Abstract: A roll exchange chamber for exchanging a substrate roll is described. The roll exchange chamber includes a rotatable base construction being rotatable around a central axis. The base construction comprises a first roll holder for holding a first substrate roll, a second roll holder for holding a second substrate roll, and a wall for providing a first compartment and a second compartment in the roll exchange chamber. The wall is arranged between the first roll holder and the second roll holder. Further, a roll-to-roll processing system with a roll exchange chamber as well as a method of continuously providing a flexible substrate in a roll-to-roll processing system are described.

Abstract: A apparatus for vacuum sputter deposition is described. The apparatus includes, a vacuum chamber; three or more sputter cathodes within the vacuum chamber for sputtering material on a substrate; a gas distribution system for providing a processing gas including H2 to the vacuum chamber; a vacuum system for providing a vacuum inside the vacuum chamber; and a safety arrangement for reducing the risk of an oxy-hydrogen explosion, wherein the safety arrangement comprises a dilution gas feeding unit connected to the vacuum system for dilution of the H2-content of the processing gas.

Abstract: A lock chamber for a substrate processing system is provided which includes at least a first conduit adapted to provide an inner portion of the lock chamber in fluid communication with atmospheric pressure or overpressure. Additionally, the lock chamber includes at least a first control valve for controlling a flow rate of the fluid communication of the inner portion of the chamber with the atmospheric pressure or the overpressure, wherein the control valve is adapted to continuously control the flow rate. Furthermore, an according method, a computer program and a computer readable medium adapted for performing the method is provided.

Abstract: A lock chamber for a substrate processing system is provided which includes at least a first conduit adapted to provide an inner portion of the lock chamber in fluid communication with atmospheric pressure or overpressure. Additionally, the lock chamber includes at least a first control valve for controlling a flow rate of the fluid communication of the inner portion of the chamber with the atmospheric pressure or the overpressure, wherein the control valve is adapted to continuously control the flow rate. Furthermore, an according method, a computer program and a computer readable medium adapted for performing the method is provided.

Abstract: A system for measuring the thickness of substrates in a vacuum chamber is provided. The system includes a sender adapted to emit electromagnetic radiation and a receiver including a multi-zone sensor for detecting the electromagnetic radiation. The multi-zone sensor includes a first detection zone for measuring the thickness of the substrates and a second detection zone adapted to generate a signal indicative of an alignment between the sender and the receiver. The system further includes an adjustment system adapted to automatically adjust the sender and the receiver with respect to each other based on the signal. Further, a method for adjustment of a sender and a receiver relative to each other is provided.

Abstract: A gas supply system 20 for supplying a gas into a pumping system 10 is provided, the pumping system including a plurality of pumping means 14, 16, the gas supply system comprising a gas inlet 22 and plurality of gas conduits 24, 25 fluidly connected to the gas inlet and each having a gas outlet 27, 28 fluidly connectable to the pumping system 10, wherein the gas outlets of the plurality of gas conduits are in parallel fluidly connectable to the pumping system and each gas conduit is provided with a gradient adjustment means adapted to provide at least one gradient of gas amount supplied to the pumping system.

Abstract: A method for coating substrates in inline installations, in which a substrate is moved through at least one coating chamber and during this movement is coated. In this method, first, a model of the coating chamber is formed which takes into consideration the changes of the chamber parameters caused by the movement of the substrate through the coating chamber. Subsequently, the particular position of the substrate within the coating chamber is acquired. The chamber parameters are subsequently set based on the position of the substrate according to the model of the coating chambers.