Abstract: A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device. The gas inlet member has a cooled ceiling panel with outlet openings. The CVD reactor further comprises a shield plate, which adjoins the ceiling panel and has a circular outline. The shield plate has a central zone, an annular zone surrounding the central zone, having a rear side that points toward the ceiling panel, and a flat gas outlet surface pointing toward the process chamber, in which gas outlet openings terminate. The rear side in the central zone defines a rear plane running parallel to the gas outlet surface. The shield plate has a material thickness between 3 to 12 mm, and that the shield plate is spaced apart from the ceiling plate by a gap having a height between 0.3 to 1 mm.

Abstract: A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device. The gas inlet member has a cooled ceiling panel with outlet openings. The CVD reactor further comprises a shield plate, which adjoins the ceiling panel and has a circular outline. The shield plate has a central zone, an annular zone surrounding the central zone, having a rear side that points toward the ceiling panel, and a flat gas outlet surface pointing toward the process chamber, in which gas outlet openings terminate. The rear side in the central zone defines a rear plane running parallel to the gas outlet surface. The shield plate has a material thickness between 3 to 12 mm, and that the shield plate is spaced apart from the ceiling plate by a gap having a height between 0.3 to 1 mm.

Abstract: A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device. The gas inlet member has a cooled ceiling panel with outlet openings. The CVD reactor further comprises a shield plate, which adjoins the ceiling panel and has a circular outline. The shield plate has a central zone, an annular zone surrounding the central zone, having a rear side that points toward the ceiling panel, and a flat gas outlet surface pointing toward the process chamber, in which gas outlet openings terminate. The rear side in the central zone defines a rear plane running parallel to the gas outlet surface. The shield plate has a material thickness between 3 to 12 mm, and that the shield plate is spaced apart from the ceiling plate by a gap having a height between 0.3 to 1 mm.

Abstract: A susceptor for a CVD reactor includes a bearing surface for supporting a substrate holder. A carrier gas is fed into an inner radial zone, in order to floatingly cushion a substrate holder supported above the bearing surface. The gas fed into the inner radial zone leaves a second radial zone through discharge channels and to a slight extent through a gap surrounding the second radial zone and assigned to a third radial zone. The cross-sectional area of the discharge channels and the radial length of the gap are dimensioned such that the volumetric flow of the gas through the discharge channels is greater than through the gap if the latter has a gap height of 200 ?m.

Abstract: A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device. The gas inlet member has a cooled ceiling panel with outlet openings. The CVD reactor further comprises a shield plate, which adjoins the ceiling panel and has a circular outline. The shield plate has a central zone, an annular zone surrounding the central zone, having a rear side that points toward the ceiling panel, and a flat gas outlet surface pointing toward the process chamber, in which gas outlet openings terminate. The rear side in the central zone defines a rear plane running parallel to the gas outlet surface. The shield plate has a material thickness between 3 to 12 mm, and that the shield plate is spaced apart from the ceiling plate by a gap having a height between 0.3 to 1 mm.

Abstract: A CVD reactor includes a gas inlet element for introducing a process gas into a process chamber arranged between a process chamber cover and a susceptor. The gas inlet element contains at least one metal surface that comes into contact with the process gas. The metal surface has a passivation layer which prevents the metal surface from flaking due to exposure to one or more reactive gases. Cooling channels are arranged such that the passivation layer is maximally heated to 100° C. in a cleaning step in which chlorine is introduced into the process chamber and the susceptor is heated to at least 700° C. At the same time, the passivation layer is formed by chemically reacting a metal-organic compound with the metal atoms of the metal surface. The cleaning gas inlet openings are arranged such that the cleaning gas comes into contact with the metal surface that has the passivation layer.

Abstract: A device for transporting a substrate includes a ring-shaped body at least partially surrounding a ring opening. The ring-shaped body includes a first section protruding radially outwards in relation to the ring opening and a second section protruding radially inwards. The first and second sections each have heat transfer properties that determine an axial heat transfer through the sections with an axial temperature difference in relation to a normal of the surface of the ring opening. At least one of the heat transfer properties of the first and second sections is different from one another such that the heat flowing through a unit area element in the axial direction is lower in the first section than in the second section.

