Abstract: An apparatus comprises a chamber and two pumps coupled to opposing sides of the chamber. The chamber is configured to receive a medium and includes a first cryogenically cooled structure having a first surface and an opposing second surface and a second cryogenically cooled structure having a first surface and an opposing second surface. The first surface of the first cryogenically cooled structure faces the first surface of the second cryogenically cooled structure forming a gap. The gap is configured to receive the medium. The chamber also includes a gas inlet.

Abstract: A non-metallic media substrate includes a disc-shaped substrate body having at least one media storage surface on a face thereof. The substrate body has a center opening having an inner diameter and an outer diameter surface, and the substrate body has a thickness. The substrate further includes an annular groove at the outer diameter of the media substrate, the annular groove having chamfered edges and an internal concavity extending toward the inner diameter.

Abstract: A device includes a housing unit and a number of magnets. The housing unit includes a number of holes therein. The magnets are positioned in the holes. The magnets have a same pole orientation. It is appreciated that the magnets are positioned in the holes to form a mechanically balanced and magnetically unbalanced structure.

Abstract: A method includes moving a sensor and an article at a first speed to position the sensor into a reference position relative to an article fixture. The sensor and the article are moved at a second speed as the sensor approaches the reference position. It is determined when the sensor is in the reference position, wherein the sensor is configured to be in the reference position when a contact is established between the sensor and a surface of the article fixture. The article is moved by a predetermined increment relative to the reference position to position the article in a target position in response to determining that the sensor is in the reference position.

Abstract: A device includes a housing unit and a number of magnets. The housing unit includes a number of holes therein. The magnets are positioned in the holes. The magnets have a same pole orientation. It is appreciated that the magnets are positioned in the holes to form a mechanically balanced and magnetically unbalanced structure.

Abstract: A plasma etching source installable into at least one of multiple compartments of a sputter deposition tool. The plasma etching source includes a first mounting plate and at least one electrode plate coupled to the first mounting plate. A gas inlet is included in the first mounting plate of the plasma etching source.

Abstract: The embodiments disclose an apparatus including at least two carbon source deposition tools for emitting electrons, at least two reflective polarity rear button permanent magnets integrated into the carbon source deposition tools for reflecting emitted electrons, and at least two paired polarity Helmholtz coils integrated into the carbon source deposition tools for forming uniform parallel magnetic field lines for confining the emitted electrons to uniformly deposit carbon onto the surfaces of a two-sided media disk.

Abstract: A chemical vapor deposition source that includes at least one plate to which first and second electrical connection posts are coupled. The chemical vapor deposition source also includes a filament having a first end and a second end. The first end of the filament is electrically connected to the first electrical connection post and the second end of the filament is electrically connected to the second electrical connection post. The chemical vapor deposition source further includes at least one filament holder electrically insulated from the at least one plate. The at least one filament holder holds a portion of the filament between the first end and the second end.

Abstract: A sputtering apparatus includes a sputtering cathode and a target overlying the sputtering cathode. A shield overlies the target and forms an aperture configured to direct sputtering particles onto a substrate. The shield includes a lower shield portion overlying the target, a channel outlet overlying the lower shield portion, and an upper shield portion overlying the channel. In some embodiments the shield includes a first shield and a second shield. The first shield includes a front gas injection outlet. The second shield overlies the first shield and forms the aperture. In various embodiments, the second shield is operable to adjust plasma confinement between the first shield and the second shield.

Abstract: A method includes moving a sensor and an article at a first speed to position the sensor into a reference position relative to an article fixture. The sensor and the article are moved at a second speed as the sensor approaches the reference position. It is determined when the sensor is in the reference position, wherein the sensor is configured to be in the reference position when a contact is established between the sensor and a surface of the article fixture. The article is moved by a predetermined increment relative to the reference position to position the article in a target position in response to determining that the sensor is in the reference position.

Abstract: Provided herein is an apparatus including a loader configured to position a workpiece in a holding fixture. In some embodiments, the holding fixture includes an opening configured to removably receive the workpiece therein and hold the workpiece in a target position within the opening. The apparatus also includes position detecting means configured to translate a sensor to a predetermined location relative to the holding fixture and further configured to translate the workpiece by a predetermined increment relative to the predetermined location to position the workpiece in the target position.

