Abstract: A method of forming a single-ion conductive network comprising reaction of a first compound of formula (I) with a second compound and a third compound: formula (I). X is selected from the group consisting of B and Al. M+ is a cation, e.g. a lithium ion. The second compound comprises at least two hydroxyl groups, e.g. a diol. The third compound comprises only one hydroxyl group. The single-ion conductive network may be used in a metal battery or metal ion battery.

Abstract: A compound of formula (I): (Core)n-(X)m wherein Core is a core group; n is 0 and m is 1, or n is 1 and m is at least 1; and X is a group of formula (II): wherein: R1, R3 and R5 are each independently H or a substituent; R2 and R4 are each a substituent; one of R1-R5 is a direct bond or divalent linking group linking the group of formula (II) to Core in the case where n is 1; x and y are 0, 1, 2, 3 or 4; and the compound of formula (I) is substituted with at least one ionic substituent. The compound may be used as an n-dopant to dope an organic semiconductor.

Abstract: A separator for a battery formed from a polymer gel electrolyte that is disposed within the pores of a polymer mesh. The polymer gel electrolyte is formed from a crosslinked ion-conducting polymer and an ionic liquid. The separator is formed from a gel loaded with an electrolyte, which prevents issue with electrolyte leakage. The polymer mesh provides stability to the polymer gel electrolyte, allowing for use of thin films of the polymer gel electrolyte and use of soft polymer gel electrolytes.

Abstract: A charge-transfer salt formed from a material comprising a repeat unit of formula (I) and an n-dopant: wherein BG is a backbone group of the repeat unit; R1 is a ionic substituent comprising at least one cationic or anionic group; n is at least 1; R2 is a non-ionic substituent; and m is 0 or a positive integer; the material further comprising a counterion balancing the charge of the cationic or anionic group.

Abstract: A battery cell formed of anode made from an n-type polymer and a cathode made from a p-type polymer with an electrolyte between the anode and the cathode. The anode and cathode are formed by depositing a compound that contains a non-volatile electrolyte that creates pathways in the deposited anode and the cathode.

Abstract: A charge-transfer salt formed from a material comprising a repeat unit of formula (I) and an n-dopant: wherein BG is a backbone group of the repeat unit; R1 is a ionic substituent comprising at least one cationic or anionic group; n is at least 1; R2 is a non-ionic substituent; and m is 0 or a positive integer; the material further comprising a counterion balancing the charge of the cationic or anionic group.

Abstract: Provided herein are nanocrystal assemblies comprising quantum dots, a dopant (e.g., an organic compound dopant), and a ligand bridging the quantum dots. Also provided are methods of preparing the assemblies and devices comprising the assemblies (e.g., field effect transistors, thermoelectric generators).

Abstract: A compound of formula (I): (Core)n-(X)m wherein Core is a core group; n is 0 and m is 1, or n is 1 and m is at least 1; and X is a group of formula (II): wherein: R1, R3 and R5 are each independently H or a substituent; R2 and R4 are each a substituent; one of R1-R5 is a direct bond or divalent linking group linking the group of formula (II) to Core in the case where n is 1; x and y are 0, 1, 2, 3 or 4; and the compound of formula (I) is substituted with at least one ionic substituent. The compound may be used as an n-dopant to dope an organic semiconductor.

Abstract: A charge-transfer salt formed from a material comprising a repeat unit of formula (I) and an n-dopant: wherein BG is a backbone group of the repeat unit; R1 is a ionic substituent comprising at least one cationic or anionic group; n is at least 1; R2 is a non-ionic substituent; and m is 0 or a positive integer; the material further comprising a counterion balancing the charge of the cationic or anionic group.

Abstract: A separator for a battery formed from a polymer gel electrolyte that is disposed within the pores of a polymer mesh. The polymer gel electrolyte is formed from a crosslinked ion-conducting polymer and an ionic liquid. The separator is formed from a gel loaded with an electrolyte, which prevents issue with electrolyte leakage. The polymer mesh provides stability to the polymer gel electrolyte, allowing for use of thin films of the polymer gel electrolyte and use of soft polymer gel electrolytes.

Abstract: A method of forming an n-doped organic semiconductor, the method comprising: formation of an n-dopant reagent by reaction of a composition comprising two or more precursor units for forming the n-dopant reagent and an organic semiconductor; and n-doping the organic semiconductor. One or more of the precursor units may be a substituent of a polymeric repeat unit. The n-doped organic semiconductor may be an electron-injection layer of an organic light-emitting device.

