Abstract: A method includes receiving data packets from a stream partition of a plurality of stream partitions, processing the data packets with a plurality of stream processors to generate multiple table entries, transmitting the multiple table entries in batches to a plurality of staging tables, the plurality of staging tables being provided for a respective one of the plurality of stream partitions, and receiving the batches at a target table communicatively coupled to the plurality of staging tables, the batches being transmitted from the plurality of staging tables. The plurality of staging tables are updated in first batches at a first frequency and the target table is updated in second batches at a second frequency, the second frequency being different than the first frequency.

Abstract: A system includes a stream partition manager configured to receive data packets input from a plurality of actors, the actors including virtual representations of physical devices, and partition the data packets into a number of stream partitions based at least in part on one or more criteria. The system further includes a plurality of stream processors communicatively coupled to the stream partition manager. Individual stream processors of the plurality of stream processors being configured to receive data packets from a stream partition of the number of stream partitions, process the data packets to generate multiple table entries, and transmit the multiple table entries in batches. The system further includes a target table communicatively coupled to the plurality of stream processors. The target table is configured to receive and store the batches received from the individual stream processors.

Abstract: A system includes a stream partition manager configured to receive data packets input from a plurality of actors, the actors including virtual representations of physical devices, and partition the data packets into a number of stream partitions based at least in part on one or more criteria. The system further includes a plurality of stream processors communicatively coupled to the stream partition manager. Individual stream processors of the plurality of stream processors being configured to receive data packets from a stream partition of the number of stream partitions, process the data packets to generate multiple table entries, and transmit the multiple table entries in batches. The system further includes a target table communicatively coupled to the plurality of stream processors. The target table is configured to receive and store the batches received from the individual stream processors.

Abstract: The invention relates to a detector for determining the position and/or energy of photons and/or charged particles. Said detector comprises a plurality of diodes made of a semi-conductor material, n-contacts (1) and p-contacts (4), the n-contacts being provided by dividing an n-layer into individual segments. Said segments of the n-layer are 20-500 ?m wide. Said detectors are produced by diffusing ions on the side of the semi-conductor material in order to produce an n-contact. A metallic layer is metallized thereon. Trenches are etched between the segments by means of lithography for the segmentation thereof. The inventive detector is high-powered and inter alia enables a high local resolution and high counting rates.

Abstract: The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a substantially flat dome top. A top RF coil is disposed above the dome top, and has an outer loop which is larger in size than the substrates to be processed in the chamber. A cold plate is disposed above the top RF coil, and is larger in size than the substrates to be processed in the chamber.

Abstract: The invention relates to a method for producing a detector for determining the energy of photons and charged particles; to be precise, a so-called ?E detector or transmission detector. The invention also relates to a detector that can be produced by using said method. The aim of the invention is to provide a method for producing a detector of the aforementioned type that is stable over a long period of time and in which dead zones are distinctly minimized. The invention also aims to provide a detector of this type. To these ends, the inventive method is used to produce a Si(Li) substrate having a p+ layer and an n layer. These can be layers produced according to the prior art. According to the inventive method, the n layer is partially removed, for example, by chemical etching, honing or by lapping. Lapping, in particular, has proven to be effective. This reduces the zone that is ineffective in a detector of the aforementioned type. The detector is produced from the substrate treated in this manner.

Abstract: The invention relates to a detector for determining the position and/or energy of photons and/or charged particles. Said detector comprises a plurality of diodes made of a semi-conductor material, n-contacts (1) and p-contacts (4), the n-contacts being provided by dividing an n-layer into individual segments. Said segments of the n-layer are 20–500 ?m wide. Said detectors are produced by diffusing ions on the side of the semi-conductor material in order to produce an n-contact. A metallic layer is metallized thereon. Trenches are etched between the segments by means of lithography for the segmentation thereof. The inventive detector is high-powered and inter alia enables a high local resolution and high counting rates.

Abstract: Abstract of the Disclosure The invention relates to a detector for determining the position and/or energy of photons and/or charged particles. Said detector comprises a plurality of diodes made of a semi-conductor material, n-contacts (1) and p-contacts (4), the n-contacts being provided by dividing an n-layer into individual segments. Said segments of the n-layer are 20-500 ?m wide. Said detectors are produced by diffusing ions on the side of the semi-conductor material in order to produce an n-contact. A metallic layer is metallized thereon. Trenches are etched between the segments by means of lithography for the segmentation thereof. The inventive detector is high-powered and inter alia enables a high local resolution and high counting rates.

Abstract: The invention relates to a position-sensitive detector for measuring charged particles comprising a surface region, which is formed by an amorphous layer with a structured metallic layer disposed above it, characterised in that the structure of the metallic layer is continued into the amorphous layer.

Abstract: The invention relates to a method for producing a detector for determining the energy of photons and charged particles; to be precise, a so-called ?E detector or transmission detector. The invention also relates to a detector that can be produced by using said method. The aim of the invention is to provide a method for producing a detector of the aforementioned type that is stable over a long period of time and in which dead zones are distinctly minimized. The invention also aims to provide a detector of this type. To these ends, the inventive method is used to produce a Si(Li) substrate having a p+ layer and an n layer. These can be layers produced according to the prior art. According to the inventive method, the n layer is partially removed, for example, by chemical etching, honing or by lapping. Lapping, in particular, has proven to be effective. This reduces the zone that is ineffective in a detector of the aforementioned type. The detector is produced from the substrate treated in this manner.

Abstract: The invention relates to a detector for determining the position and/or energy of photons and/or charged particles. Said detector comprises a plurality of diodes made of a semi-conductor material, n-contacts (1) and p-contacts (4), the n-contacts being provided by dividing an n-layer into individual segments. Said segments of the n-layer are 20-500 &mgr;m wide. Said detectors are produced by diffusing ions on one side of the semi-conductor material in order to produce an n-contact. A metallic layer is metallised thereon. Trenches are etched between the segments by means of lithography for the segmentation thereof. The inventive detector is high-powered and inter alia enables a high local resolution and high counting rates.

Abstract: The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a substantially flat dome top. A top RF coil is disposed above the dome top, and has an outer loop which is larger in size than the substrates to be processed in the chamber. A cold plate is disposed above the top RF coil, and is larger in size than the substrates to be processed in the chamber.

Abstract: The present invention provides exemplary antenna coil assemblies and substrate processing chambers using such assemblies. In one embodiment, an antenna coil assembly (100) for a substrate processing chamber includes an antenna coil (102) disposed in a frame (104). The frame includes a plurality of spaced apart tabs (120) around a periphery of the frame, with the coil coupled to the frame at the tabbed locations. At least one notch (122) is provided between each pair of adjacent tabs. The notches are adapted to facilitate thermal expansion and contraction of the frame at the notched locations to reduce stresses on the frame and coil connections.