Abstract: A CVD reactor includes a gas inlet element for introducing a process gas into a process chamber arranged between a process chamber cover and a susceptor. The gas inlet element contains at least one metal surface that comes into contact with the process gas. The metal surface has a passivation layer which prevents the metal surface from flaking due to exposure to one or more reactive gases. Cooling channels are arranged such that the passivation layer is maximally heated to 100° C. in a cleaning step in which chlorine is introduced into the process chamber and the susceptor is heated to at least 700° C. At the same time, the passivation layer is formed by chemically reacting a metal-organic compound with the metal atoms of the metal surface. The cleaning gas inlet openings are arranged such that the cleaning gas comes into contact with the metal surface that has the passivation layer.

Abstract: A gas distributor for a CVD reactor includes two separate gas distribution chambers, into each of which a process gas can be fed through an infeed opening. Each of the gas distribution chambers is formed, in part, by a gas distribution device disposed in a top layer being in each case flow-connected to connecting channels disposed in a bottom layer. The connecting channels associated with different gas distribution chambers lie alternately adjacent to one another and have gas outlet openings for the process gases to escape. Each of the at least two gas distribution devices has a distribution section, which in each case is flow-connected to a plurality of sub-distribution sections. The connecting channels are flow-connected to at least one of the sub-distribution sections. The sub-distribution sections of different gas distribution chambers lie alternately adjacent to one another and are separated from one another by a dividing wall.

Abstract: In a method for depositing layers on one or more substrates arranged in a process chamber, at least one carbon-containing gaseous source material is used in at least one deposition step. During layer growth on the one or more substrates, parasitic coatings are also deposited on the wall surfaces of the process chamber. After removing the one or more substrates from the process chamber, a gas flow containing one or more cleaning gases is introduced into the process chamber and the process chamber is heated to a cleaning temperature. The parasitic coatings are transformed into volatile substances, which are removed from the process chamber with the gas flow. To remove a carbon-containing residue on the wall surfaces, an ammonia cleaning step is performed in which the carbon-containing residue reacts with ammonia to form a volatile compound which is removed from the process chamber with the gas flow.

Abstract: The invention relates to a method for depositing layers, in particular of elements of the III and V, the II and VI or the IV main group on one or a plurality of substrates (7) arranged in a process chamber (6) of a CVD reactor, wherein at least one carbon-containing gaseous source material is used in at least one deposition step, wherein parasitic coatings are also deposited on the wall surfaces (5, 8) of the process chamber (6) during the layer growth on the one or plurality of substrates, wherein, after removal of the one or plurality of substrates (7) from the process chamber, the parasitic coatings react in a cleaning process, as a result of the introduction of a gas flow containing one or a plurality of cleaning gases and heating of the process chamber (6) to a cleaning temperature, into volatile substances, which are transported out of the process chamber (6) with the gas flow.

Abstract: The invention relates to a gas distributor for a CVD reactor having at least two separate gas distribution chambers (10, 20), into each of which a process gas can be fed through an infeed opening (2, 3), a gas distribution device disposed in a top plane being in each case flow-connected to connecting channels (13, 23) disposed in a bottom plane, the connecting channels (13, 23) associated with different gas distribution chambers (10, 20) lying alternately adjacent to one another and having gas outlet openings (14, 24) for the process gases to escape.

Abstract: The present invention relates to an electrode device (1, 2) for gas discharge sources and to a gas discharge source having one or two of said electrode devices (1, 2). With the proposed design of the cover (8), an efficient cooling of the electrode wheel (7) is achieved, allowing high electrical powers for operating gas discharge sources with such an electrode device.

Abstract: The present invention relates to a method of cleaning and after treatment of optical surfaces in an irradiation unit, said irradiation unit comprising a radiation source (1, 31) emitting EUV-radiation and/or soft X-rays, a first volume (40) following said radiation source (1, 31) and containing first optical components (3, 33) with said optical surfaces, and a second volume (41) following said first volume (40) and containing second optical components (38). The method comprises at least one cleaning step in which a first gas or gas mixture is brought into contact with said optical surfaces, thereby forming volatile compounds with contaminations deposited on said optical surfaces, wherein said compounds are pumped out of the first volume (40) together with the first gas or gas mixture.

Abstract: The present invention provides a method of cleaning optical surfaces in an irradiation unit in order to remove contaminations deposited on said optical surfaces. The method includes a cleaning step in which a first gas or gas mixture is brought into contact with said optical surfaces thereby forming a volatile compound with a first portion of said contaminations. In an operation pause of the irradiation unit prior to the cleaning step, a pretreatment step is performed, in which a second gas or gas mixture is brought into contact with said optical surfaces. Said second gas or gas mixture is selected to react with a second portion of said contaminations different from said first portion to form a reaction product, which is able to form a volatile compound with said first gas or gas mixture.

Abstract: The present invention relates to an electrode device for gas discharge sources, a gas discharge source comprising such an electrode device and to a method of operating the gas discharge source. The electrode device comprises an electrode wheel (1) rotatable around a rotational axis (3) and a wiper unit (11) arranged to limit the thickness of a liquid material film applied to at least a portion of an outer circumferential surface (18) of the electrode wheel (1) during rotation of said electrode wheel (1). The wiper unit (11) is arranged and designed to form a gap (17) between the outer circumferential surface (18) and a wiping edge (19) of the wiper unit (11) and to inhibit or at least reduce a migration of liquid material from side surfaces to the outer circumferential surface (18) of the electrode wheel (1) during rotation.

Abstract: The present invention relates to an electrode device for gas discharge sources, a gas discharge source comprising such an electrode device and to a method of operating the gas discharge source. The electrode device comprises an electrode wheel (1) rotatable around a rotational axis (3) and a wiper unit (11) arranged to limit the thickness of a liquid material film applied to at least a portion of an outer circumferential surface (18) of the electrode wheel (1) during rotation of said electrode wheel (1). The wiper unit (11) is arranged and designed to form a gap (17) between the outer circumferential surface (18) and a wiping edge (19) of the wiper unit (11) and to inhibit or at least reduce a migration of liquid material from side surfaces to the outer circumferential surface (18) of the electrode wheel (1) during rotation.

Abstract: The present invention relates to an electrode device (1, 2) for gas discharge sources and to a gas discharge source having one or two of said electrode devices (1, 2). The electrode device (1, 2) comprises an electrode wheel (7) rotatable in a rotational direction around a rotational axis (22), said electrode wheel (7) having an outer circumferential surface (24) between two side surfaces (25). An electrode wheel cover (8) is provided which covers a portion of the outer circumferential surface (24) and the side surfaces (25) of the electrode wheel (24). The cover (8) is designed to form a cooling channel (12) in the circumferential direction between the cover (8), the outer circumferential surface (24) and radially outer portions part of the side surfaces (25), and to form a gap (23) between the cover (8) and the outer circumferential surface (24) in extension of the cooling channel (12) in the circumferential direction.

Abstract: The present invention relates to a method of cleaning and after treatment of optical surfaces in an irradiation unit, said irradiation unit comprising a radiation source (1, 31) emitting EUV-radiation and/or soft X-rays, a first volume (40) following said radiation source (1, 31) and containing first optical components (3, 33) with said optical surfaces, and a second volume (41) following said first volume (40) and containing second optical components (38). The method comprises at least one cleaning step in which a first gas or gas mixture is brought into contact with said optical surfaces, thereby forming volatile compounds with contaminations deposited on said optical surfaces, wherein said compounds are pumped out of the first volume (40) together with the first gas or gas mixture.

Abstract: The present invention provides a method of cleaning optical surfaces in an irradiation unit in order to remove contaminations deposited on said optical surfaces. The method includes a cleaning step in which a first gas or gas mixture is brought into contact with said optical surfaces thereby forming a volatile compound with a first portion of said contaminations. In an operation pause of the irradiation unit prior to the cleaning step, a pretreatment step is performed, in which a second gas or gas mixture is brought into contact with said optical surfaces. Said second gas or gas mixture is selected to react with a second portion of said contaminations different from said first portion to form a reaction product, which is able to form a volatile compound with said first gas or gas mixture.