Abstract: A composition comprising a first material substituted with at least one group of formula (I) and a second material substituted with at least one group selected from groups of formulae (IIa) and (IIb): wherein: Sp1 and Sp2 are spacer groups; NB independently in each occurrence is a norbornene group that may be unsubstituted or substituted with one or more substituents; n1 and n2 are 0 or 1; m1 is 1 if n1 is 0 and m1 is at least 1 if n1 is 1; m2 is 1 if n2 is 0 and m2 is at least 1 if n2 is 1; Ar1 represents an aryl or heteroaryl group; R1 independently in each occurrence is H or a substituent; and * represents a point of attachment to the first or second material. The composition may be used to form a layer of an organic electronic device, for example the hole-transporting layer of an organic light-emitting device.

Abstract: A material substituted with a group of formula (I): wherein: Ar1 is an aryl or heteroaryl group; Sp1 represents a first spacer group; n1 is 0 or 1; m1 is 1 if n1 is 0 and m1 is at least 1 if n1 is 1; R1 independently in each occurrence is H or a substituent, with the proviso that at least one R1 is a group R11 selected from: alkyl comprising a tertiary carbon atom directly bound to a carbon atom of the cyclobutene ring of formula (I); branched alkyl wherein a secondary or tertiary carbon atom of the branched alkyl is spaced from a carbon atom of the cyclobutene ring of formula (I) by at least one —CH2— group; and alkyl comprising a cyclic alkyl group; or with the proviso that at least two R1 groups are linked to form a ring.

Abstract: A method of forming an n-doped organic semiconductor, the method comprising: formation of an n-dopant reagent by reaction of a composition comprising two or more precursor units for forming the n-dopant reagent and an organic semiconductor; and n-doping the organic semiconductor. One or more of the precursor units may be a substituent of a polymeric repeat unit. The n-doped organic semiconductor may be an electron-injection layer of an organic light-emitting device.

Abstract: The invention relates to electrochemical wound dressings wherein potential damage to healthy cells and granulating tissue induced by hypochlorite and/or hypochlorous acid is reduced by enabling effective removal or build-up of substantial concentrations thereof through use of catalysts and/or scavenging/sacrificing agents. In another aspect, the present invention relates to the use of the latter materials in medical devices and articles.

Abstract: The invention relates to electrochemical wound dressings wherein potential damage to healthy cells and granulating tissue induced by hypochlorite and/or hypochlorous acid is reduced by enabling effective removal or build-up of substantial concentrations thereof through use of catalysts and/or scavenging/sacrificing agents. In another aspect, the present invention relates to the use of the latter materials in medical devices and articles.

Abstract: The present invention relates to a compound of general formula (I) which can transport holes in an organic optoelectronic device, and to blends and solutions comprising the compound of general formula (I): wherein X is C, Si or Ge; A is a group of formula (II) wherein Z is N, P, NH, O or S; E is C1-10 alkyl or H; W is substituted or unsubstituted C5-14 aryl or substituted or unsubstituted C6-16 alkyl; e is an integer from 1 to 4; and z is 1 or 2; B, C and D are each independently A, H, C1-C12 alkyl, C5-14 aryl or OH; and a, b, c and d are each independently an integer from 1 to 5.

Abstract: An organic light-emitting device comprising an anode (103); a cathode (109); a light-emitting layer (105) between the anode and the cathode; and an electron-transporting layer (107) comprising an electron-transporting material between the cathode and the light-emitting layer, wherein the cathode comprises a layer of a conducting material (109B) and a layer of an alkali metal compound (109A) between the electron-transporting layer and the layer of conducting material and wherein the electron-transporting material is a conjugated polymer comprising arylene repeat units.

Abstract: Charge Transfer Salt, Electronic Device and Method of Forming the Same A charge-transfer salt formed from a material comprising a unit of formula (I) and an n-dopant: wherein Ar1 is an arylene group; R1 is a substituent comprising at least one cyano group; n is at least 1; R2 is a substituent; and m is 0 or a positive integer. The material may be a polymer. The charge-transfer salt may be used as a layer of an organic electronic device.

Abstract: A method of forming a n-doped semiconductor layer wherein a film comprising an organic semiconductor and an n-dopant reagent is irradiated by light having a wavelength that is within an absorption range of the organic semiconductor, and wherein an absorption maximum wavelength of the n-dopant precursor is shorter than any peak wavelength of the light. The n-doped semiconductor layer may be an electron-injection layer of an organic light-emitting device.