Abstract: The method of the present invention provides in a simple manner, the deposition of boron nitride layers with microcrystalline cubic structure which are suitable as insulating layers in VLSI-circuits, as mask membranes in x-ray lithography, as well as coating hard substances. Due to the use of excited starting substances that already contain boron and nitrogen in one molecule and are preferably liquid or solid, and the use of a plasma-CVD-method, the method can be performed using in temperatures of below 500.degree. C. The excitation of the starting substance proceeds preferably in inductive or capacitative fashion in a hollow cathode.

Abstract: Described is the deposition of copper-containing layers on substrates by decomposition of organometallic copper compounds containing acetylacetonato or substituted acetylacetonato and isonitrile. The decomposition is preferably carried out in accordance with CVD method.

Abstract: The deposition of a copper-containing layer on a substrate by decomposing, particularly by a CVD process, a compound corresponding to the formula (I)RO--Cu--L (I)in whichR represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, andL represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane,is described, together with previously unknown compounds of formula (I) which may be used in the process.

Abstract: The present invention is directed to tungsten halogen phosphine complex compounds having the formula W(PX.sub.3).sub.6-n L.sub.n wherein X is fluorine or chlorine, L is molecular nitrogen, acetone or other ketones or aldehydes, carbon monoxide, acetonitrile or other nitriles, diphenylethine or other ethines, diethylether or tetrahydrofurane or other open-chained or cyclic ethers, benzene or other aromatics, ethene or 1,5-cyclooctodiene or cycloheptatriene or other mono, di, or, respectively, triolefines, whereby two single-tooth ligands L can be replaced by one .mu..sup.4 -ligand or three single-tooth ligands L can be replaced by one .mu..sup.6 -ligand and n is a whole number from 0 to 5, as well as methods for the manufacture thereof. These substances are easily volatile in a vacuum and can be decomposed at extremely low temperatures and are therefore extremely well suited for CVD depositions in semiconductor technology, particularly, as via hole fillers in VLSI circuits.