first encapsulation body (4) between the first thickness (4a) and the second thickness (4b) is minimal, and the second encapsulation body (6) is arranged on the first encapsulation body (4).Type: ApplicationFiled: April 3, 2019Publication date: October 10, 2019Inventors: Claus Jäger, Thomas Kippes
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Publication number: 20180301873Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).Type: ApplicationFiled: September 29, 2016Publication date: October 18, 2018Inventors: Frank SINGER, Norwin VON MALM, Tilman RUEGHEIMER, Thomas KIPPES
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Publication number: 20180301866Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). A p-contact surface (61) is electrically connected to the p-contact (41), and an n-contact surface (63) is electrically connected to the n-contact (43) such that the p-contact surface (61) and the n-contact surface (63) are configured for external electrical and mechanical connection of the semiconductor laser (1).Type: ApplicationFiled: September 29, 2016Publication date: October 18, 2018Inventors: Frank SINGER, Norwin VON MALM, Tilman RUEGHEIMER, Thomas KIPPES
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Publication number: 20180254385Abstract: An optoelectronic component includes a semiconductor chip, the semiconductor chip emitting infrared radiation; a reflector that reflects the infrared radiation of the semiconductor chip; and a filter configured in the form of a coating, the filter being transparent for the infrared radiation of the semiconductor chip, wherein visible light striking the optoelectronic component being absorbed to at least 75%.Type: ApplicationFiled: August 30, 2016Publication date: September 6, 2018Inventors: Thomas Kippes, Claus Jaeger