Patents by Inventor Thomas Leese

Thomas Leese has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of atomic layer deposition using titanium-based precursors
    Patent number: 8221852
    Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
    Type: Grant
    Filed: September 10, 2008
    Date of Patent: July 17, 2012
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra
  • Methods of atomic layer deposition using hafnium and zirconium-based precursors
    Patent number: 8039062
    Abstract: Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II: wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula III: wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
    Type: Grant
    Filed: September 10, 2008
    Date of Patent: October 18, 2011
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra
  • METHODS OF ATOMIC LAYER DEPOSITION USING HAFNIUM AND ZIRCONIUM-BASED PRECURSORS
    Publication number: 20090081385
    Abstract: Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II: wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula III: wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
    Type: Application
    Filed: September 10, 2008
    Publication date: March 26, 2009
    Inventors: Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra
  • METHODS OF ATOMIC LAYER DEPOSITION USING TITANIUM-BASED PRECURSORS
    Publication number: 20090074983
    Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
    Type: Application
    Filed: September 10, 2008
    Publication date: March 19, 2009
    Inventors: Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra
  • Methods of atomic layer deposition using titanium-based precursors
    Patent number: RE45124
    Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: September 9, 2014
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra