Patents by Inventor Thomas Krotscheck Ostermann
Thomas Krotscheck Ostermann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230296502Abstract: A monolithic fluid sensor system includes a sensor arrangement and a reference sensor arrangement that are monolithically arranged, wherein respective substrates or semiconductor substrates (wafers or semiconductor wafers) are bonded (fusion bonded or wafer bonded on wafer-level) to each other for providing the resulting monolithic fluid sensor system. The monolithic fluid sensor system particularly includes the sensor arrangement, a cover substrate, the reference sensor arrangement, and a reference cover substrate.Type: ApplicationFiled: February 9, 2023Publication date: September 21, 2023Inventors: Christoph Kovatsch, Elmar Aschauer, Ulf Bartl, Thomas Grille, Thomas Krotscheck Ostermann, Gerald Stocker
-
Publication number: 20220381753Abstract: A fluid sensor includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a thermal radiation detector on the top main surface region of the support structure; and a waveguide structure having a first and a second waveguide section on the top main surface region of the support structure. The first waveguide section guides a first portion of the thermal radiation to the thermal radiation detector and the second waveguide section guides a second portion of the thermal radiation to the thermal radiation detector. The waveguide structure enables an interaction of an evanescence field of the guided first and/or second portion of the thermal radiation with a surrounding fluid.Type: ApplicationFiled: April 8, 2022Publication date: December 1, 2022Inventors: Gerald Stocker, Elmar Aschauer, Ulf Bartl, Thomas Grille, Christoph Kovatsch, Thomas Krotscheck Ostermann
-
Publication number: 20220381659Abstract: A fluid sensor for performing a reference measurement includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a first waveguide section and a first thermal radiation detector on the top main surface region of the support structure; and a cover structure on at least one part of the first waveguide section. The first waveguide section guides a first portion of the thermal radiation emitted by the thermal emitter to the first thermal radiation detector. The first thermal radiation detector detects the guided first portion of the thermal radiation for performing the reference measurement.Type: ApplicationFiled: April 8, 2022Publication date: December 1, 2022Inventors: Gerald Stocker, Elmar Aschauer, Ulf Bartl, Thomas Grille, Christoph Kovatsch, Thomas Krotscheck Ostermann
-
Patent number: 11506599Abstract: A fluid sensor includes a substrate having a top main surface region, wherein the top main surface region of the substrate forms a common system plane of the fluid sensor, a thermal radiation emitter on the top main surface region of the substrate, an optical filter structure on the top main surface region of the substrate, a waveguide on the main top surface region of the substrate, and a thermal radiation detector on the top main surface region of the substrate, wherein the thermal radiation detector provides a detector output signal based on a radiation strength of the filtered thermal radiation received from the waveguide.Type: GrantFiled: March 25, 2020Date of Patent: November 22, 2022Assignee: INFINEON TECHNOLOGIES AGInventors: Thomas Grille, Cristina Consani, Peter Irsigler, Bernhard Jakoby, Thomas Krotscheck Ostermann, Gerald Puehringer, Christian Ranacher, Andreas Tortschanoff
-
Publication number: 20200309686Abstract: A fluid sensor includes a substrate having a top main surface region, wherein the top main surface region of the substrate forms a common system plane of the fluid sensor, a thermal radiation emitter on the top main surface region of the substrate, an optical filter structure on the top main surface region of the substrate, a waveguide on the main top surface region of the substrate, and a thermal radiation detector on the top main surface region of the substrate, wherein the thermal radiation detector provides a detector output signal based on a radiation strength of the filtered thermal radiation received from the waveguide.Type: ApplicationFiled: March 25, 2020Publication date: October 1, 2020Inventors: Thomas Grille, Cristina Consani, Peter Irsigler, Bernhard Jakoby, Thomas Krotscheck Ostermann, Gerald Puehringer, Christian Ranacher, Andreas Tortschanoff
-
Patent number: 10535576Abstract: In one embodiment, a semiconductor device includes a first contact pad disposed at a top side of a workpiece, a second contact pad disposed at the top side of the workpiece. An isolation region is disposed between the first contact pad and the second contact pad. A metal strip is disposed at least partially within the isolation region. The metal strip is not coupled to an external potential node.Type: GrantFiled: September 12, 2017Date of Patent: January 14, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Thomas Krotscheck Ostermann, Andrew Christopher Graeme Wood, Peter Maier Brandl
-
Patent number: 10090215Abstract: A semiconductor die includes a semiconductor circuit disposed within or over a substrate. A conductive contact pad is disposed over the substrate outside the semiconductor circuit. A floating electrical path ends at a singulated edge of the die. The electrical path is electrically coupled to the conductive contact pad.Type: GrantFiled: January 11, 2017Date of Patent: October 2, 2018Assignee: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Andrew Christopher Graeme Wood, Gernot Fasching, Marius Aurel Bodea, Thomas Krotscheck Ostermann, Erwin Bacher
-
Publication number: 20180012819Abstract: In one embodiment, a semiconductor device includes a first contact pad disposed at a top side of a workpiece, a second contact pad disposed at the top side of the workpiece. An isolation region is disposed between the first contact pad and the second contact pad. A metal strip is disposed at least partially within the isolation region. The metal strip is not coupled to an external potential node.Type: ApplicationFiled: September 12, 2017Publication date: January 11, 2018Inventors: Thomas Krotscheck Ostermann, Andrew Christopher Graeme Wood, Peter Maier Brandl
-
Patent number: 9799583Abstract: In one embodiment, a semiconductor device includes a first contact pad disposed at a top side of a workpiece, a second contact pad disposed at the top side of the workpiece. An isolation region is disposed between the first contact pad and the second contact pad. A metal strip is disposed at least partially within the isolation region. The metal strip is not coupled to an external potential node.Type: GrantFiled: November 7, 2013Date of Patent: October 24, 2017Assignee: Infineon Technologies AGInventors: Thomas Krotscheck Ostermann, Andrew Christopher Graeme Wood, Peter Maier Brandl
-
Publication number: 20170125315Abstract: A semiconductor die includes a semiconductor circuit disposed within or over a substrate. A conductive contact pad is disposed over the substrate outside the semiconductor circuit. A floating electrical path ends at a singulated edge of the die. The electrical path is electrically coupled to the conductive contact pad.Type: ApplicationFiled: January 11, 2017Publication date: May 4, 2017Inventors: Andrew Christopher Graeme Wood, Gernot Fasching, Marius Aurel Bodea, Thomas Krotscheck Ostermann, Erwin Bacher
-
Patent number: 9618693Abstract: A sensor system having a multi-pass interaction region is disclosed. The system includes an input region, a multi-pass region, and an output region. The input region is configured to receive emitted light. The multi-pass region is coupled to the input region and is configured to absorb portions of the emitted light according to a specimen proximate the multi-pass region. The output region is coupled to the multi-pass region and is configured to provide interacted light from the multi-pass region.Type: GrantFiled: June 13, 2014Date of Patent: April 11, 2017Assignee: Infineon Technologies AGInventors: Ventsislav Lavchiev, Bernhard Jakoby, Ursula Hedenig, Thomas Grille, Peter Irsigler, Thomas Neidhart, Thomas Krotscheck Ostermann
-
Patent number: 9583406Abstract: A method for semiconductor fabrication includes forming a first array of semiconductor circuitry and a second array of semiconductor circuitry separated by a singulation region and a contact region. The method also includes forming a first array of process control monitoring structures within the singulation region of a substrate. The method also includes forming a first array of contact pads disposed in the contact region. The method also includes forming electrical connections between the first array of process control monitoring structures and the first array of contact pads, wherein all external electrical connections to the first array of process control monitoring structures are made through the first array of contact pads.Type: GrantFiled: March 17, 2015Date of Patent: February 28, 2017Assignee: Infineon Technologies Austria AGInventors: Andrew Christopher Graeme Wood, Gernot Fasching, Marius Aurel Bodea, Thomas Krotscheck Ostermann, Erwin Bacher
-
Publication number: 20160276233Abstract: A method for semiconductor fabrication includes forming a first array of semiconductor circuitry and a second array of semiconductor circuitry separated by a singulation region and a contact region. The method also includes forming a first array of process control monitoring structures within the singulation region of a substrate. The method also includes forming a first array of contact pads disposed in the contact region. The method also includes forming electrical connections between the first array of process control monitoring structures and the first array of contact pads, wherein all external electrical connections to the first array of process control monitoring structures are made through the first array of contact pads.Type: ApplicationFiled: March 17, 2015Publication date: September 22, 2016Inventors: Andrew Christopher Graeme Wood, Gernot Fasching, Marius Aurel Bodea, Thomas Krotscheck Ostermann, Erwin Bacher
-
Patent number: 9417186Abstract: Some embodiments of the present disclosure relate to an infrared (IR) opto-electronic sensor having a silicon waveguide implemented on a single silicon integrated chip. The IR sensor has a semiconductor substrate having a silicon waveguide extends along a length between a radiation input conduit and a radiation output conduit. The radiation input conduit couples radiation into the silicon waveguide, while the radiation output conduit couples radiation out from the silicon waveguide. The silicon waveguide conveys the IR radiation from the radiation input conduit to the radiation output conduit at a single mode. As the radiation is conveyed by the silicon waveguide, an evanescent field is formed that extends outward from the silicon waveguide to interact with a sample positioned between the radiation input conduit and the radiation output conduit.Type: GrantFiled: August 30, 2012Date of Patent: August 16, 2016Assignee: Infineon Technologies AGInventors: Bernhard Jakoby, Ventsislav Lachiev, Thomas Grille, Peter Irsigler, Ursula Hedenig, Sokratis Sgouridis, Thomas Krotscheck Ostermann
-
Publication number: 20150362672Abstract: A sensor system having a multi-pass interaction region is disclosed. The system includes an input region, a multi-pass region, and an output region. The input region is configured to receive emitted light. The multi-pass region is coupled to the input region and is configured to absorb portions of the emitted light according to a specimen proximate the multi-pass region. The output region is coupled to the multi-pass region and is configured to provide interacted light from the multi-pass region.Type: ApplicationFiled: June 13, 2014Publication date: December 17, 2015Inventors: Ventsislav Lavchiev, Bernhard Jakoby, Ursula Hedenig, Thomas Grille, Peter Irsigler, Thomas Neidhart, Thomas Krotscheck Ostermann
-
Publication number: 20150123131Abstract: In one embodiment, a semiconductor device includes a first contact pad disposed at a top side of a workpiece, a second contact pad disposed at the top side of the workpiece. An isolation region is disposed between the first contact pad and the second contact pad. A metal strip is disposed at least partially within the isolation region. The metal strip is not coupled to an external potential node.Type: ApplicationFiled: November 7, 2013Publication date: May 7, 2015Applicant: Infineon Technologies AGInventors: Thomas Krotscheck Ostermann, Andrew Christopher Graeme Wood, Peter Maier Brandl
-
Publication number: 20140061677Abstract: Some embodiments of the present disclosure relate to an infrared (IR) opto-electronic sensor having a silicon waveguide implemented on a single silicon integrated chip. The IR sensor has a semiconductor substrate having a silicon waveguide extends along a length between a radiation input conduit and a radiation output conduit. The radiation input conduit couples radiation into the silicon waveguide, while the radiation output conduit couples radiation out from the silicon waveguide. The silicon waveguide conveys the IR radiation from the radiation input conduit to the radiation output conduit at a single mode. As the radiation is conveyed by the silicon waveguide, an evanescent field is formed that extends outward from the silicon waveguide to interact with a sample positioned between the radiation input conduit and the radiation output conduit.Type: ApplicationFiled: August 30, 2012Publication date: March 6, 2014Applicant: Infineon Technologies AGInventors: Bernhard Jakoby, Ventsislav Lachiev, Thomas Grille, Peter Irsigler, Sokratis Sgouridis, Ursula Hedenig, Thomas Krotscheck Ostermann