Abstract: A plasma etching source installable into at least one of multiple compartments of a sputter deposition tool. The plasma etching source includes a first mounting plate and at least one electrode plate coupled to the first mounting plate. A gas inlet is included in the first mounting plate of the plasma etching source.

Abstract: A chemical vapor deposition source that includes at least one plate to which first and second electrical connection posts are coupled. The chemical vapor deposition source also includes a filament having a first end and a second end. The first end of the filament is electrically connected to the first electrical connection post and the second end of the filament is electrically connected to the second electrical connection post. The chemical vapor deposition source further includes at least one filament holder electrically insulated from the at least one plate. The at least one filament holder holds a portion of the filament between the first end and the second end.

Abstract: The embodiments disclose an apparatus including at least two carbon source deposition tools for emitting electrons, at least two reflective polarity rear button permanent magnets integrated into the carbon source deposition tools for reflecting emitted electrons, and at least two paired polarity Helmholtz coils integrated into the carbon source deposition tools for forming uniform parallel magnetic field lines for confining the emitted electrons to uniformly deposit carbon onto the surfaces of a two-sided media disk.

Abstract: Provided herein is an apparatus including a loader configured to position a workpiece in a holding fixture. In some embodiments, the holding fixture includes an opening configured to removably receive the workpiece therein and hold the workpiece in a target position within the opening. The apparatus also includes position detecting means configured to translate a sensor to a predetermined location relative to the holding fixture and further configured to translate the workpiece by a predetermined increment relative to the predetermined location to position the workpiece in the target position.

Abstract: Resist imprinting void reduction method may include sealing a chamber. The chamber may be filled with an ambient inert gas, wherein the inert gas a solubility in a resist layer on a substrate greater than Helium. The method may also include establishing a pressure within the chamber sufficient to cause absorption of the ambient inert gas by the resist layer, and sufficient to suppress evaporation of the resist layer.

Abstract: A system and method for in-situ introduction of gas into a vacuum deposition chamber having a target with a length/width form factor ratio greater than 1 includes a plurality of manifolds arranged around the target to deliver a gas to the vacuum chamber. A gas supply is coupled to the manifolds, and a mass flow controller couples each manifold to the gas supply. Each manifold includes a plurality of orifices for introducing gas into the vacuum chamber from the manifold. The method includes arranging a plurality of manifolds around the target, providing a gas supply to the manifolds, controlling a flow rate of the gas with a mass flow controller between each manifold and the gas supply, introducing the gas into the vacuum chamber through orifices in the manifolds, and locating the manifolds and orifices on each manifold to introduce the gas in a controlled arranged manner about the target.

Abstract: Disclosed is an apparatus and process within a pass-by sputtering chamber, in which standard cathodes and two or more specially-sized cathodes within the sputtering chamber, mounted colinear with the direction of travel of substrates within the sputtering chamber, enabling performance of rapid adjustment of material deposited on a substrate.

Abstract: An apparatus for making a magnetic recording medium, including a quartz lamp within a sputtering chamber to heat the medium between the application of layers and without disruption to the vacuum integrity of the sputtering system. A process using the apparatus for manufacturing the magnetic recording medium is also claimed.

Abstract: A system and method for sputtering having a substrate holder, the target-cathode and the shield that are all electrically isolated from each other and are all capable of independently being subjected to different voltages. The substrate holder can be a pallet that holds a plurality of substrates. The system further includes a plurality of target-cathodes and shields disposed along the path of travel of the moving substrate holder, and a controller configured to selectively vary the target-cathode voltage, the shield voltage, and the pallet bias voltage while the pallet moves along the path of travel. The target-cathodes and shields are spaced apart along the path of travel by a distance less than a length of the pallet and on both sides of the path of travel. The controller can include a timing circuit for synchronizing changes in the target-cathode voltages with changes in the pallet bias voltage and shield voltage.